JPH0147905B2 - - Google Patents

Info

Publication number
JPH0147905B2
JPH0147905B2 JP55006866A JP686680A JPH0147905B2 JP H0147905 B2 JPH0147905 B2 JP H0147905B2 JP 55006866 A JP55006866 A JP 55006866A JP 686680 A JP686680 A JP 686680A JP H0147905 B2 JPH0147905 B2 JP H0147905B2
Authority
JP
Japan
Prior art keywords
gate
region
drain
buried layer
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55006866A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56104473A (en
Inventor
Kazuhiro Komori
Yasunobu Osa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP686680A priority Critical patent/JPS56104473A/ja
Publication of JPS56104473A publication Critical patent/JPS56104473A/ja
Publication of JPH0147905B2 publication Critical patent/JPH0147905B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/68Floating-gate IGFETs
    • H10D30/681Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP686680A 1980-01-25 1980-01-25 Semiconductor memory device and manufacture thereof Granted JPS56104473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP686680A JPS56104473A (en) 1980-01-25 1980-01-25 Semiconductor memory device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP686680A JPS56104473A (en) 1980-01-25 1980-01-25 Semiconductor memory device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS56104473A JPS56104473A (en) 1981-08-20
JPH0147905B2 true JPH0147905B2 (enrdf_load_stackoverflow) 1989-10-17

Family

ID=11650154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP686680A Granted JPS56104473A (en) 1980-01-25 1980-01-25 Semiconductor memory device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56104473A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59126674A (ja) * 1983-01-10 1984-07-21 Toshiba Corp 情報記憶用半導体装置
JPH0722194B2 (ja) * 1984-07-24 1995-03-08 工業技術院長 不揮発性メモリ
KR100238199B1 (ko) * 1996-07-30 2000-01-15 윤종용 플레쉬 이이피롬(eeprom) 장치 및 그 제조방법
KR100542947B1 (ko) * 1998-10-27 2006-03-28 주식회사 하이닉스반도체 플래쉬 메모리 셀

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419372A (en) * 1977-07-14 1979-02-14 Nec Corp Production of semiconductor memory

Also Published As

Publication number Publication date
JPS56104473A (en) 1981-08-20

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