JPS5760836A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5760836A
JPS5760836A JP13559480A JP13559480A JPS5760836A JP S5760836 A JPS5760836 A JP S5760836A JP 13559480 A JP13559480 A JP 13559480A JP 13559480 A JP13559480 A JP 13559480A JP S5760836 A JPS5760836 A JP S5760836A
Authority
JP
Japan
Prior art keywords
substrate
resist film
level
spinning
corners
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13559480A
Other languages
Japanese (ja)
Inventor
Kenji Sugishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13559480A priority Critical patent/JPS5760836A/en
Publication of JPS5760836A publication Critical patent/JPS5760836A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/18—Coating curved surfaces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To permit photo processing of a substrate with larged diference in level, by a method wherein a resist film is applied by spinning on a substrate and corners of the difference in level which are not coated are removed by etching and are covered again by the resist film coating. CONSTITUTION:For instance, in the photo processing of a high dielectric strength IC of separated dielectric formation, a resist film 10' is applied on a substrate with an island-like convex 2 by spinning. In such case, when the difference in level is large, the corners of the convex are not covered by the resist film 10' even if resist with high viscosity is applied by spinning at low revolution speed. This substrate is plasma-etched in an atmosphere of CF4 gas with 5% of O2 being added so that the corners are made amooth. Then over the substrate a resist film 10'' is applied again and patterning is made by exposing and developing. With above method surface of a substrate with approximately 20mum difference in level can be covered with a resist film and photo processing of such substrate can be made without trouble.
JP13559480A 1980-09-29 1980-09-29 Manufacture of semiconductor device Pending JPS5760836A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13559480A JPS5760836A (en) 1980-09-29 1980-09-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13559480A JPS5760836A (en) 1980-09-29 1980-09-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5760836A true JPS5760836A (en) 1982-04-13

Family

ID=15155464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13559480A Pending JPS5760836A (en) 1980-09-29 1980-09-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5760836A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015088678A (en) * 2013-10-31 2015-05-07 日亜化学工業株式会社 Method for manufacturing semiconductor element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015088678A (en) * 2013-10-31 2015-05-07 日亜化学工業株式会社 Method for manufacturing semiconductor element

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