JPS54137286A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54137286A
JPS54137286A JP4568478A JP4568478A JPS54137286A JP S54137286 A JPS54137286 A JP S54137286A JP 4568478 A JP4568478 A JP 4568478A JP 4568478 A JP4568478 A JP 4568478A JP S54137286 A JPS54137286 A JP S54137286A
Authority
JP
Japan
Prior art keywords
electrode
featuring
gate
insulator film
gate insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4568478A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237549B2 (enrdf_load_stackoverflow
Inventor
Yoshiharu Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4568478A priority Critical patent/JPS54137286A/ja
Publication of JPS54137286A publication Critical patent/JPS54137286A/ja
Publication of JPS6237549B2 publication Critical patent/JPS6237549B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP4568478A 1978-04-17 1978-04-17 Semiconductor device Granted JPS54137286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4568478A JPS54137286A (en) 1978-04-17 1978-04-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4568478A JPS54137286A (en) 1978-04-17 1978-04-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54137286A true JPS54137286A (en) 1979-10-24
JPS6237549B2 JPS6237549B2 (enrdf_load_stackoverflow) 1987-08-13

Family

ID=12726212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4568478A Granted JPS54137286A (en) 1978-04-17 1978-04-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54137286A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6134967A (ja) * 1984-05-03 1986-02-19 デイジタル　イクイプメント　コ−ポレ−シヨン Ｖｌｓｉ集積回路装置用の入力保護構成体
JPS61283155A (ja) * 1985-06-07 1986-12-13 Mitsubishi Electric Corp 半導体装置の入力保護回路
US5113230A (en) * 1982-02-22 1992-05-12 Tokyo Shibaura Denki Kabushi Kaisha Semiconductor device having a conductive layer for preventing insulation layer destruction
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process
US5804878A (en) * 1992-12-09 1998-09-08 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5181579A (enrdf_load_stackoverflow) * 1975-01-16 1976-07-16 Hitachi Ltd

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5181579A (enrdf_load_stackoverflow) * 1975-01-16 1976-07-16 Hitachi Ltd

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5113230A (en) * 1982-02-22 1992-05-12 Tokyo Shibaura Denki Kabushi Kaisha Semiconductor device having a conductive layer for preventing insulation layer destruction
JPS6134967A (ja) * 1984-05-03 1986-02-19 デイジタル　イクイプメント　コ−ポレ−シヨン Ｖｌｓｉ集積回路装置用の入力保護構成体
US4952994A (en) * 1984-05-03 1990-08-28 Digital Equipment Corporation Input protection arrangement for VLSI integrated circuit devices
US5017985A (en) * 1984-05-03 1991-05-21 Digital Equipment Corporation Input protection arrangement for VLSI integrated circuit devices
JPS61283155A (ja) * 1985-06-07 1986-12-13 Mitsubishi Electric Corp 半導体装置の入力保護回路
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process
US6166414A (en) * 1992-12-09 2000-12-26 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US6031290A (en) * 1992-12-09 2000-02-29 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US5804878A (en) * 1992-12-09 1998-09-08 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US6448612B1 (en) 1992-12-09 2002-09-10 Semiconductor Energy Laboratory Co., Ltd. Pixel thin film transistor and a driver circuit for driving the pixel thin film transistor
US6608353B2 (en) 1992-12-09 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having pixel electrode connected to a laminate structure
US7045399B2 (en) 1992-12-09 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US7061016B2 (en) 1992-12-09 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US7105898B2 (en) 1992-12-09 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US7547916B2 (en) 1992-12-09 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US7897972B2 (en) 1992-12-09 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US8294152B2 (en) 1992-12-09 2012-10-23 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit including pixel electrode comprising conductive film

Also Published As

Publication number Publication date
JPS6237549B2 (enrdf_load_stackoverflow) 1987-08-13

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