JPH11154701A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH11154701A
JPH11154701A JP9320850A JP32085097A JPH11154701A JP H11154701 A JPH11154701 A JP H11154701A JP 9320850 A JP9320850 A JP 9320850A JP 32085097 A JP32085097 A JP 32085097A JP H11154701 A JPH11154701 A JP H11154701A
Authority
JP
Japan
Prior art keywords
conductive layer
interlayer insulating
insulating film
contact hole
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9320850A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11154701A5 (enExample
Inventor
Tomoharu Mametani
智治 豆谷
Takahiro Nagai
享浩 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9320850A priority Critical patent/JPH11154701A/ja
Priority to TW087103394A priority patent/TW366519B/zh
Priority to DE19813741A priority patent/DE19813741B4/de
Priority to US09/063,414 priority patent/US6175156B1/en
Priority to KR1019980015909A priority patent/KR100268629B1/ko
Priority to CNB981093957A priority patent/CN1149671C/zh
Publication of JPH11154701A publication Critical patent/JPH11154701A/ja
Priority to HK99104174.2A priority patent/HK1019118B/xx
Publication of JPH11154701A5 publication Critical patent/JPH11154701A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP9320850A 1997-11-21 1997-11-21 半導体装置 Pending JPH11154701A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP9320850A JPH11154701A (ja) 1997-11-21 1997-11-21 半導体装置
TW087103394A TW366519B (en) 1997-11-21 1998-03-09 Semiconductor device
DE19813741A DE19813741B4 (de) 1997-11-21 1998-03-27 Halbleitervorrichtung mit einer oberen und einer unteren Leitungsschicht
US09/063,414 US6175156B1 (en) 1997-11-21 1998-04-21 Semiconductor device with improved interconnection
KR1019980015909A KR100268629B1 (ko) 1997-11-21 1998-05-04 반도체장치
CNB981093957A CN1149671C (zh) 1997-11-21 1998-06-02 半导体器件
HK99104174.2A HK1019118B (en) 1997-11-21 1999-09-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9320850A JPH11154701A (ja) 1997-11-21 1997-11-21 半導体装置

Publications (2)

Publication Number Publication Date
JPH11154701A true JPH11154701A (ja) 1999-06-08
JPH11154701A5 JPH11154701A5 (enExample) 2004-09-16

Family

ID=18125952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9320850A Pending JPH11154701A (ja) 1997-11-21 1997-11-21 半導体装置

Country Status (6)

Country Link
US (1) US6175156B1 (enExample)
JP (1) JPH11154701A (enExample)
KR (1) KR100268629B1 (enExample)
CN (1) CN1149671C (enExample)
DE (1) DE19813741B4 (enExample)
TW (1) TW366519B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6545359B1 (en) 1998-12-18 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Wiring line and manufacture process thereof, and semiconductor device and manufacturing process thereof
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
JP2003031657A (ja) * 2001-07-18 2003-01-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
CN100342526C (zh) * 2003-08-22 2007-10-10 全懋精密科技股份有限公司 有电性连接垫金属保护层的半导体封装基板结构及其制法
JP2005252027A (ja) * 2004-03-04 2005-09-15 Nec Electronics Corp 多層配線構造の半導体装置
JP2008060532A (ja) * 2006-08-04 2008-03-13 Seiko Epson Corp 半導体装置
US8264077B2 (en) * 2008-12-29 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Backside metal of redistribution line with silicide layer on through-silicon via of semiconductor chips

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834686A (enExample) * 1971-09-09 1973-05-21
US4648937A (en) * 1985-10-30 1987-03-10 International Business Machines Corporation Method of preventing asymmetric etching of lines in sub-micrometer range sidewall images transfer
KR900003618B1 (ko) * 1986-05-30 1990-05-26 후지쓰가부시끼가이샤 반도체장치 및 그 제조방법
JP2546297B2 (ja) * 1987-11-02 1996-10-23 日本電気株式会社 半導体記憶装置
US5027185A (en) * 1988-06-06 1991-06-25 Industrial Technology Research Institute Polycide gate FET with salicide
JPH02222148A (ja) * 1989-02-22 1990-09-04 Yamaha Corp 半導体装置
DE69123175T2 (de) * 1990-05-31 1997-04-03 Canon Kk Verfahren zur Verdrahtung einer Halbleiterschaltung
JPH06326106A (ja) * 1993-03-18 1994-11-25 Sony Corp ダミーパターンの形成方法
JP2955459B2 (ja) * 1993-12-20 1999-10-04 株式会社東芝 半導体装置の製造方法
JPH08293523A (ja) * 1995-02-21 1996-11-05 Seiko Epson Corp 半導体装置およびその製造方法
US6015326A (en) * 1996-09-03 2000-01-18 Advanced Vision Technologies,Inc. Fabrication process for electron field-emission display

Also Published As

Publication number Publication date
DE19813741B4 (de) 2005-09-22
DE19813741A1 (de) 1999-06-02
TW366519B (en) 1999-08-11
CN1149671C (zh) 2004-05-12
CN1218291A (zh) 1999-06-02
US6175156B1 (en) 2001-01-16
HK1019118A1 (en) 2000-01-21
KR19990044725A (ko) 1999-06-25
KR100268629B1 (ko) 2000-10-16

Similar Documents

Publication Publication Date Title
JP3219909B2 (ja) 半導体装置の製造方法
JPH04174541A (ja) 半導体集積回路及びその製造方法
KR960019784A (ko) 반도체장치 및 그의 제조방법
US6060765A (en) Semiconductor device and a method of manufacturing the same
JPH11195704A5 (enExample)
JPH11154701A (ja) 半導体装置
KR970063592A (ko) 다층 패드를 구비하는 반도체장치 및 그 제조방법
JPH11154701A5 (enExample)
JP3327244B2 (ja) 半導体装置
JP3351177B2 (ja) 接続孔を形成する工程を有する配線構造の形成方法
JP3270863B2 (ja) 半導体装置
JPH0669207A (ja) 半導体装置
JPH11186386A (ja) 半導体装置およびその製造方法
JPH05226475A (ja) 半導体装置の製造方法
JPH0955476A (ja) 半導体装置
JPH11111921A (ja) 半導体装置
JPH02111052A (ja) 多層配線形成法
JPH03116852A (ja) 半導体装置
JPH0536850A (ja) 薄膜回路
JPH05343531A (ja) 半導体装置及びその製造方法
JP2004165285A (ja) 配線構造及びその形成方法
JPH09116013A (ja) 半導体装置およびその製造方法
JPH05136124A (ja) 半導体装置
JPH09213813A (ja) 半導体装置及び半導体装置製造方法
KR20010060538A (ko) 반도체 소자의 제조방법

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040506

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040608

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051018

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051128

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070320