JPH11233631A5 - - Google Patents

Info

Publication number
JPH11233631A5
JPH11233631A5 JP1998333111A JP33311198A JPH11233631A5 JP H11233631 A5 JPH11233631 A5 JP H11233631A5 JP 1998333111 A JP1998333111 A JP 1998333111A JP 33311198 A JP33311198 A JP 33311198A JP H11233631 A5 JPH11233631 A5 JP H11233631A5
Authority
JP
Japan
Prior art keywords
forming
film
interlayer insulating
glue
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998333111A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11233631A (ja
JP4027519B2 (ja
Filing date
Publication date
Priority claimed from KR1019970062866A external-priority patent/KR100273989B1/ko
Application filed filed Critical
Publication of JPH11233631A publication Critical patent/JPH11233631A/ja
Publication of JPH11233631A5 publication Critical patent/JPH11233631A5/ja
Application granted granted Critical
Publication of JP4027519B2 publication Critical patent/JP4027519B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP33311198A 1997-11-25 1998-11-24 半導体装置のコンタクト形成方法 Expired - Fee Related JP4027519B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019970062866A KR100273989B1 (ko) 1997-11-25 1997-11-25 반도체장치의콘택형성방법
KR97-62866 1997-11-25

Publications (3)

Publication Number Publication Date
JPH11233631A JPH11233631A (ja) 1999-08-27
JPH11233631A5 true JPH11233631A5 (cg-RX-API-DMAC7.html) 2004-08-12
JP4027519B2 JP4027519B2 (ja) 2007-12-26

Family

ID=19525601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33311198A Expired - Fee Related JP4027519B2 (ja) 1997-11-25 1998-11-24 半導体装置のコンタクト形成方法

Country Status (4)

Country Link
US (1) US6140223A (cg-RX-API-DMAC7.html)
JP (1) JP4027519B2 (cg-RX-API-DMAC7.html)
KR (1) KR100273989B1 (cg-RX-API-DMAC7.html)
TW (1) TW396532B (cg-RX-API-DMAC7.html)

Families Citing this family (29)

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US6475912B1 (en) * 1998-06-01 2002-11-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield
KR100331545B1 (ko) 1998-07-22 2002-04-06 윤종용 다단계 화학 기상 증착 방법에 의한 다층 질화티타늄막 형성방법및 이를 이용한 반도체 소자의 제조방법
TW426953B (en) * 1999-01-22 2001-03-21 United Microelectronics Corp Method of producing metal plug
US6316353B1 (en) * 1999-02-18 2001-11-13 Micron Technology, Inc. Method of forming conductive connections
US6610151B1 (en) 1999-10-02 2003-08-26 Uri Cohen Seed layers for interconnects and methods and apparatus for their fabrication
US7105434B2 (en) 1999-10-02 2006-09-12 Uri Cohen Advanced seed layery for metallic interconnects
US6569751B1 (en) * 2000-07-17 2003-05-27 Lsi Logic Corporation Low via resistance system
KR100499557B1 (ko) * 2001-06-11 2005-07-07 주식회사 하이닉스반도체 반도체소자의 배선 형성방법
US20020192948A1 (en) * 2001-06-15 2002-12-19 Applied Materials, Inc. Integrated barrier layer structure for copper contact level metallization
KR100685622B1 (ko) * 2001-12-17 2007-02-22 매그나칩 반도체 유한회사 반도체 소자의 콘택 플러그 형성 방법
KR100440261B1 (ko) * 2001-12-22 2004-07-15 주식회사 하이닉스반도체 반도체 소자의 금속 배선 형성 방법
JP2003332426A (ja) 2002-05-17 2003-11-21 Renesas Technology Corp 半導体装置の製造方法および半導体装置
KR20040038147A (ko) * 2002-10-31 2004-05-08 주식회사 하이닉스반도체 반도체 소자의 배리어 형성방법
US20040175926A1 (en) * 2003-03-07 2004-09-09 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having a barrier-lined opening
KR100555514B1 (ko) * 2003-08-22 2006-03-03 삼성전자주식회사 저 저항 텅스텐 배선을 갖는 반도체 메모리 소자 및 그제조방법
US6821886B1 (en) 2003-09-05 2004-11-23 Chartered Semiconductor Manufacturing Ltd. IMP TiN barrier metal process
US20050112876A1 (en) * 2003-11-26 2005-05-26 Chih-Ta Wu Method to form a robust TiCI4 based CVD TiN film
KR100642763B1 (ko) * 2005-09-06 2006-11-10 삼성전자주식회사 반도체 소자의 ＴｉＮ 막 구조, 그 제조 방법, ＴｉＮ 막구조를 채용하는 반도체 소자 및 그 제조방법
KR100818711B1 (ko) * 2006-12-07 2008-04-01 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법
US7833893B2 (en) * 2007-07-10 2010-11-16 International Business Machines Corporation Method for forming conductive structures
US7727882B1 (en) * 2007-12-17 2010-06-01 Novellus Systems, Inc. Compositionally graded titanium nitride film for diffusion barrier applications
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
CN104538347A (zh) * 2014-12-31 2015-04-22 上海华虹宏力半导体制造有限公司 接触孔的工艺方法
JP2018107227A (ja) * 2016-12-26 2018-07-05 ソニーセミコンダクタソリューションズ株式会社 半導体装置、半導体装置の製造方法、及び、固体撮像素子
CN111540828A (zh) * 2020-03-23 2020-08-14 江苏时代全芯存储科技股份有限公司 相变存储器的形成方法
CN112542435A (zh) * 2020-12-04 2021-03-23 上海擎茂微电子科技有限公司 一种防止表面金属层脱焊的半导体装置及其制造方法
CN113035777B (zh) * 2021-04-28 2023-04-28 上海华虹宏力半导体制造有限公司 一种tsv孔的cvd填充方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970001883B1 (ko) * 1992-12-30 1997-02-18 삼성전자 주식회사 반도체장치 및 그 제조방법
US5571751A (en) * 1994-05-09 1996-11-05 National Semiconductor Corporation Interconnect structures for integrated circuits
KR100220935B1 (ko) * 1995-12-15 1999-09-15 김영환 메탈 콘택 형성방법
KR100225946B1 (ko) * 1996-06-27 1999-10-15 김영환 반도체 소자의 금속 배선 형성방법
US5970374A (en) * 1996-10-18 1999-10-19 Chartered Semiconductor Manufacturing Ltd. Method for forming contacts and vias with improved barrier metal step-coverage
US5994181A (en) * 1997-05-19 1999-11-30 United Microelectronics Corp. Method for forming a DRAM cell electrode
US5895267A (en) * 1997-07-09 1999-04-20 Lsi Logic Corporation Method to obtain a low resistivity and conformity chemical vapor deposition titanium film
US5913145A (en) * 1997-08-28 1999-06-15 Texas Instruments Incorporated Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures
US5972179A (en) * 1997-09-30 1999-10-26 Lucent Technologies Inc. Silicon IC contacts using composite TiN barrier layer

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