JPH10199242A5 - - Google Patents

Info

Publication number
JPH10199242A5
JPH10199242A5 JP1997000612A JP61297A JPH10199242A5 JP H10199242 A5 JPH10199242 A5 JP H10199242A5 JP 1997000612 A JP1997000612 A JP 1997000612A JP 61297 A JP61297 A JP 61297A JP H10199242 A5 JPH10199242 A5 JP H10199242A5
Authority
JP
Japan
Prior art keywords
mos transistor
channel mos
power supply
gate
supply node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997000612A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10199242A (ja
JP3963990B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP00061297A priority Critical patent/JP3963990B2/ja
Priority claimed from JP00061297A external-priority patent/JP3963990B2/ja
Priority to US08/873,022 priority patent/US5973548A/en
Publication of JPH10199242A publication Critical patent/JPH10199242A/ja
Publication of JPH10199242A5 publication Critical patent/JPH10199242A5/ja
Application granted granted Critical
Publication of JP3963990B2 publication Critical patent/JP3963990B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP00061297A 1997-01-07 1997-01-07 内部電源電圧発生回路 Expired - Fee Related JP3963990B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP00061297A JP3963990B2 (ja) 1997-01-07 1997-01-07 内部電源電圧発生回路
US08/873,022 US5973548A (en) 1997-01-07 1997-06-11 Internal supply voltage generating circuit for generating internal supply voltage less susceptible to variation of external supply voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00061297A JP3963990B2 (ja) 1997-01-07 1997-01-07 内部電源電圧発生回路

Publications (3)

Publication Number Publication Date
JPH10199242A JPH10199242A (ja) 1998-07-31
JPH10199242A5 true JPH10199242A5 (enExample) 2004-12-09
JP3963990B2 JP3963990B2 (ja) 2007-08-22

Family

ID=11478566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP00061297A Expired - Fee Related JP3963990B2 (ja) 1997-01-07 1997-01-07 内部電源電圧発生回路

Country Status (2)

Country Link
US (1) US5973548A (enExample)
JP (1) JP3963990B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6351180B1 (en) * 1999-08-31 2002-02-26 Micron Technology, Inc. Clamp circuit with fuse options
JP2001143476A (ja) 1999-11-15 2001-05-25 Mitsubishi Electric Corp スタティック型半導体記憶装置
US6320454B1 (en) * 2000-06-01 2001-11-20 Atmel Corporation Low power voltage regulator circuit for use in an integrated circuit device
JP4743938B2 (ja) * 2000-06-12 2011-08-10 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP2002074967A (ja) 2000-08-29 2002-03-15 Mitsubishi Electric Corp 降圧電源回路
US7554312B2 (en) * 2003-06-30 2009-06-30 Intel Corporation DC-to-DC voltage converter
US6924692B2 (en) * 2003-06-30 2005-08-02 Intel Corporation Voltage reference generator
JP4913376B2 (ja) * 2005-08-22 2012-04-11 ローム株式会社 半導体集積回路装置
US20070164791A1 (en) * 2006-01-17 2007-07-19 Rao T V Chanakya Low voltage detect and/or regulation circuit
US7830200B2 (en) * 2006-01-17 2010-11-09 Cypress Semiconductor Corporation High voltage tolerant bias circuit with low voltage transistors
US7755419B2 (en) 2006-01-17 2010-07-13 Cypress Semiconductor Corporation Low power beta multiplier start-up circuit and method
KR100902054B1 (ko) * 2007-11-12 2009-06-12 주식회사 하이닉스반도체 반도체 메모리 장치의 기준 전압 공급 회로 및 방법
JP5259270B2 (ja) 2008-06-27 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置
US8154320B1 (en) * 2009-03-24 2012-04-10 Lockheed Martin Corporation Voltage level shifter
JP5723628B2 (ja) * 2011-02-18 2015-05-27 ルネサスエレクトロニクス株式会社 電圧検出回路
CN103235632B (zh) * 2013-04-15 2015-01-21 无锡普雅半导体有限公司 一种低压跟随的开环电压调整电路
KR102171261B1 (ko) * 2013-12-27 2020-10-28 삼성전자 주식회사 다수의 전압 발생부들을 갖는 메모리 장치

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4475050A (en) * 1981-12-21 1984-10-02 Motorola, Inc. TTL To CMOS input buffer
US4585955B1 (en) * 1982-12-15 2000-11-21 Tokyo Shibaura Electric Co Internally regulated power voltage circuit for mis semiconductor integrated circuit
JPS59218042A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体集積回路
US4857769A (en) * 1987-01-14 1989-08-15 Hitachi, Ltd. Threshold voltage fluctuation compensation circuit for FETS
JP2751422B2 (ja) * 1988-06-27 1998-05-18 日本電気株式会社 半導体装置
JPH03207091A (ja) * 1990-01-08 1991-09-10 Nec Corp 内部電源電圧降圧回路
JP3124781B2 (ja) * 1990-03-30 2001-01-15 富士通株式会社 半導体集積回路装置
JPH0454724A (ja) * 1990-06-22 1992-02-21 Sumitomo Electric Ind Ltd 論理回路
KR950004858B1 (ko) * 1992-03-17 1995-05-15 삼성전자 주식회사 내부전원전압 발생회로
JPH05314769A (ja) * 1992-05-13 1993-11-26 Mitsubishi Electric Corp 半導体集積回路装置
JPH0793977A (ja) * 1993-04-26 1995-04-07 Samsung Electron Co Ltd 半導体メモリ装置の中間電圧発生回路
JP2531104B2 (ja) * 1993-08-02 1996-09-04 日本電気株式会社 基準電位発生回路
JPH0778470A (ja) * 1993-09-10 1995-03-20 Fujitsu Ltd 半導体記憶装置
US5552740A (en) * 1994-02-08 1996-09-03 Micron Technology, Inc. N-channel voltage regulator
EP0685847B1 (en) * 1994-05-31 2002-05-02 STMicroelectronics S.r.l. Low dissipation initialization circuit, particularly for memory registers
US5568084A (en) * 1994-12-16 1996-10-22 Sgs-Thomson Microelectronics, Inc. Circuit for providing a compensated bias voltage
JP3586502B2 (ja) * 1995-09-04 2004-11-10 株式会社ルネサステクノロジ 電圧発生回路

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