JPH1145949A5 - - Google Patents

Info

Publication number
JPH1145949A5
JPH1145949A5 JP1997201363A JP20136397A JPH1145949A5 JP H1145949 A5 JPH1145949 A5 JP H1145949A5 JP 1997201363 A JP1997201363 A JP 1997201363A JP 20136397 A JP20136397 A JP 20136397A JP H1145949 A5 JPH1145949 A5 JP H1145949A5
Authority
JP
Japan
Prior art keywords
impurity diffusion
transistor
region
layer
diffusion region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997201363A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1145949A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9201363A priority Critical patent/JPH1145949A/ja
Priority claimed from JP9201363A external-priority patent/JPH1145949A/ja
Priority to US09/010,473 priority patent/US5886388A/en
Publication of JPH1145949A publication Critical patent/JPH1145949A/ja
Publication of JPH1145949A5 publication Critical patent/JPH1145949A5/ja
Pending legal-status Critical Current

Links

JP9201363A 1997-07-28 1997-07-28 スタティック型半導体記憶装置およびその製造方法 Pending JPH1145949A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9201363A JPH1145949A (ja) 1997-07-28 1997-07-28 スタティック型半導体記憶装置およびその製造方法
US09/010,473 US5886388A (en) 1997-07-28 1998-01-21 Static semiconductor memory device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9201363A JPH1145949A (ja) 1997-07-28 1997-07-28 スタティック型半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH1145949A JPH1145949A (ja) 1999-02-16
JPH1145949A5 true JPH1145949A5 (https=) 2005-05-19

Family

ID=16439822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9201363A Pending JPH1145949A (ja) 1997-07-28 1997-07-28 スタティック型半導体記憶装置およびその製造方法

Country Status (2)

Country Link
US (1) US5886388A (https=)
JP (1) JPH1145949A (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239491B1 (en) 1998-05-18 2001-05-29 Lsi Logic Corporation Integrated circuit structure with thin dielectric between at least local interconnect level and first metal interconnect level, and process for making same
JP4565700B2 (ja) * 1999-05-12 2010-10-20 ルネサスエレクトロニクス株式会社 半導体装置
JP2001077213A (ja) * 1999-09-08 2001-03-23 Mitsubishi Electric Corp スタティック型半導体記憶装置および半導体装置
JP3645137B2 (ja) * 1999-10-18 2005-05-11 Necエレクトロニクス株式会社 半導体記憶装置
JP4471504B2 (ja) * 2001-01-16 2010-06-02 株式会社ルネサステクノロジ 半導体記憶装置
US6589823B1 (en) 2001-02-22 2003-07-08 Advanced Micro Devices, Inc. Silicon-on-insulator (SOI)electrostatic discharge (ESD) protection device with backside contact plug
JP2002373946A (ja) * 2001-06-13 2002-12-26 Mitsubishi Electric Corp スタティック型半導体記憶装置
FR2843481B1 (fr) 2002-08-08 2005-09-16 Soisic Memoire sur substrat du type silicium sur isolant
KR100450683B1 (ko) * 2002-09-04 2004-10-01 삼성전자주식회사 Soi 기판에 형성되는 에스램 디바이스
US6762464B2 (en) * 2002-09-17 2004-07-13 Intel Corporation N-p butting connections on SOI substrates
JP3684232B2 (ja) * 2003-04-25 2005-08-17 株式会社東芝 半導体装置
US20040222422A1 (en) * 2003-05-08 2004-11-11 Wein-Town Sun CMOS inverter layout
JP2006049784A (ja) * 2003-08-28 2006-02-16 Renesas Technology Corp 半導体記憶装置及びその製造方法
WO2005096381A1 (en) * 2004-04-01 2005-10-13 Soisic Improved layout of a sram memory cell
JP2008016480A (ja) * 2006-07-03 2008-01-24 Sony Corp 半導体記憶装置及びその製造方法
CN102725841B (zh) * 2010-01-15 2016-10-05 株式会社半导体能源研究所 半导体器件
JP5588298B2 (ja) * 2010-10-14 2014-09-10 株式会社東芝 半導体装置
CN116057713A (zh) * 2020-08-06 2023-05-02 索尼半导体解决方案公司 半导体装置和电子设备
CN114792727A (zh) * 2021-01-25 2022-07-26 台湾积体电路制造股份有限公司 半导体器件及其使用方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281055A (ja) * 1985-10-04 1987-04-14 Sony Corp 半導体記憶装置
GB8700347D0 (en) * 1987-01-08 1987-02-11 Inmos Ltd Memory cell
US5194749A (en) * 1987-11-30 1993-03-16 Hitachi, Ltd. Semiconductor integrated circuit device
JP3070099B2 (ja) * 1990-12-13 2000-07-24 ソニー株式会社 スタティックram
JPH04359562A (ja) * 1991-06-06 1992-12-11 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US5206533A (en) * 1991-06-24 1993-04-27 Texas Instruments Incorporated Transistor device with resistive coupling
JPH05174580A (ja) * 1991-12-24 1993-07-13 Sony Corp スタティックランダムアクセスメモリ

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