JPS52104087A - Preparation of inter-layer insulation film utilized in multi-layer wir ing of electronic parts - Google Patents

Preparation of inter-layer insulation film utilized in multi-layer wir ing of electronic parts

Info

Publication number
JPS52104087A
JPS52104087A JP1998876A JP1998876A JPS52104087A JP S52104087 A JPS52104087 A JP S52104087A JP 1998876 A JP1998876 A JP 1998876A JP 1998876 A JP1998876 A JP 1998876A JP S52104087 A JPS52104087 A JP S52104087A
Authority
JP
Japan
Prior art keywords
layer
insulation film
inter
preparation
electronic parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998876A
Other languages
Japanese (ja)
Inventor
Hideo Sakai
Takeo Yoshimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1998876A priority Critical patent/JPS52104087A/en
Publication of JPS52104087A publication Critical patent/JPS52104087A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain an inter-layer insulation film free from contamination, humidity and corrision utilized in an IC etc. by providing Si3N4 films on the upper and lower side of a glass insulation film such as silicate glass.
COPYRIGHT: (C)1977,JPO&Japio
JP1998876A 1976-02-27 1976-02-27 Preparation of inter-layer insulation film utilized in multi-layer wir ing of electronic parts Pending JPS52104087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1998876A JPS52104087A (en) 1976-02-27 1976-02-27 Preparation of inter-layer insulation film utilized in multi-layer wir ing of electronic parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1998876A JPS52104087A (en) 1976-02-27 1976-02-27 Preparation of inter-layer insulation film utilized in multi-layer wir ing of electronic parts

Publications (1)

Publication Number Publication Date
JPS52104087A true JPS52104087A (en) 1977-09-01

Family

ID=12014548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1998876A Pending JPS52104087A (en) 1976-02-27 1976-02-27 Preparation of inter-layer insulation film utilized in multi-layer wir ing of electronic parts

Country Status (1)

Country Link
JP (1) JPS52104087A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157242A (en) * 1979-05-28 1980-12-06 Fujitsu Ltd Manufacture of semiconductor device
JPS562654A (en) * 1979-06-21 1981-01-12 Nec Corp Semiconductor device
JPS56123416U (en) * 1980-02-22 1981-09-19
JPS5834945A (en) * 1981-08-26 1983-03-01 Nippon Telegr & Teleph Corp <Ntt> Multilayer wiring constitution
JPS5850755A (en) * 1981-09-21 1983-03-25 Nippon Denso Co Ltd Semiconductor device
JPS5893324A (en) * 1981-11-30 1983-06-03 Nec Corp Semiconductive device
JPS58137233A (en) * 1982-02-09 1983-08-15 Mitsubishi Electric Corp Semiconductor device
US4668973A (en) * 1978-06-19 1987-05-26 Rca Corporation Semiconductor device passivated with phosphosilicate glass over silicon nitride
JPS62222674A (en) * 1985-11-08 1987-09-30 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS62248239A (en) * 1986-04-22 1987-10-29 Nec Corp Manufacture of semiconductor device
JPS63236317A (en) * 1987-03-25 1988-10-03 Toshiba Corp Manufacture of semiconductor device
JP2005310915A (en) * 2004-04-19 2005-11-04 Denso Corp Semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4668973A (en) * 1978-06-19 1987-05-26 Rca Corporation Semiconductor device passivated with phosphosilicate glass over silicon nitride
JPS55157242A (en) * 1979-05-28 1980-12-06 Fujitsu Ltd Manufacture of semiconductor device
JPS562654A (en) * 1979-06-21 1981-01-12 Nec Corp Semiconductor device
JPS56123416U (en) * 1980-02-22 1981-09-19
JPS5834945A (en) * 1981-08-26 1983-03-01 Nippon Telegr & Teleph Corp <Ntt> Multilayer wiring constitution
JPS5850755A (en) * 1981-09-21 1983-03-25 Nippon Denso Co Ltd Semiconductor device
JPS5893324A (en) * 1981-11-30 1983-06-03 Nec Corp Semiconductive device
JPS58137233A (en) * 1982-02-09 1983-08-15 Mitsubishi Electric Corp Semiconductor device
JPS62222674A (en) * 1985-11-08 1987-09-30 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS62248239A (en) * 1986-04-22 1987-10-29 Nec Corp Manufacture of semiconductor device
JPS63236317A (en) * 1987-03-25 1988-10-03 Toshiba Corp Manufacture of semiconductor device
JP2005310915A (en) * 2004-04-19 2005-11-04 Denso Corp Semiconductor device

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