DE69820331T2 - Optoelektronische Anordnung und Verfahren zu deren Herstellung - Google Patents
Optoelektronische Anordnung und Verfahren zu deren Herstellung Download PDFInfo
- Publication number
- DE69820331T2 DE69820331T2 DE1998620331 DE69820331T DE69820331T2 DE 69820331 T2 DE69820331 T2 DE 69820331T2 DE 1998620331 DE1998620331 DE 1998620331 DE 69820331 T DE69820331 T DE 69820331T DE 69820331 T2 DE69820331 T2 DE 69820331T2
- Authority
- DE
- Germany
- Prior art keywords
- light
- optoelectronic
- elements
- layer
- microlens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005693 optoelectronics Effects 0.000 title claims description 52
- 238000000034 method Methods 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229920000642 polymer Polymers 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 19
- 125000006850 spacer group Chemical group 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 45
- 238000012546 transfer Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002493 microarray Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/846,730 US6043481A (en) | 1997-04-30 | 1997-04-30 | Optoelectronic array device having a light transmissive spacer layer with a ridged pattern and method of making same |
| US846730 | 1997-04-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69820331D1 DE69820331D1 (de) | 2004-01-22 |
| DE69820331T2 true DE69820331T2 (de) | 2004-11-18 |
Family
ID=25298776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1998620331 Expired - Fee Related DE69820331T2 (de) | 1997-04-30 | 1998-01-19 | Optoelektronische Anordnung und Verfahren zu deren Herstellung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6043481A (enExample) |
| EP (1) | EP0875940B1 (enExample) |
| JP (1) | JPH10303439A (enExample) |
| DE (1) | DE69820331T2 (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4123667B2 (ja) * | 2000-01-26 | 2008-07-23 | 凸版印刷株式会社 | 固体撮像素子の製造方法 |
| US6556349B2 (en) * | 2000-12-27 | 2003-04-29 | Honeywell International Inc. | Variable focal length micro lens array field curvature corrector |
| US6909554B2 (en) | 2000-12-27 | 2005-06-21 | Finisar Corporation | Wafer integration of micro-optics |
| DE10153176A1 (de) * | 2001-08-24 | 2003-03-13 | Schott Glas | Packaging von Bauelementen mit sensorischen Eigenschaften mit einer strukturierbaren Abdichtungsschicht |
| SG118104A1 (en) * | 2001-12-10 | 2006-01-27 | Advanpack Solutions Pte Ltd | Method for packaging an optoelectronic device and package formed thereby |
| DE10221858A1 (de) * | 2002-02-25 | 2003-09-11 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung desselben |
| US6856462B1 (en) * | 2002-03-05 | 2005-02-15 | Serigraph Inc. | Lenticular imaging system and method of manufacturing same |
| DE10222964B4 (de) * | 2002-04-15 | 2004-07-08 | Schott Glas | Verfahren zur Gehäusebildung bei elektronischen Bauteilen sowie so hermetisch verkapselte elektronische Bauteile |
| US7290802B1 (en) * | 2003-01-22 | 2007-11-06 | Serigraph, Inc. | Second surface micromotion display |
| JP4114060B2 (ja) * | 2003-02-06 | 2008-07-09 | セイコーエプソン株式会社 | 受光素子の製造方法 |
| US6953925B2 (en) * | 2003-04-28 | 2005-10-11 | Stmicroelectronics, Inc. | Microlens integration |
| JP4120813B2 (ja) * | 2003-06-12 | 2008-07-16 | セイコーエプソン株式会社 | 光学部品およびその製造方法 |
| US8031253B2 (en) * | 2003-06-24 | 2011-10-04 | Omnivision International Holding, Ltd. | Image sensor having micro-lens array separated with ridge structures and method of making |
| KR100541028B1 (ko) * | 2003-07-21 | 2006-01-11 | 주식회사 옵토메카 | 이미지 센서 및 그 제조 방법 |
| DK2322278T3 (en) | 2003-10-24 | 2017-04-10 | Aushon Biosystems Inc | Apparatus and method for dispensing liquid, semi-solid and solid samples |
| KR100640531B1 (ko) * | 2004-08-20 | 2006-10-30 | 동부일렉트로닉스 주식회사 | 자기 정렬 이미지 센서 제조방법 |
| KR100595601B1 (ko) * | 2004-12-14 | 2006-07-05 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 제조방법 |
| US7303931B2 (en) * | 2005-02-10 | 2007-12-04 | Micron Technology, Inc. | Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces |
| US7264976B2 (en) * | 2005-02-23 | 2007-09-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Advance ridge structure for microlens gapless approach |
| KR100698091B1 (ko) * | 2005-06-27 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
| KR100649031B1 (ko) * | 2005-06-27 | 2006-11-27 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
| KR100720535B1 (ko) * | 2005-10-11 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
| KR100821346B1 (ko) * | 2006-08-02 | 2008-04-10 | 삼성전자주식회사 | 화질이 향상되는 이미지 센서 및 이를 이용한 이미지 감지방법 |
| KR100891075B1 (ko) * | 2006-12-29 | 2009-03-31 | 동부일렉트로닉스 주식회사 | 이미지 센서의 제조방법 |
| TWM322104U (en) * | 2007-02-09 | 2007-11-11 | Sin Guang Li Internat Co Ltd | Improved structure of solar cell plate |
| DE102007042984A1 (de) * | 2007-09-10 | 2009-03-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung zur optischen Navigation |
| KR100937657B1 (ko) * | 2007-11-30 | 2010-01-19 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조 방법 |
| US7609451B1 (en) | 2008-02-05 | 2009-10-27 | Serigraph, Inc. | Printed article for displaying images having improved definition and depth |
| GB2464102A (en) * | 2008-10-01 | 2010-04-07 | Optovate Ltd | Illumination apparatus comprising multiple monolithic subarrays |
| KR20100077364A (ko) * | 2008-12-29 | 2010-07-08 | 주식회사 동부하이텍 | 씨모스 이미지 센서의 제조 방법 |
| DE102009005092A1 (de) * | 2009-01-19 | 2010-09-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung zur optischen Navigation und dessen Verwendung |
| JP5643720B2 (ja) * | 2011-06-30 | 2014-12-17 | 株式会社沖データ | ディスプレイモジュール及びその製造方法と表示装置 |
| JP6221540B2 (ja) * | 2013-09-13 | 2017-11-01 | 富士通株式会社 | 光デバイス、光モジュール、光デバイスの製造方法及び光モジュールの製造方法 |
| US10367021B2 (en) * | 2013-12-17 | 2019-07-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and fabricating method thereof |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4689291A (en) * | 1985-08-30 | 1987-08-25 | Xerox Corporation | Pedestal-type microlens fabrication process |
| US4694185A (en) * | 1986-04-18 | 1987-09-15 | Eastman Kodak Company | Light sensing devices with lenticular pixels |
| JPH03500834A (ja) * | 1988-08-01 | 1991-02-21 | イーストマン・コダック・カンパニー | 感光装置用のレンズアレー |
| US5239412A (en) * | 1990-02-05 | 1993-08-24 | Sharp Kabushiki Kaisha | Solid image pickup device having microlenses |
| JPH0821703B2 (ja) * | 1990-07-17 | 1996-03-04 | 株式会社東芝 | 固体撮像素子 |
| US5298366A (en) * | 1990-10-09 | 1994-03-29 | Brother Kogyo Kabushiki Kaisha | Method for producing a microlens array |
| JPH04252084A (ja) * | 1991-01-28 | 1992-09-08 | Eastman Kodak Japan Kk | Ｌｅｄレンズアレイの製造方法 |
| JP3067114B2 (ja) * | 1991-06-04 | 2000-07-17 | ソニー株式会社 | マイクロレンズ形成方法 |
| JP2566087B2 (ja) * | 1992-01-27 | 1996-12-25 | 株式会社東芝 | 有色マイクロレンズアレイ及びその製造方法 |
| US5310623A (en) * | 1992-11-27 | 1994-05-10 | Lockheed Missiles & Space Company, Inc. | Method for fabricating microlenses |
| US5317149A (en) * | 1992-11-12 | 1994-05-31 | Hewlett-Packard Company | Optical encoder with encapsulated electrooptics |
| JPH08111540A (ja) * | 1994-08-19 | 1996-04-30 | Texas Instr Inc <Ti> | 透明な共振トンネリング光検出器 |
-
1997
- 1997-04-30 US US08/846,730 patent/US6043481A/en not_active Expired - Fee Related
-
1998
- 1998-01-19 DE DE1998620331 patent/DE69820331T2/de not_active Expired - Fee Related
- 1998-01-19 EP EP98100869A patent/EP0875940B1/en not_active Expired - Lifetime
- 1998-04-20 JP JP10109736A patent/JPH10303439A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10303439A (ja) | 1998-11-13 |
| DE69820331D1 (de) | 2004-01-22 |
| EP0875940A3 (en) | 2000-01-05 |
| US6043481A (en) | 2000-03-28 |
| EP0875940A2 (en) | 1998-11-04 |
| EP0875940B1 (en) | 2003-12-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, TE Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D. STAATES, US |
|
| 8339 | Ceased/non-payment of the annual fee |