JPH118387A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPH118387A
JPH118387A JP9161488A JP16148897A JPH118387A JP H118387 A JPH118387 A JP H118387A JP 9161488 A JP9161488 A JP 9161488A JP 16148897 A JP16148897 A JP 16148897A JP H118387 A JPH118387 A JP H118387A
Authority
JP
Japan
Prior art keywords
layer
drain
source
oxide film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9161488A
Other languages
English (en)
Japanese (ja)
Other versions
JPH118387A5 (enExample
Inventor
Masao Nishida
征男 西田
Satoru Shimizu
悟 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9161488A priority Critical patent/JPH118387A/ja
Priority to US08/990,754 priority patent/US6518625B1/en
Priority to KR1019980000282A priority patent/KR100300695B1/ko
Publication of JPH118387A publication Critical patent/JPH118387A/ja
Publication of JPH118387A5 publication Critical patent/JPH118387A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0225—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/608—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having non-planar bodies, e.g. having recessed gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H10D64/259—Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
JP9161488A 1997-06-18 1997-06-18 半導体装置およびその製造方法 Pending JPH118387A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9161488A JPH118387A (ja) 1997-06-18 1997-06-18 半導体装置およびその製造方法
US08/990,754 US6518625B1 (en) 1997-06-18 1997-12-15 Semiconductor device
KR1019980000282A KR100300695B1 (ko) 1997-06-18 1998-01-08 반도체장치및그제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9161488A JPH118387A (ja) 1997-06-18 1997-06-18 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH118387A true JPH118387A (ja) 1999-01-12
JPH118387A5 JPH118387A5 (enExample) 2004-09-02

Family

ID=15736039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9161488A Pending JPH118387A (ja) 1997-06-18 1997-06-18 半導体装置およびその製造方法

Country Status (3)

Country Link
US (1) US6518625B1 (enExample)
JP (1) JPH118387A (enExample)
KR (1) KR100300695B1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110976A (ja) * 2000-10-04 2002-04-12 Mitsubishi Electric Corp 半導体装置及び半導体装置の製造方法
JP2006108365A (ja) * 2004-10-05 2006-04-20 Renesas Technology Corp 半導体装置およびその製造方法
US7265400B2 (en) 2003-09-19 2007-09-04 Kabushiki Kaisha Toshiba Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same
WO2012070163A1 (ja) * 2010-11-22 2012-05-31 パナソニック株式会社 半導体装置及びその製造方法
US8679884B2 (en) 2011-05-02 2014-03-25 Canon Kabushiki Kaisha Methods for manufacturing semiconductor apparatus and CMOS image sensor

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724052B2 (en) * 1997-12-31 2004-04-20 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating a semiconductor device
JP2003100862A (ja) * 2001-09-21 2003-04-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2003133433A (ja) * 2001-10-25 2003-05-09 Toshiba Corp 半導体装置およびその製造方法
JP2004221246A (ja) * 2003-01-14 2004-08-05 Seiko Epson Corp 半導体装置及びその製造方法
KR100680958B1 (ko) * 2005-02-23 2007-02-09 주식회사 하이닉스반도체 피모스 트랜지스터의 제조방법
JP2011192841A (ja) 2010-03-15 2011-09-29 Toshiba Corp 半導体装置
US9343318B2 (en) * 2012-02-07 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Salicide formation using a cap layer
US9601630B2 (en) * 2012-09-25 2017-03-21 Stmicroelectronics, Inc. Transistors incorporating metal quantum dots into doped source and drain regions
US9748356B2 (en) 2012-09-25 2017-08-29 Stmicroelectronics, Inc. Threshold adjustment for quantum dot array devices with metal source and drain
US10002938B2 (en) 2013-08-20 2018-06-19 Stmicroelectronics, Inc. Atomic layer deposition of selected molecular clusters
TWI841974B (zh) * 2014-11-21 2024-05-11 日商半導體能源研究所股份有限公司 半導體裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4597824A (en) * 1983-11-11 1986-07-01 Kabushiki Kaisha Toshiba Method of producing semiconductor device
US5340760A (en) * 1986-05-26 1994-08-23 Kazuhiro Komori Method of manufacturing EEPROM memory device
US4949136A (en) 1988-06-09 1990-08-14 University Of Connecticut Submicron lightly doped field effect transistors
US5320974A (en) * 1991-07-25 1994-06-14 Matsushita Electric Industrial Co., Ltd. Method for making semiconductor transistor device by implanting punch through stoppers
JPH0653233A (ja) 1992-07-27 1994-02-25 Toshiba Corp 半導体装置の製造方法
JPH07249761A (ja) 1994-03-09 1995-09-26 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
JPH07263690A (ja) 1994-03-25 1995-10-13 Ricoh Co Ltd サリサイド構造を有する半導体装置とその製造方法
US5428240A (en) * 1994-07-07 1995-06-27 United Microelectronics Corp. Source/drain structural configuration for MOSFET integrated circuit devices
JPH08125180A (ja) * 1994-10-25 1996-05-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5668024A (en) * 1996-07-17 1997-09-16 Taiwan Semiconductor Manufacturing Company CMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation process
US5793089A (en) * 1997-01-10 1998-08-11 Advanced Micro Devices, Inc. Graded MOS transistor junction formed by aligning a sequence of implants to a selectively removable polysilicon sidewall space and oxide thermally grown thereon

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110976A (ja) * 2000-10-04 2002-04-12 Mitsubishi Electric Corp 半導体装置及び半導体装置の製造方法
US7265400B2 (en) 2003-09-19 2007-09-04 Kabushiki Kaisha Toshiba Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same
US8017510B2 (en) 2003-09-19 2011-09-13 Kabushiki Kaisha Toshiba Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same
JP2006108365A (ja) * 2004-10-05 2006-04-20 Renesas Technology Corp 半導体装置およびその製造方法
WO2012070163A1 (ja) * 2010-11-22 2012-05-31 パナソニック株式会社 半導体装置及びその製造方法
US8679884B2 (en) 2011-05-02 2014-03-25 Canon Kabushiki Kaisha Methods for manufacturing semiconductor apparatus and CMOS image sensor

Also Published As

Publication number Publication date
US6518625B1 (en) 2003-02-11
KR100300695B1 (ko) 2001-11-17
KR19990006322A (ko) 1999-01-25

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