JP2000029215A5 - - Google Patents

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Publication number
JP2000029215A5
JP2000029215A5 JP1997291498A JP29149897A JP2000029215A5 JP 2000029215 A5 JP2000029215 A5 JP 2000029215A5 JP 1997291498 A JP1997291498 A JP 1997291498A JP 29149897 A JP29149897 A JP 29149897A JP 2000029215 A5 JP2000029215 A5 JP 2000029215A5
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JP
Japan
Prior art keywords
substituted
group
unsubstituted
rings
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997291498A
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English (en)
Japanese (ja)
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JP2000029215A (ja
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Publication date
Priority claimed from US08/706,138 external-priority patent/US6090526A/en
Application filed filed Critical
Publication of JP2000029215A publication Critical patent/JP2000029215A/ja
Publication of JP2000029215A5 publication Critical patent/JP2000029215A5/ja
Pending legal-status Critical Current

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JP9291498A 1996-09-13 1997-09-16 新規なポリマー及びフォトレジスト組成物 Pending JP2000029215A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/706,138 US6090526A (en) 1996-09-13 1996-09-13 Polymers and photoresist compositions
US706138 1996-09-13

Publications (2)

Publication Number Publication Date
JP2000029215A JP2000029215A (ja) 2000-01-28
JP2000029215A5 true JP2000029215A5 (enExample) 2005-06-09

Family

ID=24836361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9291498A Pending JP2000029215A (ja) 1996-09-13 1997-09-16 新規なポリマー及びフォトレジスト組成物

Country Status (5)

Country Link
US (1) US6090526A (enExample)
EP (1) EP0829766B1 (enExample)
JP (1) JP2000029215A (enExample)
KR (1) KR19980024654A (enExample)
DE (1) DE69718974T2 (enExample)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207353B1 (en) 1997-12-10 2001-03-27 International Business Machines Corporation Resist formulation which minimizes blistering during etching
US7704668B1 (en) * 1998-08-04 2010-04-27 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods and articles of manufacture comprising same
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
KR100604780B1 (ko) * 1999-07-23 2006-07-28 삼성전자주식회사 백본에 지환식 화합물과 아세탈 작용기를 가지는 감광성 폴리머와 이를 포함하는 감광성 코폴리머
WO2001055789A2 (en) * 2000-01-25 2001-08-02 Infineon Technologies Ag Chemically amplified short wavelength resist
KR20010082831A (ko) * 2000-02-21 2001-08-31 구본준, 론 위라하디락사 액정표시장치의 제조방법
WO2002021214A2 (en) * 2000-09-08 2002-03-14 Shipley Company, L.L.C. Use of acetal/ketal polymers in photoresist compositions suitable for short wave imaging
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP4393010B2 (ja) 2001-04-10 2010-01-06 富士通マイクロエレクトロニクス株式会社 化学増幅レジスト組成物及びそれを用いたパターン形成方法
TWI230839B (en) * 2001-07-09 2005-04-11 Mitsui Chemicals Inc Positive type photosensitivity resist compositions and uses thereof
JP4498690B2 (ja) * 2002-05-30 2010-07-07 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 新規樹脂およびそれを含有するフォトレジスト組成物
JP3844069B2 (ja) 2002-07-04 2006-11-08 信越化学工業株式会社 レジスト材料及びパターン形成方法
WO2004081065A1 (ja) * 2003-03-10 2004-09-23 Mitsui Chemicals, Inc. 酸感応性共重合体およびその用途
US7892903B2 (en) * 2004-02-23 2011-02-22 Asml Netherlands B.V. Device manufacturing method and substrate comprising multiple resist layers
JP2006003861A (ja) * 2004-05-19 2006-01-05 Mitsui Chemicals Inc ポジ型感光性レジスト組成物およびその製造方法
KR101031693B1 (ko) 2004-06-18 2011-04-29 엘지디스플레이 주식회사 패턴형성용 레지스트 및 이를 이용한 패턴형성방법
EP1612604A3 (en) 2004-07-02 2006-04-05 Rohm and Haas Electronic Materials, L.L.C. Compositions and processes for immersion lithography
US7183036B2 (en) * 2004-11-12 2007-02-27 International Business Machines Corporation Low activation energy positive resist
JP4789599B2 (ja) 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジスト組成物
EP1691238A3 (en) * 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
JP4889950B2 (ja) * 2005-02-09 2012-03-07 東京応化工業株式会社 電子線またはｅｕｖ用ポジ型レジスト組成物およびレジストパターン形成方法
EP1762895B1 (en) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
JP2007133208A (ja) * 2005-11-11 2007-05-31 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターン形成方法
EP1829942B1 (en) 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
TWI485064B (zh) 2006-03-10 2015-05-21 羅門哈斯電子材料有限公司 用於光微影之組成物及製程
EP1835342A3 (en) 2006-03-14 2008-06-04 FUJIFILM Corporation Positive resist composition and pattern forming method using the same
EP1918778B1 (en) 2006-10-30 2016-08-03 Rohm and Haas Electronic Materials LLC Compositions and processes for immersion lithography
TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
CN101308329B (zh) 2007-04-06 2013-09-04 罗门哈斯电子材料有限公司 涂料组合物
TWI554841B (zh) 2007-11-05 2016-10-21 羅門哈斯電子材料有限公司 浸潤式微影組成物及製程
EP2071400A1 (en) 2007-11-12 2009-06-17 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
EP2189845B1 (en) 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2189846B1 (en) 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Process for photolithography applying a photoresist composition comprising a block copolymer
EP3051348A1 (en) 2008-11-19 2016-08-03 Rohm and Haas Electronic Materials LLC Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography
EP2784584A1 (en) 2008-11-19 2014-10-01 Rohm and Haas Electronic Materials LLC Compositions comprising sulfonamide material and processes for photolithography
EP2204392A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2204694A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2216683B1 (en) 2009-02-08 2018-11-14 Rohm and Haas Electronic Materials, L.L.C. Substrates coated with an antireflective composition and a photoresist
EP2216684B1 (en) 2009-02-08 2015-10-07 Rohm and Haas Electronic Materials LLC Method of forming a photoresist image comprising an undercoat layer
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
US8501383B2 (en) 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
JP5814516B2 (ja) 2009-06-08 2015-11-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトリソグラフィー方法
US8883407B2 (en) 2009-06-12 2014-11-11 Rohm And Haas Electronic Materials Llc Coating compositions suitable for use with an overcoated photoresist
JP5687442B2 (ja) 2009-06-22 2015-03-18 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 光酸発生剤およびこれを含むフォトレジスト
WO2011104127A1 (en) 2010-02-24 2011-09-01 Basf Se Latent acids and their use
JP5782283B2 (ja) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 新規のポリマーおよびフォトレジスト組成物
IL213195A0 (en) 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
TWI541226B (zh) 2010-11-15 2016-07-11 羅門哈斯電子材料有限公司 鹼反應性光酸產生劑及包含該光酸產生劑之光阻劑
JP5961363B2 (ja) 2010-11-15 2016-08-02 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ラクトン光酸発生剤、これを含む樹脂およびフォトレジスト
JP6144005B2 (ja) 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 糖成分を含む組成物およびフォトリソグラフィ方法
JP2012113302A (ja) 2010-11-15 2012-06-14 Rohm & Haas Electronic Materials Llc 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
EP2472320A2 (en) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Compositions comprising base-reactive component and processes for photolithography
EP2472328B1 (en) 2010-12-31 2013-06-19 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
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US9122159B2 (en) 2011-04-14 2015-09-01 Rohm And Haas Electronic Materials Llc Compositions and processes for photolithography
US9366964B2 (en) 2011-09-21 2016-06-14 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US9011591B2 (en) 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
TWI527792B (zh) 2012-06-26 2016-04-01 羅門哈斯電子材料有限公司 光酸產生劑、含該光酸產生劑之光阻劑及含該光阻劑之經塗覆物件
JP5965855B2 (ja) 2012-07-27 2016-08-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法、並びに樹脂
JP5850873B2 (ja) 2012-07-27 2016-02-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法
JP5894953B2 (ja) 2012-07-27 2016-03-30 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法
JP5913241B2 (ja) 2012-09-15 2016-04-27 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 複数の酸発生剤化合物を含むフォトレジスト
US9067909B2 (en) 2013-08-28 2015-06-30 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
US9046767B2 (en) 2013-10-25 2015-06-02 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
KR102537349B1 (ko) 2015-02-02 2023-05-26 바스프 에스이 잠재성 산 및 그의 용도
CN106094431B (zh) 2015-04-30 2020-06-26 罗门哈斯电子材料韩国有限公司 光致抗蚀剂组合物和方法
TWI646397B (zh) 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
US11448964B2 (en) 2016-05-23 2022-09-20 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
TWI683801B (zh) 2017-11-30 2020-02-01 美商羅門哈斯電子材料有限公司 兩性離子化合物及包括其之光阻
JP6730417B2 (ja) 2017-12-31 2020-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジスト組成物および方法
JP7249904B2 (ja) 2019-07-25 2023-03-31 丸善石油化学株式会社 酸分解性樹脂の製造方法
US11874603B2 (en) 2021-09-15 2024-01-16 Rohm And Haas Electronic Materials Korea Ltd. Photoresist composition comprising amide compound and pattern formation methods using the same
US12512430B2 (en) 2022-06-28 2025-12-30 Dupont Electronic Materials International, Llc Metallization method

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4968581A (en) * 1986-02-24 1990-11-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4810613A (en) * 1987-05-22 1989-03-07 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
DE3721741A1 (de) * 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
DE3817011A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
US5262281A (en) * 1990-04-10 1993-11-16 E. I. Du Pont De Nemours And Company Resist material for use in thick film resists
US5219711A (en) * 1990-04-10 1993-06-15 E. I. Du Pont De Nemours And Company Positive image formation utilizing resist material with carbazole diazonium salt acid generator
US5206317A (en) * 1990-04-10 1993-04-27 E. I. Du Pont De Nemours And Company Resist material and process for use
US5212047A (en) * 1990-04-10 1993-05-18 E. I. Du Pont De Nemours And Company Resist material and process for use
US5120633A (en) * 1990-04-10 1992-06-09 E. I. Du Pont De Nemours And Company Resist material for use in thick film resists
US5252427A (en) * 1990-04-10 1993-10-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions
US5072029A (en) * 1990-04-10 1991-12-10 E. I. Du Pont De Nemours And Company Catalyzed process for reacting carboxylic acids with vinyl ethers
EP0476865A1 (en) * 1990-08-31 1992-03-25 Wako Pure Chemical Industries Ltd Resist material and process for forming pattern using the same
US5102771A (en) * 1990-11-26 1992-04-07 Minnesota Mining And Manufacturing Company Photosensitive materials
US5085972A (en) * 1990-11-26 1992-02-04 Minnesota Mining And Manufacturing Company Alkoxyalkyl ester solubility inhibitors for phenolic resins
EP0601974B1 (de) * 1992-12-04 1997-05-28 OCG Microelectronic Materials Inc. Positiv-Photoresist mit verbesserten Prozesseigenschaften
EP0663616B1 (en) * 1993-12-28 2002-10-30 Fujitsu Limited Radiation sensitive material and method for forming pattern
ATE195590T1 (de) * 1994-06-22 2000-09-15 Ciba Sc Holding Ag Positiv-photoresist
DE69612182T3 (de) * 1996-02-09 2005-08-04 Wako Pure Chemical Industries, Ltd. Polymer und Resistmaterial
US5861231A (en) * 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component

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