JP4663038B2 - コンタクトホールの形成方法 - Google Patents

コンタクトホールの形成方法 Download PDF

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Publication number
JP4663038B2
JP4663038B2 JP13821397A JP13821397A JP4663038B2 JP 4663038 B2 JP4663038 B2 JP 4663038B2 JP 13821397 A JP13821397 A JP 13821397A JP 13821397 A JP13821397 A JP 13821397A JP 4663038 B2 JP4663038 B2 JP 4663038B2
Authority
JP
Japan
Prior art keywords
conductive film
forming
contact hole
electrode wiring
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13821397A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10335452A5 (enExample
JPH10335452A (ja
Inventor
昌一 ▲たか▼鍋
匡史 裏
伸宏 中村
攻 伊藤
幸雄 遠藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13821397A priority Critical patent/JP4663038B2/ja
Priority to US08/982,079 priority patent/US5963826A/en
Priority to TW087101031A priority patent/TW387095B/zh
Priority to KR1019980002752A priority patent/KR19980086488A/ko
Publication of JPH10335452A publication Critical patent/JPH10335452A/ja
Publication of JPH10335452A5 publication Critical patent/JPH10335452A5/ja
Application granted granted Critical
Publication of JP4663038B2 publication Critical patent/JP4663038B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP13821397A 1997-05-28 1997-05-28 コンタクトホールの形成方法 Expired - Lifetime JP4663038B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP13821397A JP4663038B2 (ja) 1997-05-28 1997-05-28 コンタクトホールの形成方法
US08/982,079 US5963826A (en) 1997-05-28 1997-12-01 Method of forming contact hole and multilayered lines structure
TW087101031A TW387095B (en) 1997-05-28 1998-01-26 Method for forming a contact hole and a multi-layer circuit structure
KR1019980002752A KR19980086488A (ko) 1997-05-28 1998-02-02 콘택트홀 형성 방법 및 다층 배선 구조물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13821397A JP4663038B2 (ja) 1997-05-28 1997-05-28 コンタクトホールの形成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007317477A Division JP4747157B2 (ja) 2007-12-07 2007-12-07 コンタクトホールの形成方法

Publications (3)

Publication Number Publication Date
JPH10335452A JPH10335452A (ja) 1998-12-18
JPH10335452A5 JPH10335452A5 (enExample) 2004-12-24
JP4663038B2 true JP4663038B2 (ja) 2011-03-30

Family

ID=15216734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13821397A Expired - Lifetime JP4663038B2 (ja) 1997-05-28 1997-05-28 コンタクトホールの形成方法

Country Status (4)

Country Link
US (1) US5963826A (enExample)
JP (1) JP4663038B2 (enExample)
KR (1) KR19980086488A (enExample)
TW (1) TW387095B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008540A (en) * 1997-05-28 1999-12-28 Texas Instruments Incorporated Integrated circuit dielectric and method
JPH1145779A (ja) * 1997-07-25 1999-02-16 Tdk Corp 有機ｅｌ素子の製造方法および装置
US7067861B1 (en) * 1998-11-25 2006-06-27 Micron Technology, Inc. Device and method for protecting against oxidation of a conductive layer in said device
US6303972B1 (en) * 1998-11-25 2001-10-16 Micron Technology, Inc. Device including a conductive layer protected against oxidation
US6492242B1 (en) * 2000-07-03 2002-12-10 Chartered Semiconductor Manufacturing Ltd. Method of forming of high K metallic dielectric layer
KR100556346B1 (ko) * 2001-12-28 2006-03-03 엘지.필립스 엘시디 주식회사 금속 배선 형성방법
KR100518228B1 (ko) * 2003-05-21 2005-10-04 주식회사 하이닉스반도체 반도체 소자의 제조방법
CN100362413C (zh) * 2004-09-29 2008-01-16 财团法人工业技术研究院 一种制作电子装置的方法
JP4604743B2 (ja) * 2005-02-01 2011-01-05 セイコーエプソン株式会社 機能性基板の製造方法、機能性基板、微細パターンの形成方法、導電膜配線、電子光学装置および電子機器
TWI310026B (en) * 2006-07-31 2009-05-21 Ether Precision Inc The molding die of molding glasses and its recycling method
JP5303994B2 (ja) * 2008-03-31 2013-10-02 東亞合成株式会社 エッチング方法、及び、導電性高分子を有する基板
JP2012033689A (ja) * 2010-07-30 2012-02-16 Sumitomo Electric Device Innovations Inc 半導体装置の製造方法
JP2012033688A (ja) * 2010-07-30 2012-02-16 Sumitomo Electric Ind Ltd 半導体装置の製造方法
WO2018230377A1 (ja) * 2017-06-14 2018-12-20 東京エレクトロン株式会社 基板処理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3851161A (en) * 1973-05-07 1974-11-26 Burroughs Corp Continuity network testing and fault isolating
JPH01152648A (ja) * 1987-12-09 1989-06-15 Matsushita Electron Corp 半導体装置
US5236551A (en) * 1990-05-10 1993-08-17 Microelectronics And Computer Technology Corporation Rework of polymeric dielectric electrical interconnect by laser photoablation
JPH04253342A (ja) * 1991-01-29 1992-09-09 Oki Electric Ind Co Ltd 薄膜トランジスタアレイ基板
US5427962A (en) * 1991-11-15 1995-06-27 Casio Computer Co., Ltd. Method of making a thin film transistor
US5485019A (en) * 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
KR960012259B1 (ko) * 1993-03-13 1996-09-18 삼성전자 주식회사 반도체 장치의 제조방법
US5472913A (en) * 1994-08-05 1995-12-05 Texas Instruments Incorporated Method of fabricating porous dielectric material with a passivation layer for electronics applications
JPH0936407A (ja) * 1995-07-24 1997-02-07 Sanyo Electric Co Ltd 太陽電池
JPH10239709A (ja) * 1997-03-03 1998-09-11 Hitachi Ltd 液晶表示装置およびその製造方法

Also Published As

Publication number Publication date
TW387095B (en) 2000-04-11
KR19980086488A (ko) 1998-12-05
US5963826A (en) 1999-10-05
JPH10335452A (ja) 1998-12-18

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