JPS6255710B2 - - Google Patents

Info

Publication number
JPS6255710B2
JPS6255710B2 JP52084833A JP8483377A JPS6255710B2 JP S6255710 B2 JPS6255710 B2 JP S6255710B2 JP 52084833 A JP52084833 A JP 52084833A JP 8483377 A JP8483377 A JP 8483377A JP S6255710 B2 JPS6255710 B2 JP S6255710B2
Authority
JP
Japan
Prior art keywords
pattern
gate electrode
self
film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52084833A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5419372A (en
Inventor
Masanori Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP8483377A priority Critical patent/JPS5419372A/ja
Publication of JPS5419372A publication Critical patent/JPS5419372A/ja
Publication of JPS6255710B2 publication Critical patent/JPS6255710B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
JP8483377A 1977-07-14 1977-07-14 Production of semiconductor memory Granted JPS5419372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8483377A JPS5419372A (en) 1977-07-14 1977-07-14 Production of semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8483377A JPS5419372A (en) 1977-07-14 1977-07-14 Production of semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5419372A JPS5419372A (en) 1979-02-14
JPS6255710B2 true JPS6255710B2 (enrdf_load_stackoverflow) 1987-11-20

Family

ID=13841771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8483377A Granted JPS5419372A (en) 1977-07-14 1977-07-14 Production of semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5419372A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1126647C (zh) * 1999-03-24 2003-11-05 索尼公司 机器人装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4376947A (en) * 1979-09-04 1983-03-15 Texas Instruments Incorporated Electrically programmable floating gate semiconductor memory device
JPS56104473A (en) * 1980-01-25 1981-08-20 Hitachi Ltd Semiconductor memory device and manufacture thereof
JPS57130475A (en) * 1981-02-06 1982-08-12 Mitsubishi Electric Corp Semiconductor memory storage and its manufacture
JPS60134477A (ja) * 1983-12-23 1985-07-17 Toshiba Corp 不揮発性記憶装置及びその製造方法
JP2558961B2 (ja) * 1990-03-13 1996-11-27 株式会社東芝 半導体装置の製造方法
US5424567A (en) * 1991-05-15 1995-06-13 North American Philips Corporation Protected programmable transistor with reduced parasitic capacitances and method of fabrication
JP2848223B2 (ja) * 1993-12-01 1999-01-20 日本電気株式会社 不揮発性半導体記憶装置の消去方法及び製造方法
US7049188B2 (en) * 2002-11-26 2006-05-23 Advanced Micro Devices, Inc. Lateral doped channel

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5159281A (en) * 1974-11-20 1976-05-24 Mitsubishi Electric Corp Handotaisochino seizoho
GB1540450A (en) * 1975-10-29 1979-02-14 Intel Corp Self-aligning double polycrystalline silicon etching process
JPS52146569A (en) * 1976-05-31 1977-12-06 Toshiba Corp Semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1126647C (zh) * 1999-03-24 2003-11-05 索尼公司 机器人装置

Also Published As

Publication number Publication date
JPS5419372A (en) 1979-02-14

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