TW387095B - Method for forming a contact hole and a multi-layer circuit structure - Google Patents
Method for forming a contact hole and a multi-layer circuit structure Download PDFInfo
- Publication number
- TW387095B TW387095B TW087101031A TW87101031A TW387095B TW 387095 B TW387095 B TW 387095B TW 087101031 A TW087101031 A TW 087101031A TW 87101031 A TW87101031 A TW 87101031A TW 387095 B TW387095 B TW 387095B
- Authority
- TW
- Taiwan
- Prior art keywords
- contact hole
- conductive film
- forming
- electrode wiring
- treatment
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 230000001590 oxidative effect Effects 0.000 claims abstract description 8
- 238000011282 treatment Methods 0.000 claims description 107
- 239000001301 oxygen Substances 0.000 claims description 77
- 229910052760 oxygen Inorganic materials 0.000 claims description 77
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 75
- 230000003647 oxidation Effects 0.000 claims description 69
- 238000007254 oxidation reaction Methods 0.000 claims description 69
- 239000000463 material Substances 0.000 claims description 35
- 238000009832 plasma treatment Methods 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 150000004767 nitrides Chemical group 0.000 claims 1
- 238000012856 packing Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 description 179
- 239000010410 layer Substances 0.000 description 21
- 238000001039 wet etching Methods 0.000 description 21
- 238000005530 etching Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 15
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 239000002344 surface layer Substances 0.000 description 9
- 230000002079 cooperative effect Effects 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 230000036760 body temperature Effects 0.000 description 3
- 239000012286 potassium permanganate Substances 0.000 description 3
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OHMHBGPWCHTMQE-UHFFFAOYSA-N 2,2-dichloro-1,1,1-trifluoroethane Chemical compound FC(F)(F)C(Cl)Cl OHMHBGPWCHTMQE-UHFFFAOYSA-N 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 239000001166 ammonium sulphate Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QLULGSLAHXLKSR-UHFFFAOYSA-N azane;phosphane Chemical compound N.P QLULGSLAHXLKSR-UHFFFAOYSA-N 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 208000029632 chronic intestinal failure Diseases 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009420 retrofitting Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13821397A JP4663038B2 (ja) | 1997-05-28 | 1997-05-28 | コンタクトホールの形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW387095B true TW387095B (en) | 2000-04-11 |
Family
ID=15216734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087101031A TW387095B (en) | 1997-05-28 | 1998-01-26 | Method for forming a contact hole and a multi-layer circuit structure |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5963826A (enExample) |
| JP (1) | JP4663038B2 (enExample) |
| KR (1) | KR19980086488A (enExample) |
| TW (1) | TW387095B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6008540A (en) * | 1997-05-28 | 1999-12-28 | Texas Instruments Incorporated | Integrated circuit dielectric and method |
| JPH1145779A (ja) * | 1997-07-25 | 1999-02-16 | Tdk Corp | 有機ｅｌ素子の製造方法および装置 |
| US7067861B1 (en) * | 1998-11-25 | 2006-06-27 | Micron Technology, Inc. | Device and method for protecting against oxidation of a conductive layer in said device |
| US6303972B1 (en) * | 1998-11-25 | 2001-10-16 | Micron Technology, Inc. | Device including a conductive layer protected against oxidation |
| US6492242B1 (en) * | 2000-07-03 | 2002-12-10 | Chartered Semiconductor Manufacturing Ltd. | Method of forming of high K metallic dielectric layer |
| KR100556346B1 (ko) * | 2001-12-28 | 2006-03-03 | 엘지.필립스 엘시디 주식회사 | 금속 배선 형성방법 |
| KR100518228B1 (ko) * | 2003-05-21 | 2005-10-04 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| CN100362413C (zh) * | 2004-09-29 | 2008-01-16 | 财团法人工业技术研究院 | 一种制作电子装置的方法 |
| JP4604743B2 (ja) * | 2005-02-01 | 2011-01-05 | セイコーエプソン株式会社 | 機能性基板の製造方法、機能性基板、微細パターンの形成方法、導電膜配線、電子光学装置および電子機器 |
| TWI310026B (en) * | 2006-07-31 | 2009-05-21 | Ether Precision Inc | The molding die of molding glasses and its recycling method |
| JP5303994B2 (ja) * | 2008-03-31 | 2013-10-02 | 東亞合成株式会社 | エッチング方法、及び、導電性高分子を有する基板 |
| JP2012033689A (ja) * | 2010-07-30 | 2012-02-16 | Sumitomo Electric Device Innovations Inc | 半導体装置の製造方法 |
| JP2012033688A (ja) * | 2010-07-30 | 2012-02-16 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
| WO2018230377A1 (ja) * | 2017-06-14 | 2018-12-20 | 東京エレクトロン株式会社 | 基板処理方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3851161A (en) * | 1973-05-07 | 1974-11-26 | Burroughs Corp | Continuity network testing and fault isolating |
| JPH01152648A (ja) * | 1987-12-09 | 1989-06-15 | Matsushita Electron Corp | 半導体装置 |
| US5236551A (en) * | 1990-05-10 | 1993-08-17 | Microelectronics And Computer Technology Corporation | Rework of polymeric dielectric electrical interconnect by laser photoablation |
| JPH04253342A (ja) * | 1991-01-29 | 1992-09-09 | Oki Electric Ind Co Ltd | 薄膜トランジスタアレイ基板 |
| US5427962A (en) * | 1991-11-15 | 1995-06-27 | Casio Computer Co., Ltd. | Method of making a thin film transistor |
| US5485019A (en) * | 1992-02-05 | 1996-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| KR960012259B1 (ko) * | 1993-03-13 | 1996-09-18 | 삼성전자 주식회사 | 반도체 장치의 제조방법 |
| US5472913A (en) * | 1994-08-05 | 1995-12-05 | Texas Instruments Incorporated | Method of fabricating porous dielectric material with a passivation layer for electronics applications |
| JPH0936407A (ja) * | 1995-07-24 | 1997-02-07 | Sanyo Electric Co Ltd | 太陽電池 |
| JPH10239709A (ja) * | 1997-03-03 | 1998-09-11 | Hitachi Ltd | 液晶表示装置およびその製造方法 |
-
1997
- 1997-05-28 JP JP13821397A patent/JP4663038B2/ja not_active Expired - Lifetime
- 1997-12-01 US US08/982,079 patent/US5963826A/en not_active Expired - Lifetime
-
1998
- 1998-01-26 TW TW087101031A patent/TW387095B/zh not_active IP Right Cessation
- 1998-02-02 KR KR1019980002752A patent/KR19980086488A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980086488A (ko) | 1998-12-05 |
| JP4663038B2 (ja) | 2011-03-30 |
| US5963826A (en) | 1999-10-05 |
| JPH10335452A (ja) | 1998-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |