JPS5434685A - Manufacture of nonvolatile semiconductor memory - Google Patents

Manufacture of nonvolatile semiconductor memory

Info

Publication number
JPS5434685A
JPS5434685A JP10072277A JP10072277A JPS5434685A JP S5434685 A JPS5434685 A JP S5434685A JP 10072277 A JP10072277 A JP 10072277A JP 10072277 A JP10072277 A JP 10072277A JP S5434685 A JPS5434685 A JP S5434685A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor memory
nonvolatile semiconductor
gate electrode
miniature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10072277A
Other languages
Japanese (ja)
Inventor
Makoto Omura
Nozomi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10072277A priority Critical patent/JPS5434685A/en
Publication of JPS5434685A publication Critical patent/JPS5434685A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a miniature and highly integral nonvolatile memory by securing a self-matching between the floating gate electrode and the external gate electrode.
JP10072277A 1977-08-23 1977-08-23 Manufacture of nonvolatile semiconductor memory Pending JPS5434685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10072277A JPS5434685A (en) 1977-08-23 1977-08-23 Manufacture of nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10072277A JPS5434685A (en) 1977-08-23 1977-08-23 Manufacture of nonvolatile semiconductor memory

Publications (1)

Publication Number Publication Date
JPS5434685A true JPS5434685A (en) 1979-03-14

Family

ID=14281513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10072277A Pending JPS5434685A (en) 1977-08-23 1977-08-23 Manufacture of nonvolatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5434685A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788775A (en) * 1980-11-21 1982-06-02 Nec Corp Manufacture of non volatile semiconductor memory unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788775A (en) * 1980-11-21 1982-06-02 Nec Corp Manufacture of non volatile semiconductor memory unit

Similar Documents

Publication Publication Date Title
NL7602970A (en) BAND SHAPED ELECTRODE.
JPS5283074A (en) Semiconductor memory
GB1551189A (en) Pendulum gate valve
GB1519720A (en) Pendulum gate valve
JPS52106280A (en) Semiconductor transistor memory cell
JPS526089A (en) Semiconductor memory
SE7607536L (en) POWER TURN VALVE
JPS5252337A (en) Semiconductor memory cell
JPS5226179A (en) Semi-conductor unit
JPS5419372A (en) Production of semiconductor memory
JPS5434685A (en) Manufacture of nonvolatile semiconductor memory
GB2037076B (en) Nonvolatile semiconductor memory
DK222376A (en) DRAIN VALVE
JPS5275987A (en) Gate protecting device
JPS52146569A (en) Semiconductor memory device
GB2017407B (en) Semiconductor structure of the avalanche type comprising a third electrode
JPS52119085A (en) Semiconductor memory element
BE858630A (en) SPONGIOUS IRON PRODUCTION
JPS51142932A (en) Semiconductor memory devices
JPS5422785A (en) Mis-type semiconductor memory device and its manufacture
JPS5468798A (en) Manufacture of lead carbonate
JPS51134074A (en) Method to manufacture the semiconductor unit
JPS52155074A (en) Semiconductor memory
JPS5440531A (en) Mis semiconductor memory circuit
IT1062839B (en) SCREW-IN VALVE