JPH11240919A5 - - Google Patents

Info

Publication number
JPH11240919A5
JPH11240919A5 JP1998349241A JP34924198A JPH11240919A5 JP H11240919 A5 JPH11240919 A5 JP H11240919A5 JP 1998349241 A JP1998349241 A JP 1998349241A JP 34924198 A JP34924198 A JP 34924198A JP H11240919 A5 JPH11240919 A5 JP H11240919A5
Authority
JP
Japan
Prior art keywords
group
substituent
optionally substituted
polymer
bridged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998349241A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11240919A (ja
Filing date
Publication date
Priority claimed from US08/963,922 external-priority patent/US6057083A/en
Application filed filed Critical
Publication of JPH11240919A publication Critical patent/JPH11240919A/ja
Publication of JPH11240919A5 publication Critical patent/JPH11240919A5/ja
Pending legal-status Critical Current

Links

JP10349241A 1997-11-04 1998-11-04 新規なポリマ―及びフォトレジスト組成物 Pending JPH11240919A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US963922 1997-11-04
US08/963,922 US6057083A (en) 1997-11-04 1997-11-04 Polymers and photoresist compositions

Publications (2)

Publication Number Publication Date
JPH11240919A JPH11240919A (ja) 1999-09-07
JPH11240919A5 true JPH11240919A5 (enExample) 2005-10-27

Family

ID=25507904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10349241A Pending JPH11240919A (ja) 1997-11-04 1998-11-04 新規なポリマ―及びフォトレジスト組成物

Country Status (5)

Country Link
US (2) US6057083A (enExample)
EP (1) EP0915382A3 (enExample)
JP (1) JPH11240919A (enExample)
KR (1) KR19990044985A (enExample)
TW (1) TW513620B (enExample)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057083A (en) * 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
JPH11231541A (ja) * 1998-02-17 1999-08-27 Daicel Chem Ind Ltd 放射線感光材料及びそれを使用したパターン形成方法
WO2000001684A1 (en) 1998-07-03 2000-01-13 Nec Corporation (meth)acrylate derivatives bearing lactone structure, polymers, photoresist compositions and process of forming patterns with the same
KR100574574B1 (ko) 1998-08-26 2006-04-28 스미또모 가가꾸 가부시키가이샤 화학 증폭형 포지티브 내식막 조성물
JP4131062B2 (ja) * 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
KR20000047909A (ko) * 1998-12-10 2000-07-25 마티네즈 길러모 이타콘산 무수물 중합체 및 이를 함유하는 포토레지스트조성물
KR100604780B1 (ko) * 1999-07-23 2006-07-28 삼성전자주식회사 백본에 지환식 화합물과 아세탈 작용기를 가지는 감광성 폴리머와 이를 포함하는 감광성 코폴리머
US6692888B1 (en) * 1999-10-07 2004-02-17 Shipley Company, L.L.C. Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same
US6492086B1 (en) 1999-10-08 2002-12-10 Shipley Company, L.L.C. Phenolic/alicyclic copolymers and photoresists
US6783912B2 (en) 2000-02-27 2004-08-31 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
US6306554B1 (en) 2000-05-09 2001-10-23 Shipley Company, L.L.C. Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
WO2002077709A2 (en) 2001-03-22 2002-10-03 Shipley Company, L.L.C. Photoresist composition
DE10228628A1 (de) 2002-06-26 2004-01-22 Stockhausen Gmbh & Co. Kg Copolymerisate zur Vermeidung von Ablagerungen in wasserführenden Systemen, deren Herstellung und Verwendung
JP4371206B2 (ja) * 2002-09-30 2009-11-25 信越化学工業株式会社 エステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
JP4434762B2 (ja) 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
US7781141B2 (en) 2004-07-02 2010-08-24 Rohm And Haas Electronic Materials Llc Compositions and processes for immersion lithography
JP4789599B2 (ja) 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジスト組成物
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
EP1762895B1 (en) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
EP1829942B1 (en) 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
TWI358613B (en) 2006-03-10 2012-02-21 Rohm & Haas Elect Mat Compositions and processes for photolithography
KR101186689B1 (ko) 2006-10-30 2012-09-27 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 침지 리소그래피 처리용 조성물 및 방법
TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
US20080248331A1 (en) 2007-04-06 2008-10-09 Rohm And Haas Electronic Materials Llc Coating composition
KR101570986B1 (ko) 2007-11-05 2015-11-23 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 침지 리소그래피용 조성물 및 방법
EP2071400A1 (en) 2007-11-12 2009-06-17 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
EP2189846B1 (en) 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Process for photolithography applying a photoresist composition comprising a block copolymer
EP2189845B1 (en) 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP3051348A1 (en) 2008-11-19 2016-08-03 Rohm and Haas Electronic Materials LLC Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography
EP2784584A1 (en) 2008-11-19 2014-10-01 Rohm and Haas Electronic Materials LLC Compositions comprising sulfonamide material and processes for photolithography
EP2204694A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2204392A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2216683B1 (en) 2009-02-08 2018-11-14 Rohm and Haas Electronic Materials, L.L.C. Substrates coated with an antireflective composition and a photoresist
JP5746824B2 (ja) 2009-02-08 2015-07-08 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 上塗りフォトレジストと共に使用するのに好適なコーティング組成物
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
US8501383B2 (en) 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
TWI468858B (zh) 2009-06-08 2015-01-11 羅門哈斯電子材料有限公司 光微影製程
US8883407B2 (en) 2009-06-12 2014-11-11 Rohm And Haas Electronic Materials Llc Coating compositions suitable for use with an overcoated photoresist
EP2267532B1 (en) 2009-06-22 2015-08-19 Rohm and Haas Electronic Materials, L.L.C. Photoacid generators and photoresists comprising same
KR101806155B1 (ko) 2009-12-10 2017-12-07 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 콜레이트 광산 발생제 및 이를 포함하는 포토레지스트
EP2360153B1 (en) 2009-12-10 2015-04-08 Rohm and Haas Electronic Materials LLC Photoacid generators and photoresists comprising same
JP5830240B2 (ja) 2009-12-14 2015-12-09 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ スルホニル光酸発生剤およびこれを含むフォトレジスト
CN102194673B (zh) 2009-12-15 2015-08-05 罗门哈斯电子材料有限公司 光致抗蚀剂及其使用方法
KR101877360B1 (ko) 2009-12-15 2018-07-11 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 및 그의 사용방법
TWI605310B (zh) 2009-12-15 2017-11-11 羅門哈斯電子材料有限公司 光阻劑及其使用方法
EP2348360B1 (en) 2010-01-25 2017-09-27 Rohm and Haas Electronic Materials LLC Photoresist comprising nitrogen-containing compound
JP5969171B2 (ja) 2010-03-31 2016-08-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 光酸発生剤およびこれを含むフォトレジスト
JP5782283B2 (ja) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 新規のポリマーおよびフォトレジスト組成物
EP2383611A3 (en) 2010-04-27 2012-01-25 Rohm and Haas Electronic Materials LLC Photoacid generators and photoresists comprising same
IL213195A0 (en) 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
EP2428842A1 (en) 2010-09-14 2012-03-14 Rohm and Haas Electronic Materials LLC Photoresists comprising multi-amide component
JP2012113302A (ja) 2010-11-15 2012-06-14 Rohm & Haas Electronic Materials Llc 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
JP6144005B2 (ja) 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 糖成分を含む組成物およびフォトリソグラフィ方法
EP2472327A1 (en) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Photoresists and methods for use thereof
EP2472320A2 (en) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Compositions comprising base-reactive component and processes for photolithography
EP2472328B1 (en) 2010-12-31 2013-06-19 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
EP2472329B1 (en) 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
US9011591B2 (en) 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US9366964B2 (en) 2011-09-21 2016-06-14 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US9541834B2 (en) 2012-11-30 2017-01-10 Rohm And Haas Electronic Materials Llc Ionic thermal acid generators for low temperature applications
KR101785426B1 (ko) 2015-04-30 2017-10-17 롬엔드하스전자재료코리아유한회사 포토레지스트 조성물 및 방법
US11480878B2 (en) 2016-08-31 2022-10-25 Rohm And Haas Electronic Materials Korea Ltd. Monomers, polymers and photoresist compositions
CN108264605A (zh) 2016-12-30 2018-07-10 罗门哈斯电子材料韩国有限公司 单体、聚合物和光致抗蚀剂组合物
JP6730417B2 (ja) 2017-12-31 2020-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジスト組成物および方法
US11874603B2 (en) 2021-09-15 2024-01-16 Rohm And Haas Electronic Materials Korea Ltd. Photoresist composition comprising amide compound and pattern formation methods using the same
US12512430B2 (en) 2022-06-28 2025-12-30 Dupont Electronic Materials International, Llc Metallization method

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4968581A (en) * 1986-02-24 1990-11-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4810613A (en) * 1987-05-22 1989-03-07 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
DE3721741A1 (de) * 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
DE3817011A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
US5164278A (en) * 1990-03-01 1992-11-17 International Business Machines Corporation Speed enhancers for acid sensitized resists
US5252427A (en) * 1990-04-10 1993-10-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions
GB9105750D0 (en) * 1991-03-19 1991-05-01 Minnesota Mining & Mfg Speed stabilised positive-acting photoresist compositions
JPH04355761A (ja) * 1991-06-04 1992-12-09 Hitachi Chem Co Ltd ポジ型感光性樹脂組成物及びこれを用いた感光性積層体
US5250395A (en) * 1991-07-25 1993-10-05 International Business Machines Corporation Process for imaging of photoresist including treatment of the photoresist with an organometallic compound
JP3000745B2 (ja) * 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
DE4319178C2 (de) * 1992-06-10 1997-07-17 Fujitsu Ltd Resist-Zusammensetzung enthaltend ein Polymermaterial und einen Säuregenerator
JP3158710B2 (ja) * 1992-09-16 2001-04-23 日本ゼオン株式会社 化学増幅レジストパターンの形成方法
DE69322946T2 (de) * 1992-11-03 1999-08-12 International Business Machines Corp., Armonk, N.Y. Photolackzusammensetzung
EP0608983B1 (en) * 1993-01-25 1997-11-12 AT&T Corp. A process for controlled deprotection of polymers and a process for fabricating a device utilizing partially deprotected resist polymers
JP3339157B2 (ja) * 1993-05-31 2002-10-28 ソニー株式会社 感光性組成物及びパターン形成方法
JP3297199B2 (ja) * 1993-09-14 2002-07-02 株式会社東芝 レジスト組成物
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
JPH07191463A (ja) * 1993-12-27 1995-07-28 Fujitsu Ltd レジストおよびこれを使った半導体装置の製造方法
EP1248150A3 (en) * 1993-12-28 2003-11-05 Fujitsu Limited Radiation sensitive material and method for forming pattern
US5580694A (en) * 1994-06-27 1996-12-03 International Business Machines Corporation Photoresist composition with androstane and process for its use
US6060207A (en) * 1994-07-11 2000-05-09 Kabushiki Kaisha Toshiba Photosensitive material
US5607824A (en) * 1994-07-27 1997-03-04 International Business Machines Corporation Antireflective coating for microlithography
JPH0927102A (ja) * 1995-07-07 1997-01-28 Hitachi Ltd 磁気記録装置
US5693691A (en) * 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
WO1997027515A1 (fr) * 1996-01-26 1997-07-31 Nippon Zeon Co., Ltd. Composition de resist
EP0885405B1 (en) * 1996-03-07 2005-06-08 Sumitomo Bakelite Co., Ltd. Photoresist compositions comprising polycyclic polymers with acid labile pendant groups
JP3346166B2 (ja) * 1996-05-17 2002-11-18 凸版印刷株式会社 カラーフィルタ
JP3206440B2 (ja) * 1996-06-28 2001-09-10 信越化学工業株式会社 化学増幅ポジ型レジスト材料
EP0877293B1 (en) * 1997-05-09 2004-01-14 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US6054254A (en) * 1997-07-03 2000-04-25 Kabushiki Kaisha Toshiba Composition for underlying film and method of forming a pattern using the film
US6057083A (en) * 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions

Similar Documents

Publication Publication Date Title
JPH11240919A5 (enExample)
JPH1010894A5 (enExample)
TWI503353B (zh) 含具有磺胺基之矽的抗蝕下層膜形成組成物
TWI233537B (en) Photoresist compositions comprising blends of ionic and non-ionic photoacid generators
JPH09179303A5 (enExample)
JP2000298347A5 (enExample)
JP2004117688A5 (enExample)
JPH1043683A5 (enExample)
JP2004531749A5 (enExample)
KR970049038A (ko) 화학적으로 증폭된 포지티브 포토레지스트
JPH11258809A5 (enExample)
KR960022615A (ko) 감광성 내식막 조성물
JP2005509177A5 (enExample)
JP2004277303A5 (enExample)
JP2004524564A5 (enExample)
JPH11265061A5 (enExample)
JP2000231194A5 (enExample)
JP2003262952A5 (enExample)
JP2007529037A5 (enExample)
JP3082892B2 (ja) ポジ型レジスト材料
JPH0619136A (ja) 感光材料
JP2001100417A5 (enExample)
JPH0332783B2 (enExample)
JP2004078105A5 (enExample)
JPH10239846A5 (enExample)