JPH11354448A5 - - Google Patents

Info

Publication number
JPH11354448A5
JPH11354448A5 JP1998163062A JP16306298A JPH11354448A5 JP H11354448 A5 JPH11354448 A5 JP H11354448A5 JP 1998163062 A JP1998163062 A JP 1998163062A JP 16306298 A JP16306298 A JP 16306298A JP H11354448 A5 JPH11354448 A5 JP H11354448A5
Authority
JP
Japan
Prior art keywords
film
amorphous silicon
type conductivity
forming
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998163062A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11354448A (ja
JP4115590B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP16306298A priority Critical patent/JP4115590B2/ja
Priority claimed from JP16306298A external-priority patent/JP4115590B2/ja
Publication of JPH11354448A publication Critical patent/JPH11354448A/ja
Publication of JPH11354448A5 publication Critical patent/JPH11354448A5/ja
Application granted granted Critical
Publication of JP4115590B2 publication Critical patent/JP4115590B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP16306298A 1998-06-11 1998-06-11 半導体装置の作製方法 Expired - Fee Related JP4115590B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16306298A JP4115590B2 (ja) 1998-06-11 1998-06-11 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16306298A JP4115590B2 (ja) 1998-06-11 1998-06-11 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH11354448A JPH11354448A (ja) 1999-12-24
JPH11354448A5 true JPH11354448A5 (enExample) 2005-10-06
JP4115590B2 JP4115590B2 (ja) 2008-07-09

Family

ID=15766464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16306298A Expired - Fee Related JP4115590B2 (ja) 1998-06-11 1998-06-11 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4115590B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4785258B2 (ja) * 2000-03-10 2011-10-05 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US20020020840A1 (en) 2000-03-10 2002-02-21 Setsuo Nakajima Semiconductor device and manufacturing method thereof
CN100337304C (zh) * 2003-08-22 2007-09-12 友达光电股份有限公司 形成多晶硅层的方法
JP5063867B2 (ja) * 2005-04-21 2012-10-31 株式会社Ｓｕｍｃｏ Ｓｏｉ基板の製造方法
JP7581098B2 (ja) * 2021-03-19 2024-11-12 キオクシア株式会社 半導体装置の製造方法

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