JPS55111164A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof

Info

Publication number
JPS55111164A
JPS55111164A JP1835979A JP1835979A JPS55111164A JP S55111164 A JPS55111164 A JP S55111164A JP 1835979 A JP1835979 A JP 1835979A JP 1835979 A JP1835979 A JP 1835979A JP S55111164 A JPS55111164 A JP S55111164A
Authority
JP
Japan
Prior art keywords
aluminum
film
semiconductor
coated
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1835979A
Other languages
Japanese (ja)
Inventor
Yoichi Nakamura
Kazutoshi Ashikawa
Junichiro Kagami
Takao Miyazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1835979A priority Critical patent/JPS55111164A/en
Publication of JPS55111164A publication Critical patent/JPS55111164A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To protect a semiconductor layer in dry etching, by interposing a nichrome film between the contact portions of a semiconductor and an aluminum wiring.
CONSTITUTION: A nichrome film 11 is coated by evaporation or the like all over a polycrystalline silicon wiring layer 3 provided on a semiconductor substrate 1. An aluminum film 4 is coated on the nichrome film 11. A photoresist is coated on the aluminum film 4. Light exposure etc. are effected so that a mask 5 is provided. Dry etching is performed on the aluminum film 4 by CCl4 or BCl3 gas plasma to remove needless aluminum. Wet etching is performed on the nichrome film 11 by a solution of ammonium ceric nitrate. A semiconductor is thus protected from damage in the dry etching of the aluminum layer.
COPYRIGHT: (C)1980,JPO&Japio
JP1835979A 1979-02-21 1979-02-21 Semiconductor device and manufacturing method thereof Pending JPS55111164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1835979A JPS55111164A (en) 1979-02-21 1979-02-21 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1835979A JPS55111164A (en) 1979-02-21 1979-02-21 Semiconductor device and manufacturing method thereof

Publications (1)

Publication Number Publication Date
JPS55111164A true JPS55111164A (en) 1980-08-27

Family

ID=11969491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1835979A Pending JPS55111164A (en) 1979-02-21 1979-02-21 Semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPS55111164A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374392A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Multi-layer coat formation method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5374392A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Multi-layer coat formation method

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