JPS6161253B2 - - Google Patents

Info

Publication number
JPS6161253B2
JPS6161253B2 JP4510379A JP4510379A JPS6161253B2 JP S6161253 B2 JPS6161253 B2 JP S6161253B2 JP 4510379 A JP4510379 A JP 4510379A JP 4510379 A JP4510379 A JP 4510379A JP S6161253 B2 JPS6161253 B2 JP S6161253B2
Authority
JP
Japan
Prior art keywords
hydrofluoric acid
silicon substrate
drying
dioxide film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4510379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55138236A (en
Inventor
Motohiro Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4510379A priority Critical patent/JPS55138236A/ja
Publication of JPS55138236A publication Critical patent/JPS55138236A/ja
Publication of JPS6161253B2 publication Critical patent/JPS6161253B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP4510379A 1979-04-12 1979-04-12 Manufacture of semiconductor device Granted JPS55138236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4510379A JPS55138236A (en) 1979-04-12 1979-04-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4510379A JPS55138236A (en) 1979-04-12 1979-04-12 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55138236A JPS55138236A (en) 1980-10-28
JPS6161253B2 true JPS6161253B2 (enExample) 1986-12-24

Family

ID=12709945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4510379A Granted JPS55138236A (en) 1979-04-12 1979-04-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55138236A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2865876B2 (ja) * 1994-04-06 1999-03-08 フィッシャーヴェルケ アルツール フィッシャー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト 自動車組み付け用の特に傘のための保管装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252140A (ja) * 1986-04-25 1987-11-02 Nippon Mining Co Ltd ＩｎＰウエ−ハの洗浄方法
US5098866A (en) * 1988-12-27 1992-03-24 Texas Instruments Incorporated Method for reducing hot-electron-induced degradation of device characteristics

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2865876B2 (ja) * 1994-04-06 1999-03-08 フィッシャーヴェルケ アルツール フィッシャー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト 自動車組み付け用の特に傘のための保管装置

Also Published As

Publication number Publication date
JPS55138236A (en) 1980-10-28

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