KR19980086488A - 콘택트홀 형성 방법 및 다층 배선 구조물 - Google Patents
콘택트홀 형성 방법 및 다층 배선 구조물 Download PDFInfo
- Publication number
- KR19980086488A KR19980086488A KR1019980002752A KR19980002752A KR19980086488A KR 19980086488 A KR19980086488 A KR 19980086488A KR 1019980002752 A KR1019980002752 A KR 1019980002752A KR 19980002752 A KR19980002752 A KR 19980002752A KR 19980086488 A KR19980086488 A KR 19980086488A
- Authority
- KR
- South Korea
- Prior art keywords
- conductive film
- contact hole
- electrode wiring
- forming
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 72
- 230000015572 biosynthetic process Effects 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000000059 patterning Methods 0.000 claims abstract description 18
- 230000003647 oxidation Effects 0.000 claims description 52
- 238000007254 oxidation reaction Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 22
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 169
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 51
- 239000001301 oxygen Substances 0.000 description 51
- 229910052760 oxygen Inorganic materials 0.000 description 51
- 238000009832 plasma treatment Methods 0.000 description 23
- 239000010410 layer Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 16
- 238000001039 wet etching Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 11
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 10
- 239000002344 surface layer Substances 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 230000001590 oxidative effect Effects 0.000 description 9
- 239000010409 thin film Substances 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 238000010301 surface-oxidation reaction Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000012286 potassium permanganate Substances 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- OHMHBGPWCHTMQE-UHFFFAOYSA-N 2,2-dichloro-1,1,1-trifluoroethane Chemical compound FC(F)(F)C(Cl)Cl OHMHBGPWCHTMQE-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229920001453 Arcel Polymers 0.000 description 1
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 1
- BFHDEAVYCCGGRJ-UHFFFAOYSA-H N.[Ce+3].S(=O)(=O)([O-])[O-].S(=O)(=O)([O-])[O-].S(=O)(=O)([O-])[O-].[Ce+3] Chemical compound N.[Ce+3].S(=O)(=O)([O-])[O-].S(=O)(=O)([O-])[O-].S(=O)(=O)([O-])[O-].[Ce+3] BFHDEAVYCCGGRJ-UHFFFAOYSA-H 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- PFWDAPBZEMTRGZ-UHFFFAOYSA-N [Ce].C(C)(=O)[O-].[Ce].[NH4+] Chemical compound [Ce].C(C)(=O)[O-].[Ce].[NH4+] PFWDAPBZEMTRGZ-UHFFFAOYSA-N 0.000 description 1
- PGJHGXFYDZHMAV-UHFFFAOYSA-K azanium;cerium(3+);disulfate Chemical compound [NH4+].[Ce+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O PGJHGXFYDZHMAV-UHFFFAOYSA-K 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- OKJMLYFJRFYBPS-UHFFFAOYSA-J tetraazanium;cerium(4+);tetrasulfate Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[Ce+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OKJMLYFJRFYBPS-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13821397A JP4663038B2 (ja) | 1997-05-28 | 1997-05-28 | コンタクトホールの形成方法 |
| JP97-138213 | 1997-05-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR19980086488A true KR19980086488A (ko) | 1998-12-05 |
Family
ID=15216734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980002752A Ceased KR19980086488A (ko) | 1997-05-28 | 1998-02-02 | 콘택트홀 형성 방법 및 다층 배선 구조물 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5963826A (enExample) |
| JP (1) | JP4663038B2 (enExample) |
| KR (1) | KR19980086488A (enExample) |
| TW (1) | TW387095B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6008540A (en) * | 1997-05-28 | 1999-12-28 | Texas Instruments Incorporated | Integrated circuit dielectric and method |
| JPH1145779A (ja) * | 1997-07-25 | 1999-02-16 | Tdk Corp | 有機ｅｌ素子の製造方法および装置 |
| US7067861B1 (en) * | 1998-11-25 | 2006-06-27 | Micron Technology, Inc. | Device and method for protecting against oxidation of a conductive layer in said device |
| US6303972B1 (en) * | 1998-11-25 | 2001-10-16 | Micron Technology, Inc. | Device including a conductive layer protected against oxidation |
| US6492242B1 (en) * | 2000-07-03 | 2002-12-10 | Chartered Semiconductor Manufacturing Ltd. | Method of forming of high K metallic dielectric layer |
| KR100556346B1 (ko) * | 2001-12-28 | 2006-03-03 | 엘지.필립스 엘시디 주식회사 | 금속 배선 형성방법 |
| KR100518228B1 (ko) * | 2003-05-21 | 2005-10-04 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| CN100362413C (zh) * | 2004-09-29 | 2008-01-16 | 财团法人工业技术研究院 | 一种制作电子装置的方法 |
| JP4604743B2 (ja) * | 2005-02-01 | 2011-01-05 | セイコーエプソン株式会社 | 機能性基板の製造方法、機能性基板、微細パターンの形成方法、導電膜配線、電子光学装置および電子機器 |
| TWI310026B (en) * | 2006-07-31 | 2009-05-21 | Ether Precision Inc | The molding die of molding glasses and its recycling method |
| JP5303994B2 (ja) * | 2008-03-31 | 2013-10-02 | 東亞合成株式会社 | エッチング方法、及び、導電性高分子を有する基板 |
| JP2012033689A (ja) * | 2010-07-30 | 2012-02-16 | Sumitomo Electric Device Innovations Inc | 半導体装置の製造方法 |
| JP2012033688A (ja) * | 2010-07-30 | 2012-02-16 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
| WO2018230377A1 (ja) * | 2017-06-14 | 2018-12-20 | 東京エレクトロン株式会社 | 基板処理方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3851161A (en) * | 1973-05-07 | 1974-11-26 | Burroughs Corp | Continuity network testing and fault isolating |
| JPH01152648A (ja) * | 1987-12-09 | 1989-06-15 | Matsushita Electron Corp | 半導体装置 |
| US5236551A (en) * | 1990-05-10 | 1993-08-17 | Microelectronics And Computer Technology Corporation | Rework of polymeric dielectric electrical interconnect by laser photoablation |
| JPH04253342A (ja) * | 1991-01-29 | 1992-09-09 | Oki Electric Ind Co Ltd | 薄膜トランジスタアレイ基板 |
| US5427962A (en) * | 1991-11-15 | 1995-06-27 | Casio Computer Co., Ltd. | Method of making a thin film transistor |
| US5485019A (en) * | 1992-02-05 | 1996-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| KR960012259B1 (ko) * | 1993-03-13 | 1996-09-18 | 삼성전자 주식회사 | 반도체 장치의 제조방법 |
| US5472913A (en) * | 1994-08-05 | 1995-12-05 | Texas Instruments Incorporated | Method of fabricating porous dielectric material with a passivation layer for electronics applications |
| JPH0936407A (ja) * | 1995-07-24 | 1997-02-07 | Sanyo Electric Co Ltd | 太陽電池 |
| JPH10239709A (ja) * | 1997-03-03 | 1998-09-11 | Hitachi Ltd | 液晶表示装置およびその製造方法 |
-
1997
- 1997-05-28 JP JP13821397A patent/JP4663038B2/ja not_active Expired - Lifetime
- 1997-12-01 US US08/982,079 patent/US5963826A/en not_active Expired - Lifetime
-
1998
- 1998-01-26 TW TW087101031A patent/TW387095B/zh not_active IP Right Cessation
- 1998-02-02 KR KR1019980002752A patent/KR19980086488A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| TW387095B (en) | 2000-04-11 |
| JP4663038B2 (ja) | 2011-03-30 |
| US5963826A (en) | 1999-10-05 |
| JPH10335452A (ja) | 1998-12-18 |
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Legal Events
| Date | Code | Title | Description |
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| A201 | Request for examination | ||
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19980202 |
|
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19980202 Comment text: Request for Examination of Application |
|
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20000831 Patent event code: PE09021S01D |
|
| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20011130 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20000831 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
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| J201 | Request for trial against refusal decision | ||
| PJ0201 | Trial against decision of rejection |
Patent event date: 20020228 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 20011130 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Decision date: 20030929 Appeal identifier: 2002101000622 Request date: 20020228 |
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| AMND | Amendment | ||
| PB0901 | Examination by re-examination before a trial |
Comment text: Amendment to Specification, etc. Patent event date: 20020330 Patent event code: PB09011R02I Comment text: Request for Trial against Decision on Refusal Patent event date: 20020228 Patent event code: PB09011R01I Comment text: Amendment to Specification, etc. Patent event date: 20010131 Patent event code: PB09011R02I |
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| B601 | Maintenance of original decision after re-examination before a trial | ||
| PB0601 | Maintenance of original decision after re-examination before a trial | ||
| J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20020228 Effective date: 20030929 |
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| PJ1301 | Trial decision |
Patent event code: PJ13011S01D Patent event date: 20031001 Comment text: Trial Decision on Objection to Decision on Refusal Appeal kind category: Appeal against decision to decline refusal Request date: 20020228 Decision date: 20030929 Appeal identifier: 2002101000622 |