JPS54146966A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS54146966A JPS54146966A JP5577278A JP5577278A JPS54146966A JP S54146966 A JPS54146966 A JP S54146966A JP 5577278 A JP5577278 A JP 5577278A JP 5577278 A JP5577278 A JP 5577278A JP S54146966 A JPS54146966 A JP S54146966A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photo resistor
- plasma processing
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000000415 inactivating effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5577278A JPS54146966A (en) | 1978-05-10 | 1978-05-10 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5577278A JPS54146966A (en) | 1978-05-10 | 1978-05-10 | Pattern forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54146966A true JPS54146966A (en) | 1979-11-16 |
| JPS6213813B2 JPS6213813B2 (forum.php) | 1987-03-28 |
Family
ID=13008156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5577278A Granted JPS54146966A (en) | 1978-05-10 | 1978-05-10 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54146966A (forum.php) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56111226A (en) * | 1980-02-07 | 1981-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Formation of fine pattern |
| JPS5842231A (ja) * | 1981-09-08 | 1983-03-11 | Fujitsu Ltd | パターン形成方法 |
| JPS58100428A (ja) * | 1981-12-10 | 1983-06-15 | Matsushita Electronics Corp | パタ−ン形成方法 |
| JPS61214435A (ja) * | 1985-03-19 | 1986-09-24 | Rohm Co Ltd | 半導体のホトリソグラフィー方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03108619U (forum.php) * | 1990-02-23 | 1991-11-08 |
-
1978
- 1978-05-10 JP JP5577278A patent/JPS54146966A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56111226A (en) * | 1980-02-07 | 1981-09-02 | Nippon Telegr & Teleph Corp <Ntt> | Formation of fine pattern |
| JPS5842231A (ja) * | 1981-09-08 | 1983-03-11 | Fujitsu Ltd | パターン形成方法 |
| JPS58100428A (ja) * | 1981-12-10 | 1983-06-15 | Matsushita Electronics Corp | パタ−ン形成方法 |
| JPS61214435A (ja) * | 1985-03-19 | 1986-09-24 | Rohm Co Ltd | 半導体のホトリソグラフィー方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6213813B2 (forum.php) | 1987-03-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4738916A (en) | Intermediate layer material of three-layer resist system | |
| JPS596540A (ja) | 半導体装置の製造方法 | |
| JPS54146966A (en) | Pattern forming method | |
| US3986876A (en) | Method for making a mask having a sloped relief | |
| JPS57130431A (en) | Manufacture of semiconductor device | |
| JPS5591130A (en) | Production of semiconductor device | |
| JP3113040B2 (ja) | 半導体装置の製造方法 | |
| JPS5515149A (en) | Forming method of resist for microfabrication | |
| JPH0422123A (ja) | シリコン酸化膜のエッチング方法 | |
| JPH05109673A (ja) | 半導体装置の製造方法 | |
| JPS5511167A (en) | Dry etching method | |
| JPS56130925A (en) | Manufacture of semiconductor device | |
| JPS543473A (en) | Manufacture of semiconductor device | |
| JPS54162472A (en) | Plasma processing method | |
| JPS54107277A (en) | Production of semiconductor device | |
| JPS57108970A (en) | Pattern checking method | |
| JPS579878A (en) | Plasma etching method and apparatus | |
| JPS5367362A (en) | Manufacture of semiconductor device | |
| JPS55111164A (en) | Semiconductor device and manufacturing method thereof | |
| JPS5483378A (en) | Manufacture of semiconductor device | |
| JPS5760836A (en) | Manufacture of semiconductor device | |
| JPS5546582A (en) | Method of fabricating semiconductor device | |
| JPS54148389A (en) | Manufacture of semiconductor device | |
| JPS54116882A (en) | Manufacture of semiconductor device | |
| JPS5570028A (en) | Fabricating method of semiconductor device |