JPH10303439A - 光伝送性層、光電子デバイス及びその製造法 - Google Patents

光伝送性層、光電子デバイス及びその製造法

Info

Publication number
JPH10303439A
JPH10303439A JP10109736A JP10973698A JPH10303439A JP H10303439 A JPH10303439 A JP H10303439A JP 10109736 A JP10109736 A JP 10109736A JP 10973698 A JP10973698 A JP 10973698A JP H10303439 A JPH10303439 A JP H10303439A
Authority
JP
Japan
Prior art keywords
light
optoelectronic
layer
elements
microlens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10109736A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10303439A5 (enExample
Inventor
S Tan Town
トゥン・エス・タン
Ronald Kaneshiro
ロナルド・カネシロ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JPH10303439A publication Critical patent/JPH10303439A/ja
Publication of JPH10303439A5 publication Critical patent/JPH10303439A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
JP10109736A 1997-04-30 1998-04-20 光伝送性層、光電子デバイス及びその製造法 Withdrawn JPH10303439A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US846,730 1997-04-30
US08/846,730 US6043481A (en) 1997-04-30 1997-04-30 Optoelectronic array device having a light transmissive spacer layer with a ridged pattern and method of making same

Publications (2)

Publication Number Publication Date
JPH10303439A true JPH10303439A (ja) 1998-11-13
JPH10303439A5 JPH10303439A5 (enExample) 2005-09-22

Family

ID=25298776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10109736A Withdrawn JPH10303439A (ja) 1997-04-30 1998-04-20 光伝送性層、光電子デバイス及びその製造法

Country Status (4)

Country Link
US (1) US6043481A (enExample)
EP (1) EP0875940B1 (enExample)
JP (1) JPH10303439A (enExample)
DE (1) DE69820331T2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013011803A (ja) * 2011-06-30 2013-01-17 Oki Data Corp ディスプレイモジュール及びその製造方法と表示装置
JP2015056629A (ja) * 2013-09-13 2015-03-23 富士通株式会社 光デバイス、光モジュール、光デバイスの製造方法及び光モジュールの製造方法

Families Citing this family (32)

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JP4123667B2 (ja) * 2000-01-26 2008-07-23 凸版印刷株式会社 固体撮像素子の製造方法
US6909554B2 (en) 2000-12-27 2005-06-21 Finisar Corporation Wafer integration of micro-optics
US6556349B2 (en) * 2000-12-27 2003-04-29 Honeywell International Inc. Variable focal length micro lens array field curvature corrector
DE10153176A1 (de) * 2001-08-24 2003-03-13 Schott Glas Packaging von Bauelementen mit sensorischen Eigenschaften mit einer strukturierbaren Abdichtungsschicht
SG118104A1 (en) * 2001-12-10 2006-01-27 Advanpack Solutions Pte Ltd Method for packaging an optoelectronic device and package formed thereby
DE10221858A1 (de) * 2002-02-25 2003-09-11 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung desselben
US6856462B1 (en) * 2002-03-05 2005-02-15 Serigraph Inc. Lenticular imaging system and method of manufacturing same
DE10222964B4 (de) * 2002-04-15 2004-07-08 Schott Glas Verfahren zur Gehäusebildung bei elektronischen Bauteilen sowie so hermetisch verkapselte elektronische Bauteile
US7290802B1 (en) * 2003-01-22 2007-11-06 Serigraph, Inc. Second surface micromotion display
JP4114060B2 (ja) * 2003-02-06 2008-07-09 セイコーエプソン株式会社 受光素子の製造方法
US6953925B2 (en) * 2003-04-28 2005-10-11 Stmicroelectronics, Inc. Microlens integration
JP4120813B2 (ja) * 2003-06-12 2008-07-16 セイコーエプソン株式会社 光学部品およびその製造方法
US8031253B2 (en) * 2003-06-24 2011-10-04 Omnivision International Holding, Ltd. Image sensor having micro-lens array separated with ridge structures and method of making
KR100541028B1 (ko) * 2003-07-21 2006-01-11 주식회사 옵토메카 이미지 센서 및 그 제조 방법
EP3246093A1 (en) 2003-10-24 2017-11-22 Aushon Biosystems, Inc. Apparatus and method for dispensing fluid, semi-solid and solid samples
KR100640531B1 (ko) * 2004-08-20 2006-10-30 동부일렉트로닉스 주식회사 자기 정렬 이미지 센서 제조방법
KR100595601B1 (ko) * 2004-12-14 2006-07-05 동부일렉트로닉스 주식회사 씨모스 이미지 센서 제조방법
US7303931B2 (en) * 2005-02-10 2007-12-04 Micron Technology, Inc. Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces
US7264976B2 (en) * 2005-02-23 2007-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Advance ridge structure for microlens gapless approach
KR100649031B1 (ko) * 2005-06-27 2006-11-27 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
KR100698091B1 (ko) * 2005-06-27 2007-03-23 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
KR100720535B1 (ko) * 2005-10-11 2007-05-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
KR100821346B1 (ko) * 2006-08-02 2008-04-10 삼성전자주식회사 화질이 향상되는 이미지 센서 및 이를 이용한 이미지 감지방법
KR100891075B1 (ko) * 2006-12-29 2009-03-31 동부일렉트로닉스 주식회사 이미지 센서의 제조방법
TWM322104U (en) * 2007-02-09 2007-11-11 Sin Guang Li Internat Co Ltd Improved structure of solar cell plate
DE102007042984A1 (de) * 2007-09-10 2009-03-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur optischen Navigation
KR100937657B1 (ko) * 2007-11-30 2010-01-19 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
US7609451B1 (en) 2008-02-05 2009-10-27 Serigraph, Inc. Printed article for displaying images having improved definition and depth
GB2464102A (en) * 2008-10-01 2010-04-07 Optovate Ltd Illumination apparatus comprising multiple monolithic subarrays
KR20100077364A (ko) * 2008-12-29 2010-07-08 주식회사 동부하이텍 씨모스 이미지 센서의 제조 방법
DE102009005092A1 (de) * 2009-01-19 2010-09-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur optischen Navigation und dessen Verwendung
US10367021B2 (en) 2013-12-17 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and fabricating method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689291A (en) * 1985-08-30 1987-08-25 Xerox Corporation Pedestal-type microlens fabrication process
US4694185A (en) * 1986-04-18 1987-09-15 Eastman Kodak Company Light sensing devices with lenticular pixels
EP0380654A1 (en) * 1988-08-01 1990-08-08 EASTMAN KODAK COMPANY (a New Jersey corporation) Lens arrays for light sensitive devices
US5239412A (en) * 1990-02-05 1993-08-24 Sharp Kabushiki Kaisha Solid image pickup device having microlenses
JPH0821703B2 (ja) * 1990-07-17 1996-03-04 株式会社東芝 固体撮像素子
US5298366A (en) * 1990-10-09 1994-03-29 Brother Kogyo Kabushiki Kaisha Method for producing a microlens array
JPH04252084A (ja) * 1991-01-28 1992-09-08 Eastman Kodak Japan Kk Ｌｅｄレンズアレイの製造方法
JP3067114B2 (ja) * 1991-06-04 2000-07-17 ソニー株式会社 マイクロレンズ形成方法
JP2566087B2 (ja) * 1992-01-27 1996-12-25 株式会社東芝 有色マイクロレンズアレイ及びその製造方法
US5310623A (en) * 1992-11-27 1994-05-10 Lockheed Missiles & Space Company, Inc. Method for fabricating microlenses
US5317149A (en) * 1992-11-12 1994-05-31 Hewlett-Packard Company Optical encoder with encapsulated electrooptics
JPH08111540A (ja) * 1994-08-19 1996-04-30 Texas Instr Inc <Ti> 透明な共振トンネリング光検出器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013011803A (ja) * 2011-06-30 2013-01-17 Oki Data Corp ディスプレイモジュール及びその製造方法と表示装置
JP2015056629A (ja) * 2013-09-13 2015-03-23 富士通株式会社 光デバイス、光モジュール、光デバイスの製造方法及び光モジュールの製造方法

Also Published As

Publication number Publication date
EP0875940B1 (en) 2003-12-10
EP0875940A2 (en) 1998-11-04
US6043481A (en) 2000-03-28
DE69820331T2 (de) 2004-11-18
DE69820331D1 (de) 2004-01-22
EP0875940A3 (en) 2000-01-05

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