JP6093362B2 - 基板上に反射低減層を生成するための方法および装置 - Google Patents
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Description
Claims (6)
- プラスチック基板(20)の表面(21)上に反射低減層を形成するために構成された装置(1)であって、
・前記プラスチック基板(20)の表面(21)上に下地層(22)を被膜するための第1のスパッタ装置(3)と、
・前記被膜された表面(21)のプラズマエッチング処理を行うために構成されたプラズマ源(4)と、
・少なくとも1種のプラズマガスを導入するための少なくとも1つのインレット(8)と、
前記表面(21)上に保護層(24)を被膜するための第2のスパッタ装置(5)を有する、装置(1)において、
・前記装置(1)は真空チャンバ(2)を有し、当該真空チャンバ(2)内に前記第1のスパッタ装置(3)と前記プラズマ源(4)と前記第2のスパッタ装置(5)とを含む処理装置(3,4,5)が設置されており、
・前記装置(1)は前記真空チャンバ(2)の内部空間に、各処理装置(3,4,5)間にて前記プラスチック基板(20)を移動させるための搬送装置(10)を有しており、
・前記プラズマ源(4)は、100℃未満の基板温度でプラズマエッチング処理を実施可能に構成されており、
抽出電極の面積に対する前記プラズマ源(4)の出力密度は、0.5〜1.5W/cm 2 である、
ことを特徴とする装置(1)。 - 前記第1のスパッタ装置(3)は、前記下地層(22)のスパッタのためのターゲットを有し、前記下地層(22)は、Zr,Cr,Al,Ta,Nbおよび/またはHfの元素の酸化物、窒化物またはフッ化物から成る、
請求項1記載の装置(1)。 - 前記下地層(22)の厚さは1nm〜5nmである、
請求項1または2記載の装置(1)。 - プラスチック基板(20)の表面(21)上に反射低減層を形成する製造方法であって、
・第1のスパッタ装置(3)において、前記プラスチック基板(20)の表面(21)上に誘電体の下地層(22)を被膜するステップと、
・プラズマ源(4)を用いてプラズマエッチングにより、前記被膜された表面(21)を処理するステップと、
・第2のスパッタ装置(5)において、処理された前記表面(21)上に保護層(24)を被膜するステップと
を有する製造方法において、
・搬送装置(10)を用いて、同一の真空チャンバ(2)内に設置された、前記第1のスパッタ装置(3)と前記プラズマ源(4)と前記第2のスパッタ装置(5)とを含む処理装置(3,4,5)間において前記プラスチック基板(20)を移動させ、
・100℃未満の基板温度でプラズマエッチング処理を実施し、
抽出電極の面積に対する前記プラズマ源(4)の出力密度は、0.5〜1.5W/cm 2 である、
ことを特徴とする製造方法。 - 前記下地層(22)は、Zr,Cr,Al,Ta,Nbおよび/またはHfの元素の酸化物、窒化物またはフッ化物から成る、
請求項4記載の製造方法。 - 前記下地層(22)の厚さは1nm〜5nmである、
請求項4または5記載の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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DE102011114450.5 | 2011-09-28 | ||
DE102011114450 | 2011-09-28 | ||
PCT/EP2012/004093 WO2013045111A1 (de) | 2011-09-28 | 2012-09-28 | Verfahren und vorrichtung zur erzeugung einer reflektionsmindernden schicht auf einem substrat |
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JP2014530297A JP2014530297A (ja) | 2014-11-17 |
JP6093362B2 true JP6093362B2 (ja) | 2017-03-08 |
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US (1) | US9589768B2 (ja) |
EP (1) | EP2761643B1 (ja) |
JP (1) | JP6093362B2 (ja) |
KR (2) | KR20140086989A (ja) |
CN (1) | CN103959425A (ja) |
TW (1) | TWI595258B (ja) |
WO (1) | WO2013045111A1 (ja) |
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CN103959425A (zh) * | 2011-09-28 | 2014-07-30 | 莱博德光学有限责任公司 | 用于在基底上制造减反射层的方法和设备 |
JP2016169401A (ja) * | 2015-03-11 | 2016-09-23 | 株式会社トプコン | スパッタリング装置 |
KR20170026985A (ko) * | 2015-09-01 | 2017-03-09 | 한국화학연구원 | 탄화불소 박막의 제조방법 및 이의 제조장치 |
WO2017039339A1 (ko) * | 2015-09-01 | 2017-03-09 | 한국화학연구원 | 탄화불소 박막의 제조방법 |
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KR20140086989A (ko) | 2014-07-08 |
CN103959425A (zh) | 2014-07-30 |
TWI595258B (zh) | 2017-08-11 |
EP2761643B1 (de) | 2023-07-12 |
US9589768B2 (en) | 2017-03-07 |
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