DE69718974T2 - Neue Polymere und Photoresistzusammensetzungen - Google Patents
Neue Polymere und PhotoresistzusammensetzungenInfo
- Publication number
- DE69718974T2 DE69718974T2 DE69718974T DE69718974T DE69718974T2 DE 69718974 T2 DE69718974 T2 DE 69718974T2 DE 69718974 T DE69718974 T DE 69718974T DE 69718974 T DE69718974 T DE 69718974T DE 69718974 T2 DE69718974 T2 DE 69718974T2
- Authority
- DE
- Germany
- Prior art keywords
- substituted
- unsubstituted
- polymer
- photoresist
- ring members
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/706,138 US6090526A (en) | 1996-09-13 | 1996-09-13 | Polymers and photoresist compositions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69718974D1 DE69718974D1 (de) | 2003-03-20 |
| DE69718974T2 true DE69718974T2 (de) | 2003-11-06 |
Family
ID=24836361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69718974T Expired - Fee Related DE69718974T2 (de) | 1996-09-13 | 1997-09-08 | Neue Polymere und Photoresistzusammensetzungen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6090526A (enExample) |
| EP (1) | EP0829766B1 (enExample) |
| JP (1) | JP2000029215A (enExample) |
| KR (1) | KR19980024654A (enExample) |
| DE (1) | DE69718974T2 (enExample) |
Families Citing this family (72)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6207353B1 (en) | 1997-12-10 | 2001-03-27 | International Business Machines Corporation | Resist formulation which minimizes blistering during etching |
| US7704668B1 (en) * | 1998-08-04 | 2010-04-27 | Rohm And Haas Electronic Materials Llc | Photoresist compositions and methods and articles of manufacture comprising same |
| SG78412A1 (en) | 1999-03-31 | 2001-02-20 | Ciba Sc Holding Ag | Oxime derivatives and the use thereof as latent acids |
| KR100604780B1 (ko) * | 1999-07-23 | 2006-07-28 | 삼성전자주식회사 | 백본에 지환식 화합물과 아세탈 작용기를 가지는 감광성 폴리머와 이를 포함하는 감광성 코폴리머 |
| WO2001055789A2 (en) * | 2000-01-25 | 2001-08-02 | Infineon Technologies Ag | Chemically amplified short wavelength resist |
| KR20010082831A (ko) * | 2000-02-21 | 2001-08-31 | 구본준, 론 위라하디락사 | 액정표시장치의 제조방법 |
| AU2001288953A1 (en) * | 2000-09-08 | 2002-03-22 | Shipley Company, L.L.C. | Novel polymers and photoresist compositions comprising labile polymers backbonesfor short wave imaging |
| US6749987B2 (en) * | 2000-10-20 | 2004-06-15 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
| JP4393010B2 (ja) * | 2001-04-10 | 2010-01-06 | 富士通マイクロエレクトロニクス株式会社 | 化学増幅レジスト組成物及びそれを用いたパターン形成方法 |
| TWI230839B (en) * | 2001-07-09 | 2005-04-11 | Mitsui Chemicals Inc | Positive type photosensitivity resist compositions and uses thereof |
| US7244542B2 (en) * | 2002-05-30 | 2007-07-17 | Shipley Company, L.L.C. | Resins and photoresist compositions comprising same |
| JP3844069B2 (ja) | 2002-07-04 | 2006-11-08 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JPWO2004081065A1 (ja) * | 2003-03-10 | 2006-06-08 | 三井化学株式会社 | 酸感応性共重合体およびその用途 |
| US7892903B2 (en) * | 2004-02-23 | 2011-02-22 | Asml Netherlands B.V. | Device manufacturing method and substrate comprising multiple resist layers |
| JP2006003861A (ja) * | 2004-05-19 | 2006-01-05 | Mitsui Chemicals Inc | ポジ型感光性レジスト組成物およびその製造方法 |
| KR101031693B1 (ko) | 2004-06-18 | 2011-04-29 | 엘지디스플레이 주식회사 | 패턴형성용 레지스트 및 이를 이용한 패턴형성방법 |
| TWI322334B (en) | 2004-07-02 | 2010-03-21 | Rohm & Haas Elect Mat | Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein |
| US7183036B2 (en) * | 2004-11-12 | 2007-02-27 | International Business Machines Corporation | Low activation energy positive resist |
| JP4789599B2 (ja) | 2004-12-06 | 2011-10-12 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | フォトレジスト組成物 |
| EP1691238A3 (en) * | 2005-02-05 | 2009-01-21 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for use with an overcoated photoresist |
| JP4889950B2 (ja) * | 2005-02-09 | 2012-03-07 | 東京応化工業株式会社 | 電子線またはeuv用ポジ型レジスト組成物およびレジストパターン形成方法 |
| EP1762895B1 (en) | 2005-08-29 | 2016-02-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflective Hard Mask Compositions |
| JP2007133208A (ja) * | 2005-11-11 | 2007-05-31 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物およびレジストパターン形成方法 |
| EP1829942B1 (en) | 2006-02-28 | 2012-09-26 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for use with an overcoated photoresist |
| TWI485064B (zh) | 2006-03-10 | 2015-05-21 | 羅門哈斯電子材料有限公司 | 用於光微影之組成物及製程 |
| TWI475323B (zh) | 2006-03-14 | 2015-03-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
| US9244355B2 (en) | 2006-10-30 | 2016-01-26 | Rohm And Haas Electronic Materials, Llc | Compositions and processes for immersion lithography |
| TWI374478B (en) | 2007-02-13 | 2012-10-11 | Rohm & Haas Elect Mat | Electronic device manufacture |
| US20080248331A1 (en) | 2007-04-06 | 2008-10-09 | Rohm And Haas Electronic Materials Llc | Coating composition |
| CN101526737B (zh) | 2007-11-05 | 2014-02-26 | 罗门哈斯电子材料有限公司 | 浸渍平版印刷用组合物和浸渍平版印刷方法 |
| JP2009199061A (ja) | 2007-11-12 | 2009-09-03 | Rohm & Haas Electronic Materials Llc | オーバーコートされたフォトレジストと共に用いるためのコーティング組成物 |
| EP2189846B1 (en) | 2008-11-19 | 2015-04-22 | Rohm and Haas Electronic Materials LLC | Process for photolithography applying a photoresist composition comprising a block copolymer |
| EP2189845B1 (en) | 2008-11-19 | 2017-08-02 | Rohm and Haas Electronic Materials LLC | Compositions and processes for photolithography |
| EP2784584A1 (en) | 2008-11-19 | 2014-10-01 | Rohm and Haas Electronic Materials LLC | Compositions comprising sulfonamide material and processes for photolithography |
| EP2189847A3 (en) | 2008-11-19 | 2010-07-21 | Rohm and Haas Electronic Materials LLC | Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography |
| EP2204392A1 (en) | 2008-12-31 | 2010-07-07 | Rohm and Haas Electronic Materials LLC | Compositions and processes for photolithography |
| EP2204694A1 (en) | 2008-12-31 | 2010-07-07 | Rohm and Haas Electronic Materials LLC | Compositions and processes for photolithography |
| EP2216684B1 (en) | 2009-02-08 | 2015-10-07 | Rohm and Haas Electronic Materials LLC | Method of forming a photoresist image comprising an undercoat layer |
| JP5719514B2 (ja) | 2009-02-08 | 2015-05-20 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 上塗りフォトレジストと共に使用するのに好適なコーティング組成物 |
| US9244352B2 (en) | 2009-05-20 | 2016-01-26 | Rohm And Haas Electronic Materials, Llc | Coating compositions for use with an overcoated photoresist |
| US8501383B2 (en) | 2009-05-20 | 2013-08-06 | Rohm And Haas Electronic Materials Llc | Coating compositions for use with an overcoated photoresist |
| JP5814516B2 (ja) | 2009-06-08 | 2015-11-17 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | フォトリソグラフィー方法 |
| US8883407B2 (en) | 2009-06-12 | 2014-11-11 | Rohm And Haas Electronic Materials Llc | Coating compositions suitable for use with an overcoated photoresist |
| US8338077B2 (en) | 2009-06-22 | 2012-12-25 | Rohm And Haas Electronic Materials Llc | Photoacid generators and photoresists comprising same |
| CN102781911B (zh) | 2010-02-24 | 2015-07-22 | 巴斯夫欧洲公司 | 潜酸及其用途 |
| JP5782283B2 (ja) | 2010-03-31 | 2015-09-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 新規のポリマーおよびフォトレジスト組成物 |
| IL213195A0 (en) | 2010-05-31 | 2011-07-31 | Rohm & Haas Elect Mat | Photoresist compositions and emthods of forming photolithographic patterns |
| JP5961363B2 (ja) | 2010-11-15 | 2016-08-02 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | ラクトン光酸発生剤、これを含む樹脂およびフォトレジスト |
| JP6144005B2 (ja) | 2010-11-15 | 2017-06-07 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 糖成分を含む組成物およびフォトリソグラフィ方法 |
| CN102603586A (zh) | 2010-11-15 | 2012-07-25 | 罗门哈斯电子材料有限公司 | 碱反应性光酸发生剂以及包含其的光致抗蚀剂 |
| JP2012113302A (ja) | 2010-11-15 | 2012-06-14 | Rohm & Haas Electronic Materials Llc | 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法 |
| EP2472320A2 (en) | 2010-12-30 | 2012-07-04 | Rohm and Haas Electronic Materials LLC | Compositions comprising base-reactive component and processes for photolithography |
| EP2472329B1 (en) | 2010-12-31 | 2013-06-05 | Rohm and Haas Electronic Materials LLC | Coating compositions for use with an overcoated photoresist |
| EP2472328B1 (en) | 2010-12-31 | 2013-06-19 | Rohm and Haas Electronic Materials LLC | Coating compositions for use with an overcoated photoresist |
| US9122159B2 (en) | 2011-04-14 | 2015-09-01 | Rohm And Haas Electronic Materials Llc | Compositions and processes for photolithography |
| US9366964B2 (en) | 2011-09-21 | 2016-06-14 | Dow Global Technologies Llc | Compositions and antireflective coatings for photolithography |
| US9011591B2 (en) | 2011-09-21 | 2015-04-21 | Dow Global Technologies Llc | Compositions and antireflective coatings for photolithography |
| TWI527792B (zh) | 2012-06-26 | 2016-04-01 | 羅門哈斯電子材料有限公司 | 光酸產生劑、含該光酸產生劑之光阻劑及含該光阻劑之經塗覆物件 |
| JP5965855B2 (ja) | 2012-07-27 | 2016-08-10 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法、並びに樹脂 |
| JP5850873B2 (ja) * | 2012-07-27 | 2016-02-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
| JP5894953B2 (ja) | 2012-07-27 | 2016-03-30 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
| TWI619733B (zh) | 2012-09-15 | 2018-04-01 | Rohm And Haas Electronic Materials Llc | 包含多種酸產生劑化合物之光阻劑 |
| US9067909B2 (en) | 2013-08-28 | 2015-06-30 | Rohm And Haas Electronic Materials Llc | Photoacid generator, photoresist, coated substrate, and method of forming an electronic device |
| US9046767B2 (en) | 2013-10-25 | 2015-06-02 | Rohm And Haas Electronic Materials Llc | Photoacid generator, photoresist, coated substrate, and method of forming an electronic device |
| WO2016124493A1 (en) | 2015-02-02 | 2016-08-11 | Basf Se | Latent acids and their use |
| KR101785426B1 (ko) | 2015-04-30 | 2017-10-17 | 롬엔드하스전자재료코리아유한회사 | 포토레지스트 조성물 및 방법 |
| TWI646397B (zh) | 2015-10-31 | 2019-01-01 | 南韓商羅門哈斯電子材料韓國公司 | 與外塗佈光致抗蝕劑一起使用的塗料組合物 |
| US11448964B2 (en) | 2016-05-23 | 2022-09-20 | Rohm And Haas Electronic Materials Korea Ltd. | Coating compositions for use with an overcoated photoresist |
| CN109928904A (zh) | 2017-11-30 | 2019-06-25 | 罗门哈斯电子材料有限责任公司 | 两性离子化合物和包括其的光致抗蚀剂 |
| JP6730417B2 (ja) | 2017-12-31 | 2020-07-29 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | フォトレジスト組成物および方法 |
| JP7249904B2 (ja) | 2019-07-25 | 2023-03-31 | 丸善石油化学株式会社 | 酸分解性樹脂の製造方法 |
| US11874603B2 (en) | 2021-09-15 | 2024-01-16 | Rohm And Haas Electronic Materials Korea Ltd. | Photoresist composition comprising amide compound and pattern formation methods using the same |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| US4968581A (en) * | 1986-02-24 | 1990-11-06 | Hoechst Celanese Corporation | High resolution photoresist of imide containing polymers |
| US4810613A (en) * | 1987-05-22 | 1989-03-07 | Hoechst Celanese Corporation | Blocked monomer and polymers therefrom for use as photoresists |
| DE3721741A1 (de) * | 1987-07-01 | 1989-01-12 | Basf Ag | Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien |
| DE3817011A1 (de) * | 1988-05-19 | 1989-11-30 | Basf Ag | Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern |
| US5219711A (en) * | 1990-04-10 | 1993-06-15 | E. I. Du Pont De Nemours And Company | Positive image formation utilizing resist material with carbazole diazonium salt acid generator |
| US5252427A (en) * | 1990-04-10 | 1993-10-12 | E. I. Du Pont De Nemours And Company | Positive photoresist compositions |
| US5206317A (en) * | 1990-04-10 | 1993-04-27 | E. I. Du Pont De Nemours And Company | Resist material and process for use |
| US5262281A (en) * | 1990-04-10 | 1993-11-16 | E. I. Du Pont De Nemours And Company | Resist material for use in thick film resists |
| US5120633A (en) * | 1990-04-10 | 1992-06-09 | E. I. Du Pont De Nemours And Company | Resist material for use in thick film resists |
| US5072029A (en) * | 1990-04-10 | 1991-12-10 | E. I. Du Pont De Nemours And Company | Catalyzed process for reacting carboxylic acids with vinyl ethers |
| US5212047A (en) * | 1990-04-10 | 1993-05-18 | E. I. Du Pont De Nemours And Company | Resist material and process for use |
| EP0476865A1 (en) * | 1990-08-31 | 1992-03-25 | Wako Pure Chemical Industries Ltd | Resist material and process for forming pattern using the same |
| US5102771A (en) * | 1990-11-26 | 1992-04-07 | Minnesota Mining And Manufacturing Company | Photosensitive materials |
| US5085972A (en) * | 1990-11-26 | 1992-02-04 | Minnesota Mining And Manufacturing Company | Alkoxyalkyl ester solubility inhibitors for phenolic resins |
| EP0601974B1 (de) * | 1992-12-04 | 1997-05-28 | OCG Microelectronic Materials Inc. | Positiv-Photoresist mit verbesserten Prozesseigenschaften |
| EP1248150A3 (en) * | 1993-12-28 | 2003-11-05 | Fujitsu Limited | Radiation sensitive material and method for forming pattern |
| ATE195590T1 (de) * | 1994-06-22 | 2000-09-15 | Ciba Sc Holding Ag | Positiv-photoresist |
| EP0789279B2 (en) * | 1996-02-09 | 2004-12-08 | Wako Pure Chemical Industries Ltd | Polymer and resist material |
| US5861231A (en) * | 1996-06-11 | 1999-01-19 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising copolymer resin binder component |
-
1996
- 1996-09-13 US US08/706,138 patent/US6090526A/en not_active Expired - Fee Related
-
1997
- 1997-09-08 EP EP97115532A patent/EP0829766B1/en not_active Expired - Lifetime
- 1997-09-08 DE DE69718974T patent/DE69718974T2/de not_active Expired - Fee Related
- 1997-09-13 KR KR1019970047308A patent/KR19980024654A/ko not_active Ceased
- 1997-09-16 JP JP9291498A patent/JP2000029215A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0829766A2 (en) | 1998-03-18 |
| EP0829766A3 (en) | 1998-07-01 |
| US6090526A (en) | 2000-07-18 |
| KR19980024654A (ko) | 1998-07-06 |
| DE69718974D1 (de) | 2003-03-20 |
| JP2000029215A (ja) | 2000-01-28 |
| EP0829766B1 (en) | 2003-02-12 |
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|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |