JPS5419372A - Production of semiconductor memory - Google Patents

Production of semiconductor memory

Info

Publication number
JPS5419372A
JPS5419372A JP8483377A JP8483377A JPS5419372A JP S5419372 A JPS5419372 A JP S5419372A JP 8483377 A JP8483377 A JP 8483377A JP 8483377 A JP8483377 A JP 8483377A JP S5419372 A JPS5419372 A JP S5419372A
Authority
JP
Japan
Prior art keywords
production
semiconductor memory
drain
alignment
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8483377A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6255710B2 (enrdf_load_stackoverflow
Inventor
Masanori Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8483377A priority Critical patent/JPS5419372A/ja
Publication of JPS5419372A publication Critical patent/JPS5419372A/ja
Publication of JPS6255710B2 publication Critical patent/JPS6255710B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
JP8483377A 1977-07-14 1977-07-14 Production of semiconductor memory Granted JPS5419372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8483377A JPS5419372A (en) 1977-07-14 1977-07-14 Production of semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8483377A JPS5419372A (en) 1977-07-14 1977-07-14 Production of semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5419372A true JPS5419372A (en) 1979-02-14
JPS6255710B2 JPS6255710B2 (enrdf_load_stackoverflow) 1987-11-20

Family

ID=13841771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8483377A Granted JPS5419372A (en) 1977-07-14 1977-07-14 Production of semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5419372A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5664469A (en) * 1979-09-04 1981-06-01 Texas Instruments Inc Programmable nonnvolatile floating gate type semiconductor memory device and method of manufacturing same
JPS56104473A (en) * 1980-01-25 1981-08-20 Hitachi Ltd Semiconductor memory device and manufacture thereof
JPS57130475A (en) * 1981-02-06 1982-08-12 Mitsubishi Electric Corp Semiconductor memory storage and its manufacture
JPS60134477A (ja) * 1983-12-23 1985-07-17 Toshiba Corp 不揮発性記憶装置及びその製造方法
JPH04211178A (ja) * 1990-03-13 1992-08-03 Toshiba Corp 半導体装置の製造方法
JPH05136427A (ja) * 1991-05-15 1993-06-01 Philips Gloeilampenfab:Nv プログラム可能トランジスタ及びその製造方法
JPH07161853A (ja) * 1993-12-01 1995-06-23 Nec Corp 不揮発性半導体記憶装置、その消去法及び製造方法
JP2006507682A (ja) * 2002-11-26 2006-03-02 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 横方向ドープチャネルの製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000056506A1 (fr) * 1999-03-24 2000-09-28 Sony Corporation Robot

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5159281A (en) * 1974-11-20 1976-05-24 Mitsubishi Electric Corp Handotaisochino seizoho
JPS5259585A (en) * 1975-10-29 1977-05-17 Intel Corp Method of producing mos polycrystalline ic
JPS52146569A (en) * 1976-05-31 1977-12-06 Toshiba Corp Semiconductor memory device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5159281A (en) * 1974-11-20 1976-05-24 Mitsubishi Electric Corp Handotaisochino seizoho
JPS5259585A (en) * 1975-10-29 1977-05-17 Intel Corp Method of producing mos polycrystalline ic
JPS52146569A (en) * 1976-05-31 1977-12-06 Toshiba Corp Semiconductor memory device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5664469A (en) * 1979-09-04 1981-06-01 Texas Instruments Inc Programmable nonnvolatile floating gate type semiconductor memory device and method of manufacturing same
JPS56104473A (en) * 1980-01-25 1981-08-20 Hitachi Ltd Semiconductor memory device and manufacture thereof
JPS57130475A (en) * 1981-02-06 1982-08-12 Mitsubishi Electric Corp Semiconductor memory storage and its manufacture
JPS60134477A (ja) * 1983-12-23 1985-07-17 Toshiba Corp 不揮発性記憶装置及びその製造方法
JPH04211178A (ja) * 1990-03-13 1992-08-03 Toshiba Corp 半導体装置の製造方法
JPH05136427A (ja) * 1991-05-15 1993-06-01 Philips Gloeilampenfab:Nv プログラム可能トランジスタ及びその製造方法
JPH07161853A (ja) * 1993-12-01 1995-06-23 Nec Corp 不揮発性半導体記憶装置、その消去法及び製造方法
JP2006507682A (ja) * 2002-11-26 2006-03-02 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 横方向ドープチャネルの製造方法

Also Published As

Publication number Publication date
JPS6255710B2 (enrdf_load_stackoverflow) 1987-11-20

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