JPS55111164A - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereofInfo
- Publication number
- JPS55111164A JPS55111164A JP1835979A JP1835979A JPS55111164A JP S55111164 A JPS55111164 A JP S55111164A JP 1835979 A JP1835979 A JP 1835979A JP 1835979 A JP1835979 A JP 1835979A JP S55111164 A JPS55111164 A JP S55111164A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- film
- semiconductor
- coated
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To protect a semiconductor layer in dry etching, by interposing a nichrome film between the contact portions of a semiconductor and an aluminum wiring.
CONSTITUTION: A nichrome film 11 is coated by evaporation or the like all over a polycrystalline silicon wiring layer 3 provided on a semiconductor substrate 1. An aluminum film 4 is coated on the nichrome film 11. A photoresist is coated on the aluminum film 4. Light exposure etc. are effected so that a mask 5 is provided. Dry etching is performed on the aluminum film 4 by CCl4 or BCl3 gas plasma to remove needless aluminum. Wet etching is performed on the nichrome film 11 by a solution of ammonium ceric nitrate. A semiconductor is thus protected from damage in the dry etching of the aluminum layer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1835979A JPS55111164A (en) | 1979-02-21 | 1979-02-21 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1835979A JPS55111164A (en) | 1979-02-21 | 1979-02-21 | Semiconductor device and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55111164A true JPS55111164A (en) | 1980-08-27 |
Family
ID=11969491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1835979A Pending JPS55111164A (en) | 1979-02-21 | 1979-02-21 | Semiconductor device and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55111164A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5374392A (en) * | 1976-12-15 | 1978-07-01 | Hitachi Ltd | Multi-layer coat formation method |
-
1979
- 1979-02-21 JP JP1835979A patent/JPS55111164A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5374392A (en) * | 1976-12-15 | 1978-07-01 | Hitachi Ltd | Multi-layer coat formation method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57170534A (en) | Dry etching method for aluminum and aluminum alloy | |
EP0087312A3 (en) | Formation of regions of different conductivity types in a substrate | |
JPS55111164A (en) | Semiconductor device and manufacturing method thereof | |
JPS57130431A (en) | Manufacture of semiconductor device | |
JPS52104870A (en) | Manufacture for semiconductor device | |
JPS5591138A (en) | Die forming of semiconductor device | |
JPS54107277A (en) | Production of semiconductor device | |
JPS54146966A (en) | Pattern forming method | |
JPS5691430A (en) | Preparation of semiconductor device | |
JPS5496363A (en) | Electrode forming method for semiconductor device | |
JPS51117876A (en) | Semiconductor device manufacturing method | |
JPS56277A (en) | Forming method of metal layer pattern | |
JPS56138941A (en) | Forming method of wiring layer | |
JPS5468179A (en) | Forming method of wiring layer having minute interval | |
JPS5629347A (en) | Manufacture of semiconductor device | |
JPS5598828A (en) | Removing method of thin organic film | |
KR940009769A (en) | Method of forming photoresist fine pattern of semiconductor device | |
JPS5461876A (en) | Etching method of insulation film of semiconductor device | |
JPS57211143A (en) | Formation of micropattern | |
JPS5527661A (en) | Method of manufacturing semiconductor device | |
JPS5230168A (en) | Method for fabrication of semiconductor device | |
JPS5624935A (en) | Etching method of polyquinoxaline | |
JPS5527662A (en) | Method of manufacturing semiconductor device | |
JPS5374389A (en) | Manufacture of semiconductor device | |
JPS5373971A (en) | Manufacture for semiconductor device |