JPS54112179A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54112179A
JPS54112179A JP2001278A JP2001278A JPS54112179A JP S54112179 A JPS54112179 A JP S54112179A JP 2001278 A JP2001278 A JP 2001278A JP 2001278 A JP2001278 A JP 2001278A JP S54112179 A JPS54112179 A JP S54112179A
Authority
JP
Japan
Prior art keywords
region
type
protective diode
dielectric strength
igfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001278A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6252469B2 (enrdf_load_stackoverflow
Inventor
Hidemi Takakuwa
Akiyasu Ishitani
Yoshihiro Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2001278A priority Critical patent/JPS54112179A/ja
Publication of JPS54112179A publication Critical patent/JPS54112179A/ja
Publication of JPS6252469B2 publication Critical patent/JPS6252469B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/143—VDMOS having built-in components the built-in components being PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
JP2001278A 1978-02-23 1978-02-23 Semiconductor device Granted JPS54112179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001278A JPS54112179A (en) 1978-02-23 1978-02-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001278A JPS54112179A (en) 1978-02-23 1978-02-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54112179A true JPS54112179A (en) 1979-09-01
JPS6252469B2 JPS6252469B2 (enrdf_load_stackoverflow) 1987-11-05

Family

ID=12015192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001278A Granted JPS54112179A (en) 1978-02-23 1978-02-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54112179A (enrdf_load_stackoverflow)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60263845A (ja) * 1984-06-13 1985-12-27 Nohmi Bosai Kogyo Co Ltd ガス検出素子とその製造方法
US4630084A (en) * 1981-02-02 1986-12-16 Siemens Aktiengesellschaft Vertical mis-field effect transistor with low forward resistance
JPS62186565A (ja) * 1986-02-12 1987-08-14 Mitsubishi Electric Corp 電界効果型半導体装置
US4689647A (en) * 1983-11-30 1987-08-25 Kabushiki Kaisha Toshiba Conductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrations
JPS62211954A (ja) * 1986-03-13 1987-09-17 Matsushita Electronics Corp 半導体装置
JPS6323062A (ja) * 1986-07-15 1988-01-30 Aisin Seiki Co Ltd 車両用自動変速機のロツクアツプクラツチ制御方法
JPS63129671A (ja) * 1986-11-12 1988-06-02 シリコニックス・インコーポレイテッド 垂直ｄｍｏｓセル構造
US4789882A (en) * 1983-03-21 1988-12-06 International Rectifier Corporation High power MOSFET with direct connection from connection pads to underlying silicon
JPS648674A (en) * 1987-06-30 1989-01-12 Rohm Co Ltd Vertical mos-fet
JPH01157573A (ja) * 1987-09-28 1989-06-20 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5191395A (en) * 1990-04-02 1993-03-02 Fuji Electric Co., Ltd. Mos type semiconductor device with means to prevent parasitic bipolar transistor
US5563436A (en) * 1992-11-24 1996-10-08 Sgs-Thomson Microelectronics S.A. Forward overvoltage protection circuit for a vertical semiconductor component
US6674123B2 (en) 1997-09-10 2004-01-06 Samsung Electronics Co., Ltd. MOS control diode and method for manufacturing the same
EP3979330A1 (en) * 2020-09-30 2022-04-06 Infineon Technologies AG Silicon carbide device with transistor cell and clamp regions in a well region

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141745U (enrdf_load_stackoverflow) * 1989-04-28 1990-11-29

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932586A (enrdf_load_stackoverflow) * 1972-07-22 1974-03-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932586A (enrdf_load_stackoverflow) * 1972-07-22 1974-03-25

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630084A (en) * 1981-02-02 1986-12-16 Siemens Aktiengesellschaft Vertical mis-field effect transistor with low forward resistance
US4789882A (en) * 1983-03-21 1988-12-06 International Rectifier Corporation High power MOSFET with direct connection from connection pads to underlying silicon
US4689647A (en) * 1983-11-30 1987-08-25 Kabushiki Kaisha Toshiba Conductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrations
JPS60263845A (ja) * 1984-06-13 1985-12-27 Nohmi Bosai Kogyo Co Ltd ガス検出素子とその製造方法
JPS62186565A (ja) * 1986-02-12 1987-08-14 Mitsubishi Electric Corp 電界効果型半導体装置
JPS62211954A (ja) * 1986-03-13 1987-09-17 Matsushita Electronics Corp 半導体装置
JPS6323062A (ja) * 1986-07-15 1988-01-30 Aisin Seiki Co Ltd 車両用自動変速機のロツクアツプクラツチ制御方法
JPS63129671A (ja) * 1986-11-12 1988-06-02 シリコニックス・インコーポレイテッド 垂直ｄｍｏｓセル構造
JPS648674A (en) * 1987-06-30 1989-01-12 Rohm Co Ltd Vertical mos-fet
JPH01157573A (ja) * 1987-09-28 1989-06-20 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5191395A (en) * 1990-04-02 1993-03-02 Fuji Electric Co., Ltd. Mos type semiconductor device with means to prevent parasitic bipolar transistor
US5563436A (en) * 1992-11-24 1996-10-08 Sgs-Thomson Microelectronics S.A. Forward overvoltage protection circuit for a vertical semiconductor component
US6674123B2 (en) 1997-09-10 2004-01-06 Samsung Electronics Co., Ltd. MOS control diode and method for manufacturing the same
EP3979330A1 (en) * 2020-09-30 2022-04-06 Infineon Technologies AG Silicon carbide device with transistor cell and clamp regions in a well region
US12057473B2 (en) 2020-09-30 2024-08-06 Infineon Technologies Ag Silicon carbide device with transistor cell and clamp regions in a well region

Also Published As

Publication number Publication date
JPS6252469B2 (enrdf_load_stackoverflow) 1987-11-05

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