JPH1070272A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH1070272A
JPH1070272A JP9183142A JP18314297A JPH1070272A JP H1070272 A JPH1070272 A JP H1070272A JP 9183142 A JP9183142 A JP 9183142A JP 18314297 A JP18314297 A JP 18314297A JP H1070272 A JPH1070272 A JP H1070272A
Authority
JP
Japan
Prior art keywords
substrate
threshold voltage
ions
active region
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9183142A
Other languages
English (en)
Japanese (ja)
Inventor
Saiko Kin
載 甲 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of JPH1070272A publication Critical patent/JPH1070272A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP9183142A 1996-06-29 1997-06-24 半導体装置及びその製造方法 Pending JPH1070272A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019960026296A KR100233558B1 (ko) 1996-06-29 1996-06-29 반도체 소자의 제조방법
KR1996P26296 1996-06-29

Publications (1)

Publication Number Publication Date
JPH1070272A true JPH1070272A (ja) 1998-03-10

Family

ID=19465048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9183142A Pending JPH1070272A (ja) 1996-06-29 1997-06-24 半導体装置及びその製造方法

Country Status (6)

Country Link
JP (1) JPH1070272A (zh)
KR (1) KR100233558B1 (zh)
CN (1) CN1136613C (zh)
DE (1) DE19727491A1 (zh)
GB (1) GB2314973B (zh)
TW (1) TW416113B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007523481A (ja) * 2004-02-17 2007-08-16 シリコン・スペース・テクノロジー・コーポレイション 埋め込みガードリング及び耐放射線性分離構造並びにその製造方法
WO2007108104A1 (ja) * 2006-03-20 2007-09-27 Fujitsu Limited 半導体装置及びその製造方法
JP2009267027A (ja) * 2008-04-24 2009-11-12 Seiko Epson Corp 半導体装置及びその製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1949425A4 (en) 2005-10-14 2010-08-18 Silicon Space Technology Corp RADIATION-HARDENED INSULATION STRUCTURES AND MANUFACTURING METHOD
JP4288355B2 (ja) * 2006-01-31 2009-07-01 国立大学法人北陸先端科学技術大学院大学 三値論理関数回路
US10038058B2 (en) 2016-05-07 2018-07-31 Silicon Space Technology Corporation FinFET device structure and method for forming same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2084794B (en) * 1980-10-03 1984-07-25 Philips Electronic Associated Methods of manufacturing insulated gate field effect transistors
JPH0693494B2 (ja) * 1984-03-16 1994-11-16 株式会社日立製作所 半導体集積回路装置の製造方法
JPS61292358A (ja) * 1985-06-19 1986-12-23 Fujitsu Ltd Ｍｉｓ型電界効果トランジスタの製造方法
JPS62200767A (ja) * 1986-02-28 1987-09-04 Toshiba Corp Ｍｏｓ型半導体装置
JPS6425438A (en) * 1987-07-21 1989-01-27 Sony Corp Manufacture of semiconductor device
JPH0235778A (ja) * 1988-07-26 1990-02-06 Seiko Epson Corp 半導体装置
US5525823A (en) * 1992-05-08 1996-06-11 Sgs-Thomson Microelectronics, Inc. Manufacture of CMOS devices
US5396096A (en) * 1992-10-07 1995-03-07 Matsushita Electric Industrial Co., Ltd. Semiconductor device and manufacturing method thereof
US5432107A (en) * 1992-11-04 1995-07-11 Matsushita Electric Industrial Co., Ltd. Semiconductor fabricating method forming channel stopper with diagonally implanted ions
JPH07135317A (ja) * 1993-04-22 1995-05-23 Texas Instr Inc <Ti> 自己整合型シリサイドゲート

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007523481A (ja) * 2004-02-17 2007-08-16 シリコン・スペース・テクノロジー・コーポレイション 埋め込みガードリング及び耐放射線性分離構造並びにその製造方法
WO2007108104A1 (ja) * 2006-03-20 2007-09-27 Fujitsu Limited 半導体装置及びその製造方法
JP2009267027A (ja) * 2008-04-24 2009-11-12 Seiko Epson Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
GB2314973B (en) 2001-09-19
DE19727491A1 (de) 1998-01-02
GB9713545D0 (en) 1997-09-03
CN1173739A (zh) 1998-02-18
KR100233558B1 (ko) 1999-12-01
KR980006490A (ko) 1998-03-30
GB2314973A (en) 1998-01-14
CN1136613C (zh) 2004-01-28
TW416113B (en) 2000-12-21

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