JPS5421165A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5421165A
JPS5421165A JP8652477A JP8652477A JPS5421165A JP S5421165 A JPS5421165 A JP S5421165A JP 8652477 A JP8652477 A JP 8652477A JP 8652477 A JP8652477 A JP 8652477A JP S5421165 A JPS5421165 A JP S5421165A
Authority
JP
Japan
Prior art keywords
semiconductor device
wiring
provding
bump
absorb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8652477A
Other languages
English (en)
Other versions
JPS6149819B2 (ja
Inventor
Masaharu Yorikane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8652477A priority Critical patent/JPS5421165A/ja
Priority to US05/925,324 priority patent/US4263606A/en
Publication of JPS5421165A publication Critical patent/JPS5421165A/ja
Publication of JPS6149819B2 publication Critical patent/JPS6149819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
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    • H01L2224/05117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124Aluminium [Al] as principal constituent
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    • H01L2224/13007Bump connector smaller than the underlying bonding area, e.g. than the under bump metallisation [UBM]
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
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JP8652477A 1977-07-18 1977-07-18 Semiconductor device Granted JPS5421165A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8652477A JPS5421165A (en) 1977-07-18 1977-07-18 Semiconductor device
US05/925,324 US4263606A (en) 1977-07-18 1978-07-17 Low stress semiconductor device lead connection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8652477A JPS5421165A (en) 1977-07-18 1977-07-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5421165A true JPS5421165A (en) 1979-02-17
JPS6149819B2 JPS6149819B2 (ja) 1986-10-31

Family

ID=13889366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8652477A Granted JPS5421165A (en) 1977-07-18 1977-07-18 Semiconductor device

Country Status (2)

Country Link
US (1) US4263606A (ja)
JP (1) JPS5421165A (ja)

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US5628852A (en) * 1991-07-26 1997-05-13 Nec Corporation Method for manufacturing a polyimide multilayer wiring substrate

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US5552639A (en) * 1980-09-01 1996-09-03 Hitachi, Ltd. Resin molded type semiconductor device having a conductor film
JPS5745259A (en) * 1980-09-01 1982-03-15 Hitachi Ltd Resin sealing type semiconductor device
US4514751A (en) * 1982-12-23 1985-04-30 International Business Machines Corporation Compressively stresses titanium metallurgy for contacting passivated semiconductor devices
DE3343367A1 (de) * 1983-11-30 1985-06-05 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit hoeckerartigen, metallischen anschlusskontakten und mehrlagenverdrahtung
JPS6178151A (ja) * 1984-09-25 1986-04-21 Nec Corp 半導体装置
US5134460A (en) * 1986-08-11 1992-07-28 International Business Machines Corporation Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding
JPS6373660A (ja) * 1986-09-17 1988-04-04 Fujitsu Ltd 半導体装置
US5132775A (en) * 1987-12-11 1992-07-21 Texas Instruments Incorporated Methods for and products having self-aligned conductive pillars on interconnects
US5243363A (en) * 1988-07-22 1993-09-07 Canon Kabushiki Kaisha Ink-jet recording head having bump-shaped electrode and protective layer providing structural support
US5038996A (en) * 1988-10-12 1991-08-13 International Business Machines Corporation Bonding of metallic surfaces
US5182420A (en) * 1989-04-25 1993-01-26 Cray Research, Inc. Method of fabricating metallized chip carriers from wafer-shaped substrates
US5242569A (en) * 1989-08-25 1993-09-07 International Business Machines Corporation Thermocompression bonding in integrated circuit packaging
US5148261A (en) * 1989-08-25 1992-09-15 International Business Machines Corporation Thermocompression bonding in integrated circuit packaging
US5120418A (en) * 1989-08-25 1992-06-09 International Business Machines Corporation Lead frame plating apparatus for thermocompression bonding
US5135155A (en) * 1989-08-25 1992-08-04 International Business Machines Corporation Thermocompression bonding in integrated circuit packaging
US5006917A (en) * 1989-08-25 1991-04-09 International Business Machines Corporation Thermocompression bonding in integrated circuit packaging
US5150197A (en) * 1989-10-05 1992-09-22 Digital Equipment Corporation Die attach structure and method
US5184206A (en) * 1990-10-26 1993-02-02 General Electric Company Direct thermocompression bonding for thin electronic power chips
US5206186A (en) * 1990-10-26 1993-04-27 General Electric Company Method for forming semiconductor electrical contacts using metal foil and thermocompression bonding
US5196377A (en) * 1990-12-20 1993-03-23 Cray Research, Inc. Method of fabricating silicon-based carriers
US5059553A (en) * 1991-01-14 1991-10-22 Ibm Corporation Metal bump for a thermal compression bond and method for making same
US5053851A (en) * 1991-01-14 1991-10-01 International Business Machines Corp. Metal bump for a thermal compression bond and method for making same
DE69216658T2 (de) * 1991-02-25 1997-08-07 Canon Kk Vorrichtung und Verfahren zur Verbindung elektrischer Bauelemente
US5283948A (en) * 1991-05-31 1994-02-08 Cray Research, Inc. Method of manufacturing interconnect bumps
US5223851A (en) * 1991-06-05 1993-06-29 Trovan Limited Apparatus for facilitating interconnection of antenna lead wires to an integrated circuit and encapsulating the assembly to form an improved miniature transponder device
CA2075462C (en) * 1992-01-27 1999-05-04 George Erdos Bump structure and method for bonding to a semi-conductor device
US5508561A (en) * 1993-11-15 1996-04-16 Nec Corporation Apparatus for forming a double-bump structure used for flip-chip mounting
JP3353508B2 (ja) * 1994-12-20 2002-12-03 ソニー株式会社 プリント配線板とこれを用いた電子装置
US5973931A (en) * 1996-03-29 1999-10-26 Sony Corporation Printed wiring board and electronic device using same
US5929521A (en) 1997-03-26 1999-07-27 Micron Technology, Inc. Projected contact structure for bumped semiconductor device and resulting articles and assemblies
JP3149846B2 (ja) * 1998-04-17 2001-03-26 日本電気株式会社 半導体装置及びその製造方法
US6090643A (en) 1998-08-17 2000-07-18 Teccor Electronics, L.P. Semiconductor chip-substrate attachment structure
JP4121665B2 (ja) * 1999-04-19 2008-07-23 株式会社ルネサステクノロジ 半導体基板の接合方法
JP3494940B2 (ja) * 1999-12-20 2004-02-09 シャープ株式会社 テープキャリア型半導体装置、その製造方法及びそれを用いた液晶モジュール
JP2003110016A (ja) * 2001-09-28 2003-04-11 Kobe Steel Ltd 半導体基板上への空中金属配線の形成方法
JP3731053B2 (ja) * 2002-12-18 2006-01-05 独立行政法人 宇宙航空研究開発機構 導電性融液中の拡散係数計測方法及び導電性融液中の拡散係数計測装置
US6784089B2 (en) * 2003-01-13 2004-08-31 Aptos Corporation Flat-top bumping structure and preparation method
US7109583B2 (en) * 2004-05-06 2006-09-19 Endwave Corporation Mounting with auxiliary bumps
JP2006032864A (ja) * 2004-07-21 2006-02-02 Sony Corp 多層配線構造と多層配線構造を有する半導体装置とこれらの製造方法
US8604624B2 (en) * 2008-03-19 2013-12-10 Stats Chippac Ltd. Flip chip interconnection system having solder position control mechanism
DE102009010816B4 (de) * 2009-02-27 2011-03-10 Solarworld Innovations Gmbh Verfahren zur Herstellung eines Halbleiter-Bauelements

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US4005455A (en) * 1974-08-21 1977-01-25 Intel Corporation Corrosive resistant semiconductor interconnect pad
JPS51147253A (en) * 1975-06-13 1976-12-17 Nec Corp Structure of electrode terminal
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ
US4045594A (en) * 1975-12-31 1977-08-30 Ibm Corporation Planar insulation of conductive patterns by chemical vapor deposition and sputtering

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5628852A (en) * 1991-07-26 1997-05-13 Nec Corporation Method for manufacturing a polyimide multilayer wiring substrate
US5686702A (en) * 1991-07-26 1997-11-11 Nippon Electric Co Polyimide multilayer wiring substrate

Also Published As

Publication number Publication date
US4263606A (en) 1981-04-21
JPS6149819B2 (ja) 1986-10-31

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