JPH10335452A5 - - Google Patents

Info

Publication number
JPH10335452A5
JPH10335452A5 JP1997138213A JP13821397A JPH10335452A5 JP H10335452 A5 JPH10335452 A5 JP H10335452A5 JP 1997138213 A JP1997138213 A JP 1997138213A JP 13821397 A JP13821397 A JP 13821397A JP H10335452 A5 JPH10335452 A5 JP H10335452A5
Authority
JP
Japan
Prior art keywords
forming
contact hole
treatment
oxygen plasma
hole according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997138213A
Other languages
English (en)
Japanese (ja)
Other versions
JP4663038B2 (ja
JPH10335452A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP13821397A priority Critical patent/JP4663038B2/ja
Priority claimed from JP13821397A external-priority patent/JP4663038B2/ja
Priority to US08/982,079 priority patent/US5963826A/en
Priority to TW087101031A priority patent/TW387095B/zh
Priority to KR1019980002752A priority patent/KR19980086488A/ko
Publication of JPH10335452A publication Critical patent/JPH10335452A/ja
Publication of JPH10335452A5 publication Critical patent/JPH10335452A5/ja
Application granted granted Critical
Publication of JP4663038B2 publication Critical patent/JP4663038B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP13821397A 1997-05-28 1997-05-28 コンタクトホールの形成方法 Expired - Lifetime JP4663038B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP13821397A JP4663038B2 (ja) 1997-05-28 1997-05-28 コンタクトホールの形成方法
US08/982,079 US5963826A (en) 1997-05-28 1997-12-01 Method of forming contact hole and multilayered lines structure
TW087101031A TW387095B (en) 1997-05-28 1998-01-26 Method for forming a contact hole and a multi-layer circuit structure
KR1019980002752A KR19980086488A (ko) 1997-05-28 1998-02-02 콘택트홀 형성 방법 및 다층 배선 구조물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13821397A JP4663038B2 (ja) 1997-05-28 1997-05-28 コンタクトホールの形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007317477A Division JP4747157B2 (ja) 2007-12-07 2007-12-07 コンタクトホールの形成方法

Publications (3)

Publication Number Publication Date
JPH10335452A JPH10335452A (ja) 1998-12-18
JPH10335452A5 true JPH10335452A5 (enExample) 2004-12-24
JP4663038B2 JP4663038B2 (ja) 2011-03-30

Family

ID=15216734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13821397A Expired - Lifetime JP4663038B2 (ja) 1997-05-28 1997-05-28 コンタクトホールの形成方法

Country Status (4)

Country Link
US (1) US5963826A (enExample)
JP (1) JP4663038B2 (enExample)
KR (1) KR19980086488A (enExample)
TW (1) TW387095B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008540A (en) * 1997-05-28 1999-12-28 Texas Instruments Incorporated Integrated circuit dielectric and method
JPH1145779A (ja) * 1997-07-25 1999-02-16 Tdk Corp 有機ｅｌ素子の製造方法および装置
US7067861B1 (en) * 1998-11-25 2006-06-27 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
US6303972B1 (en) * 1998-11-25 2001-10-16 Micron Technology, Inc. Device including a conductive layer protected against oxidation
US6492242B1 (en) * 2000-07-03 2002-12-10 Chartered Semiconductor Manufacturing Ltd. Method of forming of high K metallic dielectric layer
KR100556346B1 (ko) * 2001-12-28 2006-03-03 엘지.필립스 엘시디 주식회사 금속 배선 형성방법
KR100518228B1 (ko) * 2003-05-21 2005-10-04 주식회사 하이닉스반도체 반도체 소자의 제조방법
CN100362413C (zh) * 2004-09-29 2008-01-16 财团法人工业技术研究院 一种制作电子装置的方法
JP4604743B2 (ja) * 2005-02-01 2011-01-05 セイコーエプソン株式会社 機能性基板の製造方法、機能性基板、微細パターンの形成方法、導電膜配線、電子光学装置および電子機器
TWI310026B (en) * 2006-07-31 2009-05-21 Ether Precision Inc The molding die of molding glasses and its recycling method
JP5303994B2 (ja) * 2008-03-31 2013-10-02 東亞合成株式会社 エッチング方法、及び、導電性高分子を有する基板
JP2012033689A (ja) * 2010-07-30 2012-02-16 Sumitomo Electric Device Innovations Inc 半導体装置の製造方法
JP2012033688A (ja) * 2010-07-30 2012-02-16 Sumitomo Electric Ind Ltd 半導体装置の製造方法
WO2018230377A1 (ja) * 2017-06-14 2018-12-20 東京エレクトロン株式会社 基板処理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3851161A (en) * 1973-05-07 1974-11-26 Burroughs Corp Continuity network testing and fault isolating
JPH01152648A (ja) * 1987-12-09 1989-06-15 Matsushita Electron Corp 半導体装置
US5236551A (en) * 1990-05-10 1993-08-17 Microelectronics And Computer Technology Corporation Rework of polymeric dielectric electrical interconnect by laser photoablation
JPH04253342A (ja) * 1991-01-29 1992-09-09 Oki Electric Ind Co Ltd 薄膜トランジスタアレイ基板
US5427962A (en) * 1991-11-15 1995-06-27 Casio Computer Co., Ltd. Method of making a thin film transistor
US5485019A (en) * 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
KR960012259B1 (ko) * 1993-03-13 1996-09-18 삼성전자 주식회사 반도체 장치의 제조방법
US5472913A (en) * 1994-08-05 1995-12-05 Texas Instruments Incorporated Method of fabricating porous dielectric material with a passivation layer for electronics applications
JPH0936407A (ja) * 1995-07-24 1997-02-07 Sanyo Electric Co Ltd 太陽電池
JPH10239709A (ja) * 1997-03-03 1998-09-11 Hitachi Ltd 液晶表示装置およびその製造方法

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