JPS5023382A - - Google Patents

Info

Publication number
JPS5023382A
JPS5023382A JP48125869A JP12586973A JPS5023382A JP S5023382 A JPS5023382 A JP S5023382A JP 48125869 A JP48125869 A JP 48125869A JP 12586973 A JP12586973 A JP 12586973A JP S5023382 A JPS5023382 A JP S5023382A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48125869A
Other languages
Japanese (ja)
Other versions
JPS5319319B2 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5023382A publication Critical patent/JPS5023382A/ja
Publication of JPS5319319B2 publication Critical patent/JPS5319319B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP12586973A 1973-07-05 1973-11-08 Expired JPS5319319B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US376322A US3878085A (en) 1973-07-05 1973-07-05 Cathode sputtering apparatus

Publications (2)

Publication Number Publication Date
JPS5023382A true JPS5023382A (de) 1975-03-13
JPS5319319B2 JPS5319319B2 (de) 1978-06-20

Family

ID=23484536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12586973A Expired JPS5319319B2 (de) 1973-07-05 1973-11-08

Country Status (3)

Country Link
US (1) US3878085A (de)
JP (1) JPS5319319B2 (de)
DE (1) DE2431832B2 (de)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109185A (de) * 1974-01-31 1975-08-28
JPS5197548U (de) * 1975-02-03 1976-08-05
JPS51117933A (en) * 1975-04-10 1976-10-16 Tokuda Seisakusho Spattering apparatus
JPS51137681A (en) * 1975-05-23 1976-11-27 Tokuda Seisakusho Ltd Sputtering apparatus
JPS5252133A (en) * 1975-07-11 1977-04-26 Tokuda Seisakusho Continuous film coating apparatus
JPS5262344U (de) * 1975-10-31 1977-05-09
JPS52117548U (de) * 1976-03-02 1977-09-06
JPS5379776A (en) * 1976-12-24 1978-07-14 Ulvac Corp Sputtering apparatus
JPS55148769A (en) * 1979-05-04 1980-11-19 Toshiba Corp Magnetron type sputtering apparatus
US4441974A (en) * 1982-04-30 1984-04-10 Tokyo Shibaura Denki Kabushiki Kaisha Magnetron sputtering apparatus
JPS6186459U (de) * 1984-11-14 1986-06-06

Families Citing this family (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4046659A (en) * 1974-05-10 1977-09-06 Airco, Inc. Method for coating a substrate
US4060470A (en) * 1974-12-06 1977-11-29 Clarke Peter J Sputtering apparatus and method
US3956093A (en) * 1974-12-16 1976-05-11 Airco, Inc. Planar magnetron sputtering method and apparatus
US4013532A (en) * 1975-03-03 1977-03-22 Airco, Inc. Method for coating a substrate
US4025410A (en) * 1975-08-25 1977-05-24 Western Electric Company, Inc. Sputtering apparatus and methods using a magnetic field
CH611938A5 (de) * 1976-05-19 1979-06-29 Battelle Memorial Institute
DE2655942A1 (de) * 1976-12-10 1978-06-15 Tokuda Seisakusho Kawasaki Kk Zerstaeubungsvorrichtung
US4155825A (en) * 1977-05-02 1979-05-22 Fournier Paul R Integrated sputtering apparatus and method
US4100055A (en) * 1977-06-10 1978-07-11 Varian Associates, Inc. Target profile for sputtering apparatus
DE2735525A1 (de) * 1977-08-06 1979-02-22 Leybold Heraeus Gmbh & Co Kg Katodenanordnung mit target fuer zerstaeubungsanlagen zum aufstaeuben dielektrischer oder amagnetischer schichten auf substrate
US4116806A (en) * 1977-12-08 1978-09-26 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
US4175030A (en) * 1977-12-08 1979-11-20 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
US4162954A (en) * 1978-08-21 1979-07-31 Vac-Tec Systems, Inc. Planar magnetron sputtering device
US4180450A (en) * 1978-08-21 1979-12-25 Vac-Tec Systems, Inc. Planar magnetron sputtering device
US4219397A (en) * 1978-11-24 1980-08-26 Clarke Peter J Magnetron sputter apparatus
US4194962A (en) * 1978-12-20 1980-03-25 Advanced Coating Technology, Inc. Cathode for sputtering
US4183797A (en) * 1978-12-22 1980-01-15 International Business Machines Corporation Two-sided bias sputter deposition method and apparatus
US4204936A (en) * 1979-03-29 1980-05-27 The Perkin-Elmer Corporation Method and apparatus for attaching a target to the cathode of a sputtering system
GB2051877B (en) * 1979-04-09 1983-03-02 Vac Tec Syst Magnetically enhanced sputtering device and method
US4312731A (en) * 1979-04-24 1982-01-26 Vac-Tec Systems, Inc. Magnetically enhanced sputtering device and method
US4673480A (en) * 1980-05-16 1987-06-16 Varian Associates, Inc. Magnetically enhanced sputter source
US4457825A (en) * 1980-05-16 1984-07-03 Varian Associates, Inc. Sputter target for use in a sputter coating source
DE3030329C2 (de) * 1980-08-11 1983-06-01 W.C. Heraeus Gmbh, 6450 Hanau Sputterkörper
US4361472A (en) * 1980-09-15 1982-11-30 Vac-Tec Systems, Inc. Sputtering method and apparatus utilizing improved ion source
US4379040A (en) * 1981-01-29 1983-04-05 Ppg Industries, Inc. Method of and apparatus for control of reactive sputtering deposition
US4336119A (en) * 1981-01-29 1982-06-22 Ppg Industries, Inc. Method of and apparatus for control of reactive sputtering deposition
JPS5850312B2 (ja) * 1981-02-18 1983-11-09 株式会社日立製作所 スパツタリング装置
US4472259A (en) * 1981-10-29 1984-09-18 Materials Research Corporation Focusing magnetron sputtering apparatus
US4385979A (en) * 1982-07-09 1983-05-31 Varian Associates, Inc. Target assemblies of special materials for use in sputter coating apparatus
US4415427A (en) * 1982-09-30 1983-11-15 Gte Products Corporation Thin film deposition by sputtering
US4466872A (en) * 1982-12-23 1984-08-21 At&T Technologies, Inc. Methods of and apparatus for depositing a continuous film of minimum thickness
JPS6010029U (ja) * 1983-06-30 1985-01-23 ワイケイケイ株式会社 日除け装置
US4515675A (en) * 1983-07-06 1985-05-07 Leybold-Heraeus Gmbh Magnetron cathode for cathodic evaportion apparatus
US4500408A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Apparatus for and method of controlling sputter coating
US4500409A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Magnetron sputter coating source for both magnetic and non magnetic target materials
DE3429988A1 (de) * 1983-12-05 1985-06-13 Leybold-Heraeus GmbH, 5000 Köln Magnetronkatode zum zerstaeuben ferromagnetischer targets
DE3442206A1 (de) * 1983-12-05 1985-07-11 Leybold-Heraeus GmbH, 5000 Köln Magnetronkatode zum zerstaeuben ferromagnetischer targets
US4521287A (en) * 1984-06-28 1985-06-04 General Motors Corporation High rate sputtering of exhaust oxygen sensor electrode
US4517070A (en) * 1984-06-28 1985-05-14 General Motors Corporation Magnetron sputtering cathode assembly and magnet assembly therefor
US4724058A (en) * 1984-08-13 1988-02-09 Vac-Tec Systems, Inc. Method and apparatus for arc evaporating large area targets
CH664303A5 (de) * 1985-04-03 1988-02-29 Balzers Hochvakuum Haltevorrichtung fuer targets fuer kathodenzerstaeubung.
JPS6260866A (ja) * 1985-08-02 1987-03-17 Fujitsu Ltd マグネトロンスパツタ装置
US4766813A (en) * 1986-12-29 1988-08-30 Olin Corporation Metal shaped charge liner with isotropic coating
US5298136A (en) * 1987-08-18 1994-03-29 Regents Of The University Of Minnesota Steered arc coating with thick targets
IT1211938B (it) * 1987-11-27 1989-11-08 Siv Soc Italiana Vetro Apparecchiatura e procedimento per la deposizione di uno strato sottile su un substrato trasparente, particolarmente per la realizzazione di vetrature
KR920003789B1 (ko) * 1988-02-08 1992-05-14 니뽄 덴신 덴와 가부시끼가이샤 플라즈마 스퍼터링을 이용한 박막 형성 장치 및 이온원
US4892633A (en) * 1988-11-14 1990-01-09 Vac-Tec Systems, Inc. Magnetron sputtering cathode
US4865708A (en) * 1988-11-14 1989-09-12 Vac-Tec Systems, Inc. Magnetron sputtering cathode
DE3844064A1 (de) * 1988-12-28 1990-07-05 Leybold Ag Katodenzerstaeubungsvorrichtung nach dem magnetron-prinzip mit einer hohlkatode und einem zylindrischen target
US4957605A (en) * 1989-04-17 1990-09-18 Materials Research Corporation Method and apparatus for sputter coating stepped wafers
US5178743A (en) * 1989-06-15 1993-01-12 Microelectronics And Computer Technology Corporation Cylindrical magnetron sputtering system
US5234560A (en) * 1989-08-14 1993-08-10 Hauzer Holdings Bv Method and device for sputtering of films
US5073245A (en) * 1990-07-10 1991-12-17 Hedgcoth Virgle L Slotted cylindrical hollow cathode/magnetron sputtering device
US5437778A (en) * 1990-07-10 1995-08-01 Telic Technologies Corporation Slotted cylindrical hollow cathode/magnetron sputtering device
CA2098725A1 (en) * 1991-01-28 1992-07-29 Daniel R. Marx Target for cathode sputtering
EP0581902A4 (de) * 1991-04-19 1994-03-23 Surface Solutions Inc Verfahren und vorrichtung zur linearen magnetronzerstäubung.
US5262032A (en) * 1991-05-28 1993-11-16 Leybold Aktiengesellschaft Sputtering apparatus with rotating target and target cooling
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
US5277779A (en) * 1992-04-14 1994-01-11 Henshaw William F Rectangular cavity magnetron sputtering vapor source
US5262028A (en) * 1992-06-01 1993-11-16 Sierra Applied Sciences, Inc. Planar magnetron sputtering magnet assembly
US5328582A (en) * 1992-12-04 1994-07-12 Honeywell Inc. Off-axis magnetron sputter deposition of mirrors
DE59400046D1 (de) * 1994-04-07 1995-12-21 Balzers Hochvakuum Magnetronzerstäubungsquelle und deren Verwendung.
US5441614A (en) * 1994-11-30 1995-08-15 At&T Corp. Method and apparatus for planar magnetron sputtering
CH691643A5 (de) * 1995-10-06 2001-08-31 Unaxis Balzers Ag Magnetronzerstäubungsquelle und deren Verwendung.
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US6579426B1 (en) 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US6565717B1 (en) * 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6152040A (en) * 1997-11-26 2000-11-28 Ashurst Government Services, Inc. Shaped charge and explosively formed penetrator liners and process for making same
US5935397A (en) * 1998-04-30 1999-08-10 Rockwell Semiconductor Systems, Inc. Physical vapor deposition chamber
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
US6132566A (en) * 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
US6258217B1 (en) 1999-09-29 2001-07-10 Plasma-Therm, Inc. Rotating magnet array and sputter source
US6444100B1 (en) 2000-02-11 2002-09-03 Seagate Technology Llc Hollow cathode sputter source
TW584905B (en) 2000-02-25 2004-04-21 Tokyo Electron Ltd Method and apparatus for depositing films
US6436252B1 (en) 2000-04-07 2002-08-20 Surface Engineered Products Corp. Method and apparatus for magnetron sputtering
US6689253B1 (en) * 2001-06-15 2004-02-10 Seagate Technology Llc Facing target assembly and sputter deposition apparatus
US6761804B2 (en) * 2002-02-11 2004-07-13 Applied Materials, Inc. Inverted magnetron
US20030183518A1 (en) * 2002-03-27 2003-10-02 Glocker David A. Concave sputtering apparatus
US7411352B2 (en) * 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
EP1554412B1 (de) * 2002-09-19 2013-08-14 General Plasma, Inc. Plasmaunterstützte chemische Gasphasenabscheidung Vorrichtung
US20040262148A1 (en) * 2003-06-23 2004-12-30 Cheng Yuanda Randy Sputter cathode assembly for uniform film deposition
US20060049040A1 (en) * 2004-01-07 2006-03-09 Applied Materials, Inc. Apparatus and method for two dimensional magnetron scanning for sputtering onto flat panels
US8500975B2 (en) * 2004-01-07 2013-08-06 Applied Materials, Inc. Method and apparatus for sputtering onto large flat panels
US7513982B2 (en) * 2004-01-07 2009-04-07 Applied Materials, Inc. Two dimensional magnetron scanning for flat panel sputtering
ES2320366T3 (es) * 2004-10-18 2009-05-21 Bekaert Advanced Coatings Bloque terminal plano para portar un material de pulverizacion ionica de manera giratoria.
ES2319569T3 (es) * 2005-03-11 2009-05-08 Bekaert Advanced Coatings Bloque terminal sencillo, de angulo recto.
JP4923450B2 (ja) * 2005-07-01 2012-04-25 富士ゼロックス株式会社 バッチ処理支援装置および方法、プログラム
US20070084720A1 (en) * 2005-07-13 2007-04-19 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012663A1 (en) * 2005-07-13 2007-01-18 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012559A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Method of improving magnetron sputtering of large-area substrates using a removable anode
US20070012558A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Magnetron sputtering system for large-area substrates
US20070051616A1 (en) * 2005-09-07 2007-03-08 Le Hienminh H Multizone magnetron assembly
US7588668B2 (en) * 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056850A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
US8698400B2 (en) * 2009-04-28 2014-04-15 Leybold Optics Gmbh Method for producing a plasma beam and plasma source
DE102009018912A1 (de) 2009-04-28 2010-11-18 Leybold Optics Gmbh Verfahren zur Erzeugung eines Plasmastrahls sowie Plasmaquelle
JP6093362B2 (ja) 2011-09-28 2017-03-08 ビューラー アルツェナウ ゲゼルシャフト ミット ベシュレンクテル ハフツングＢｕｅｈｌｅｒ Ａｌｚｅｎａｕ ＧｍｂＨ 基板上に反射低減層を生成するための方法および装置
US20180044778A1 (en) * 2015-03-02 2018-02-15 Tosoh Smd, Inc. Sputtering target having reverse bowng target geometry
RU2620845C1 (ru) * 2015-12-17 2017-05-30 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технологический университет "СТАНКИН" (ФГБОУ ВО "МГТУ "СТАНКИН") Устройство для синтеза и осаждения покрытий
EP3438322B1 (de) * 2016-03-30 2022-05-25 Keihin Ramtech Co., Ltd. Sputtervorrichtung und verfahren zur herstellung eines foliengeformten körpers
RU2649904C1 (ru) * 2016-11-18 2018-04-05 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технологический университет "СТАНКИН" (ФГБОУ ВО "МГТУ "СТАНКИН") Устройство для синтеза и осаждения металлических покрытий на токопроводящих изделиях
BE1026859B1 (nl) 2018-10-22 2020-07-14 Soleras Advanced Coatings Bv Magnetron met geïntegreerd circuit voor het monitoren en controle
JP7245661B2 (ja) * 2019-01-30 2023-03-24 Ｊｓｗアフティ株式会社 ターゲットおよび成膜装置並びに成膜対象物の製造方法
RU2726223C1 (ru) * 2019-11-28 2020-07-10 Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технологический университет "СТАНКИН" (ФГБОУ ВО "МГТУ "СТАНКИН") Магнетронное распылительное устройство
RU2761900C1 (ru) * 2021-02-08 2021-12-13 Федеральное государственное бюджетное учреждение науки Институт радиотехники и электроники им. В.А. Котельникова Российской академии наук Магнетронное распылительное устройство

Family Cites Families (4)

* Cited by examiner, † Cited by third party
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US3616450A (en) * 1968-11-07 1971-10-26 Peter J Clark Sputtering apparatus
US3728246A (en) * 1970-01-22 1973-04-17 E Barkhudarov Device for applying thin films to articles
US3711398A (en) * 1971-02-18 1973-01-16 P Clarke Sputtering apparatus
FR2154459B1 (de) * 1971-09-28 1974-08-19 Ibm

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109185A (de) * 1974-01-31 1975-08-28
JPS5197548U (de) * 1975-02-03 1976-08-05
JPS561723Y2 (de) * 1975-02-03 1981-01-16
JPS51117933A (en) * 1975-04-10 1976-10-16 Tokuda Seisakusho Spattering apparatus
JPS5526710B2 (de) * 1975-04-10 1980-07-15
JPS51137681A (en) * 1975-05-23 1976-11-27 Tokuda Seisakusho Ltd Sputtering apparatus
JPS5622951B2 (de) * 1975-05-23 1981-05-28
JPS555587B2 (de) * 1975-07-11 1980-02-07
JPS5252133A (en) * 1975-07-11 1977-04-26 Tokuda Seisakusho Continuous film coating apparatus
JPS557554Y2 (de) * 1975-10-31 1980-02-20
JPS5262344U (de) * 1975-10-31 1977-05-09
JPS557555Y2 (de) * 1976-03-02 1980-02-20
JPS52117548U (de) * 1976-03-02 1977-09-06
JPS5379776A (en) * 1976-12-24 1978-07-14 Ulvac Corp Sputtering apparatus
JPS5540662B2 (de) * 1976-12-24 1980-10-20
JPS55148769A (en) * 1979-05-04 1980-11-19 Toshiba Corp Magnetron type sputtering apparatus
JPS5813622B2 (ja) * 1979-05-04 1983-03-15 株式会社東芝 マグネトロン型スパッタ装置
US4441974A (en) * 1982-04-30 1984-04-10 Tokyo Shibaura Denki Kabushiki Kaisha Magnetron sputtering apparatus
JPS6186459U (de) * 1984-11-14 1986-06-06

Also Published As

Publication number Publication date
DE2431832A1 (de) 1975-01-30
JPS5319319B2 (de) 1978-06-20
DE2431832B2 (de) 1981-07-02
US3878085A (en) 1975-04-15

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