DE69215940T2 - Festkörper-Bildaufnahme-Vorrichtung und deren Herstellungsmethode - Google Patents

Festkörper-Bildaufnahme-Vorrichtung und deren Herstellungsmethode

Info

Publication number
DE69215940T2
DE69215940T2 DE1992615940 DE69215940T DE69215940T2 DE 69215940 T2 DE69215940 T2 DE 69215940T2 DE 1992615940 DE1992615940 DE 1992615940 DE 69215940 T DE69215940 T DE 69215940T DE 69215940 T2 DE69215940 T2 DE 69215940T2
Authority
DE
Germany
Prior art keywords
manufacture
imaging device
solid state
state imaging
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1992615940
Other languages
English (en)
Other versions
DE69215940D1 (de
Inventor
Toru Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of DE69215940D1 publication Critical patent/DE69215940D1/de
Publication of DE69215940T2 publication Critical patent/DE69215940T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE1992615940 1991-03-06 1992-03-06 Festkörper-Bildaufnahme-Vorrichtung und deren Herstellungsmethode Expired - Fee Related DE69215940T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3999091 1991-03-06
JP3998991 1991-03-06

Publications (2)

Publication Number Publication Date
DE69215940D1 DE69215940D1 (de) 1997-01-30
DE69215940T2 true DE69215940T2 (de) 1997-06-12

Family

ID=26379399

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1992615940 Expired - Fee Related DE69215940T2 (de) 1991-03-06 1992-03-06 Festkörper-Bildaufnahme-Vorrichtung und deren Herstellungsmethode
DE1992632642 Expired - Fee Related DE69232642T2 (de) 1991-03-06 1992-03-06 Festkörper-Bildaufnahme-Vorrichtung und deren Herstellungsmethode

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1992632642 Expired - Fee Related DE69232642T2 (de) 1991-03-06 1992-03-06 Festkörper-Bildaufnahme-Vorrichtung und deren Herstellungsmethode

Country Status (3)

Country Link
EP (2) EP0507456B1 (de)
JP (1) JPH0567762A (de)
DE (2) DE69215940T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0147401B1 (ko) * 1994-02-23 1998-08-01 구본준 고체촬상소자 및 그 제조방법
DE19545484C2 (de) * 1995-12-06 2002-06-20 Deutsche Telekom Ag Bildaufnahmeeinrichtung
CN1300857C (zh) * 2004-04-14 2007-02-14 中华电信股份有限公司 一种微光学透镜的制造方法
CN101769784B (zh) * 2008-12-27 2012-06-20 鸿富锦精密工业（深圳）有限公司 感测器组合

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667092A (en) * 1982-12-28 1987-05-19 Nec Corporation Solid-state image device with resin lens and resin contact layer
JPS6053073A (ja) * 1983-09-02 1985-03-26 Hitachi Ltd マイクロレンズ付固体撮像素子および製法
JPS61208276A (ja) * 1985-03-13 1986-09-16 Hitachi Ltd 受光素子およびその製造方法
US5239412A (en) * 1990-02-05 1993-08-24 Sharp Kabushiki Kaisha Solid image pickup device having microlenses

Also Published As

Publication number Publication date
EP0661757A2 (de) 1995-07-05
EP0507456A2 (de) 1992-10-07
DE69232642T2 (de) 2002-10-31
EP0507456A3 (en) 1993-03-31
EP0661757B1 (de) 2002-06-12
EP0507456B1 (de) 1996-12-18
DE69232642D1 (de) 2002-07-18
JPH0567762A (ja) 1993-03-19
EP0661757A3 (de) 1998-04-08
DE69215940D1 (de) 1997-01-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA,

8339 Ceased/non-payment of the annual fee