JP5909807B2 - プラズマ処理装置およびプラズマ処理方法 - Google Patents
プラズマ処理装置およびプラズマ処理方法 Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 20
- 230000007935 neutral effect Effects 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
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Description
前記閉じ込め領域から活性化した中性のラジカルが処理すべき基体に選択的に到達するように、前記閉じ込め領域を通過する磁力線を横切る方向において前記基体を前記閉じ込め領域に対向させて配置する保持機構を有する、ことを特徴とする。
前記閉じ込め領域から活性化した中性のラジカルが処理すべき基体に選択的に到達するように、前記閉じ込め領域を通過する磁力線を横切る方向において前記基体を前記閉じ込め領域に対向させて配置する、ことを特徴とする。
図1は、電子サイクロトロン共鳴(ECR)によるプラズマ生成を用いた成膜装置1を示している。後述するように、ミラー磁場閉じ込めプラズマを利用したALD(Atomic Layer Deposition)プロセスを行う装置である。処理チャンバ10は、アルミニウム合金、ステンレス等の導電性材料で形成され、基準電位に接続されている。処理チャンバ10の上部には、天板11が設けられ、N2ガスを供給する供給装置12および材料ガスGを供給する供給装置13が設けられている。処理チャンバ10の底部には、ウエハWを保持するステージ50が設けられている。また、処理チャンバ10には、図示しないが、処理チャンバ10内の雰囲気を排気するための排気口が設けられ、この排気口に処理チャンバ10の外部に設置された図示しない真空ポンプなどの排気装置が接続される。この排気装置により、処理チャンバ10内は減圧される。
図6に本発明のプラズマ処理装置の他の実施形態に係るスパッタ装置を示す。なお、図6において、図1に示す装置と同様の構成部分には同一の符号を付している。このスパッタ装置は、ミラー磁場閉じ込めプラズマをスパッタプロセスに適用したものである。処理チャンバ10の天板111には、バッキングプレート122の下面に保持されたマグネトロンスパッタ源としてのターゲットTGが設けられている。ターゲットTGは、バッキングプレート122を介してDC電源200が接続されている。また、処理チャンバ10の側壁には、Arガス又はN2ガスを処理チャンバ10内に導入するための供給装置113が設けられている。
10 処理チャンバ
15 導波管
16 入射窓
17A プラズマ生成室
17B 対向端部室
18A,18B 筒状部材
20 リミッター部材
30A,30B 電流コイル
40 電位調整用分割リング
41,42,43 電極
50 ステージ
200 DC電源
RP 共鳴点
PCR 閉じ込め領域
W ウエハ(基体)
Claims (4)
- ミラー磁場を形成するミラー磁場形成機構と、マイクロ波を供給するマイクロ波供給機構と、を有し、前記ミラー磁場と前記マイクロ波とによる電子サイクロトロン共鳴によりプラズマを生成するとともに、前記ミラー磁場により所定の閉じ込め領域に当該プラズマを閉じ込めるプラズマ処理装置であって、
前記閉じ込め領域を通過する磁力線を横切る方向において前記基体を前記閉じ込め領域に対向させて配置する保持機構を有し、
共鳴点が前記閉じ込め領域の所定の軸線方向における一端部に形成されるとともに当該共鳴点付近でプラズマが生成されるように、マイクロ波を前記閉じ込め領域の一端側から前記所定の軸線方向に沿って供給するための導波管を有し、
前記閉じ込め領域に閉じ込められたプラズマに生じる径方向の電位勾配と逆向きの電位勾配を与えて電位を平坦化して、プラズマが径方向に拡散してプラズマ中の荷電粒子が基体に到達するのを抑制するための電位調整用部材を前記閉じ込め領域の前記所定の軸線方向における他端部側に有し、
前記基体の表面と前記閉じ込め領域の外延との距離が、プラズマ中の荷電粒子が前記閉じ込め領域に閉じ込められた状態で、当該閉じ込め領域から活性化した中性のラジカルが活性を失うことなく処理すべき基体に選択的に到達するように設定される、
ことを特徴とするプラズマ処理装置。」 - 前記閉じ込め領域の前記磁力線を横切る方向における外延を画定するリミッター部材をさらに有し、
前記リミッター部材は、前記閉じ込め領域内の磁場強度の最小点と前記共鳴点との間の位置に配置されている、ことを特徴とする請求項1に記載のプラズマ処理装置。 - 前記プラズマ生成空間を画定する壁面を有し、
前記壁面の少なくとも一部の形成材料が、前記基体の形成材料を含む、ことを特徴とする請求項1又は2に記載のプラズマ処理装置。 - ミラー磁場とマイクロ波とによる電子サイクロトロン共鳴によりプラズマを生成するとともに、前記ミラー磁場により所定の閉じ込め領域に当該プラズマを閉じ込め、
前記閉じ込め領域から活性化した中性のラジカルが処理すべき基体に選択的に到達するように、前記閉じ込め領域を通過する磁力線を横切る方向において前記基体を前記閉じ込め領域に対向させて配置し、
前記マイクロ波を、前記閉じ込め領域の一端側から所定の軸線方向に沿って供給して共鳴点を前記閉じ込め領域の前記所定の軸線方向における一端部に形成し、当該共鳴点付近でプラズマを生成し、
前記閉じ込め領域に閉じ込められたプラズマが径方向に拡散してプラズマ中の荷電粒子が基体に到達するのを抑制するために、電位調整部材を前記閉じ込め領域の前記所定の軸線方向における他端部側に設け、前記閉じ込め領域に閉じ込められたプラズマに生じる径方向の電位勾配と逆向きの電位勾配を与えて電位を平坦化し、
前記基体の表面と前記閉じ込め領域の外延との距離を、プラズマ中の荷電粒子が前記閉じ込め領域に閉じ込められた状態で、当該閉じ込め領域から活性化した中性のラジカルが活性を失うことなく処理すべき基体に選択的に到達するように設定する、
ことを特徴とするプラズマ処理方法。
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