JPH118387A5 - - Google Patents

Info

Publication number
JPH118387A5
JPH118387A5 JP1997161488A JP16148897A JPH118387A5 JP H118387 A5 JPH118387 A5 JP H118387A5 JP 1997161488 A JP1997161488 A JP 1997161488A JP 16148897 A JP16148897 A JP 16148897A JP H118387 A5 JPH118387 A5 JP H118387A5
Authority
JP
Japan
Prior art keywords
conductivity type
impurity
drain
source
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997161488A
Other languages
English (en)
Japanese (ja)
Other versions
JPH118387A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9161488A priority Critical patent/JPH118387A/ja
Priority claimed from JP9161488A external-priority patent/JPH118387A/ja
Priority to US08/990,754 priority patent/US6518625B1/en
Priority to KR1019980000282A priority patent/KR100300695B1/ko
Publication of JPH118387A publication Critical patent/JPH118387A/ja
Publication of JPH118387A5 publication Critical patent/JPH118387A5/ja
Pending legal-status Critical Current

Links

JP9161488A 1997-06-18 1997-06-18 半導体装置およびその製造方法 Pending JPH118387A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9161488A JPH118387A (ja) 1997-06-18 1997-06-18 半導体装置およびその製造方法
US08/990,754 US6518625B1 (en) 1997-06-18 1997-12-15 Semiconductor device
KR1019980000282A KR100300695B1 (ko) 1997-06-18 1998-01-08 반도체장치및그제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9161488A JPH118387A (ja) 1997-06-18 1997-06-18 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH118387A JPH118387A (ja) 1999-01-12
JPH118387A5 true JPH118387A5 (enExample) 2004-09-02

Family

ID=15736039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9161488A Pending JPH118387A (ja) 1997-06-18 1997-06-18 半導体装置およびその製造方法

Country Status (3)

Country Link
US (1) US6518625B1 (enExample)
JP (1) JPH118387A (enExample)
KR (1) KR100300695B1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724052B2 (en) * 1997-12-31 2004-04-20 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating a semiconductor device
JP4832629B2 (ja) * 2000-10-04 2011-12-07 ルネサスエレクトロニクス株式会社 半導体装置
JP2003100862A (ja) * 2001-09-21 2003-04-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003133433A (ja) * 2001-10-25 2003-05-09 Toshiba Corp 半導体装置およびその製造方法
JP2004221246A (ja) * 2003-01-14 2004-08-05 Seiko Epson Corp 半導体装置及びその製造方法
JP4057985B2 (ja) 2003-09-19 2008-03-05 株式会社東芝 半導体装置の製造方法
JP2006108365A (ja) * 2004-10-05 2006-04-20 Renesas Technology Corp 半導体装置およびその製造方法
KR100680958B1 (ko) * 2005-02-23 2007-02-09 주식회사 하이닉스반도체 피모스 트랜지스터의 제조방법
JP2011192841A (ja) 2010-03-15 2011-09-29 Toshiba Corp 半導体装置
JP5492747B2 (ja) * 2010-11-22 2014-05-14 パナソニック株式会社 半導体装置
JP5950507B2 (ja) 2011-05-02 2016-07-13 キヤノン株式会社 半導体装置の製造方法およびｃｍｏｓイメージセンサーの製造方法
US9343318B2 (en) * 2012-02-07 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Salicide formation using a cap layer
US9748356B2 (en) 2012-09-25 2017-08-29 Stmicroelectronics, Inc. Threshold adjustment for quantum dot array devices with metal source and drain
US9601630B2 (en) 2012-09-25 2017-03-21 Stmicroelectronics, Inc. Transistors incorporating metal quantum dots into doped source and drain regions
US10002938B2 (en) 2013-08-20 2018-06-19 Stmicroelectronics, Inc. Atomic layer deposition of selected molecular clusters
TWI699897B (zh) * 2014-11-21 2020-07-21 日商半導體能源研究所股份有限公司 半導體裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4597824A (en) * 1983-11-11 1986-07-01 Kabushiki Kaisha Toshiba Method of producing semiconductor device
US5340760A (en) * 1986-05-26 1994-08-23 Kazuhiro Komori Method of manufacturing EEPROM memory device
US4949136A (en) 1988-06-09 1990-08-14 University Of Connecticut Submicron lightly doped field effect transistors
US5320974A (en) * 1991-07-25 1994-06-14 Matsushita Electric Industrial Co., Ltd. Method for making semiconductor transistor device by implanting punch through stoppers
JPH0653233A (ja) 1992-07-27 1994-02-25 Toshiba Corp 半導体装置の製造方法
JPH07249761A (ja) 1994-03-09 1995-09-26 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
JPH07263690A (ja) 1994-03-25 1995-10-13 Ricoh Co Ltd サリサイド構造を有する半導体装置とその製造方法
US5428240A (en) * 1994-07-07 1995-06-27 United Microelectronics Corp. Source/drain structural configuration for MOSFET integrated circuit devices
JPH08125180A (ja) * 1994-10-25 1996-05-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5668024A (en) * 1996-07-17 1997-09-16 Taiwan Semiconductor Manufacturing Company CMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation process
US5793089A (en) * 1997-01-10 1998-08-11 Advanced Micro Devices, Inc. Graded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereon

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