CN1173739A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN1173739A CN1173739A CN97113871A CN97113871A CN1173739A CN 1173739 A CN1173739 A CN 1173739A CN 97113871 A CN97113871 A CN 97113871A CN 97113871 A CN97113871 A CN 97113871A CN 1173739 A CN1173739 A CN 1173739A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- substrate
- threshold voltage
- semiconductor device
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000012535 impurity Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims description 18
- 238000009413 insulation Methods 0.000 claims description 15
- 239000012528 membrane Substances 0.000 claims description 14
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR26296/1996 | 1996-06-29 | ||
KR26296/96 | 1996-06-29 | ||
KR1019960026296A KR100233558B1 (ko) | 1996-06-29 | 1996-06-29 | 반도체 소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1173739A true CN1173739A (zh) | 1998-02-18 |
CN1136613C CN1136613C (zh) | 2004-01-28 |
Family
ID=19465048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB971138710A Expired - Fee Related CN1136613C (zh) | 1996-06-29 | 1997-06-28 | 半导体装置及其制造方法 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH1070272A (zh) |
KR (1) | KR100233558B1 (zh) |
CN (1) | CN1136613C (zh) |
DE (1) | DE19727491A1 (zh) |
GB (1) | GB2314973B (zh) |
TW (1) | TW416113B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101395801B (zh) * | 2006-01-31 | 2011-05-18 | 国立大学法人北陆先端科学技术大学院大学 | 三值逻辑函数电路 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7304354B2 (en) | 2004-02-17 | 2007-12-04 | Silicon Space Technology Corp. | Buried guard ring and radiation hardened isolation structures and fabrication methods |
WO2007061531A2 (en) | 2005-10-14 | 2007-05-31 | Silicon Space Technology Corporation | Radiation hardened isolation structures and fabrication methods |
WO2007108104A1 (ja) * | 2006-03-20 | 2007-09-27 | Fujitsu Limited | 半導体装置及びその製造方法 |
JP2009267027A (ja) * | 2008-04-24 | 2009-11-12 | Seiko Epson Corp | 半導体装置及びその製造方法 |
US10038058B2 (en) | 2016-05-07 | 2018-07-31 | Silicon Space Technology Corporation | FinFET device structure and method for forming same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2084794B (en) * | 1980-10-03 | 1984-07-25 | Philips Electronic Associated | Methods of manufacturing insulated gate field effect transistors |
JPH0693494B2 (ja) * | 1984-03-16 | 1994-11-16 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
JPS61292358A (ja) * | 1985-06-19 | 1986-12-23 | Fujitsu Ltd | Mis型電界効果トランジスタの製造方法 |
JPS62200767A (ja) * | 1986-02-28 | 1987-09-04 | Toshiba Corp | Mos型半導体装置 |
JPS6425438A (en) * | 1987-07-21 | 1989-01-27 | Sony Corp | Manufacture of semiconductor device |
JPH0235778A (ja) * | 1988-07-26 | 1990-02-06 | Seiko Epson Corp | 半導体装置 |
US5525823A (en) * | 1992-05-08 | 1996-06-11 | Sgs-Thomson Microelectronics, Inc. | Manufacture of CMOS devices |
US5396096A (en) * | 1992-10-07 | 1995-03-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and manufacturing method thereof |
US5432107A (en) * | 1992-11-04 | 1995-07-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor fabricating method forming channel stopper with diagonally implanted ions |
JPH07135317A (ja) * | 1993-04-22 | 1995-05-23 | Texas Instr Inc <Ti> | 自己整合型シリサイドゲート |
-
1996
- 1996-06-29 KR KR1019960026296A patent/KR100233558B1/ko not_active IP Right Cessation
-
1997
- 1997-06-17 TW TW086108423A patent/TW416113B/zh not_active IP Right Cessation
- 1997-06-24 JP JP9183142A patent/JPH1070272A/ja active Pending
- 1997-06-26 GB GB9713545A patent/GB2314973B/en not_active Expired - Fee Related
- 1997-06-27 DE DE19727491A patent/DE19727491A1/de not_active Ceased
- 1997-06-28 CN CNB971138710A patent/CN1136613C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101395801B (zh) * | 2006-01-31 | 2011-05-18 | 国立大学法人北陆先端科学技术大学院大学 | 三值逻辑函数电路 |
Also Published As
Publication number | Publication date |
---|---|
KR980006490A (ko) | 1998-03-30 |
KR100233558B1 (ko) | 1999-12-01 |
TW416113B (en) | 2000-12-21 |
GB2314973B (en) | 2001-09-19 |
CN1136613C (zh) | 2004-01-28 |
GB2314973A (en) | 1998-01-14 |
GB9713545D0 (en) | 1997-09-03 |
JPH1070272A (ja) | 1998-03-10 |
DE19727491A1 (de) | 1998-01-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: HYNIX SEMICONDUCTOR INC. Free format text: FORMER NAME OR ADDRESS: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Gyeonggi Do, South Korea Patentee after: Hairyoksa Semiconductor Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Hyundai Electronics Industries Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: MAGNACHIP CO., LTD. Free format text: FORMER OWNER: HYNIX SEMICONDUCTOR INC. Effective date: 20070525 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20070525 Address after: North Chungcheong Province Patentee after: Magnachip Semiconductor Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Hairyoksa Semiconductor Co., Ltd. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040128 |