JPH10125099A - フラッシュｅｅｐｒｏｍの閾値電圧を検査および調整する方法とシステム - Google Patents

フラッシュｅｅｐｒｏｍの閾値電圧を検査および調整する方法とシステム

Info

Publication number
JPH10125099A
JPH10125099A JP27614197A JP27614197A JPH10125099A JP H10125099 A JPH10125099 A JP H10125099A JP 27614197 A JP27614197 A JP 27614197A JP 27614197 A JP27614197 A JP 27614197A JP H10125099 A JPH10125099 A JP H10125099A
Authority
JP
Japan
Prior art keywords
cell
voltage
cells
threshold voltage
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27614197A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10125099A5 (enExample
Inventor
Kemal T San
ティー．サン ケマル
Cetin Kaya
カヤ セティン
Freidoon Mehrad
メーラッド フレイドーン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH10125099A publication Critical patent/JPH10125099A/ja
Publication of JPH10125099A5 publication Critical patent/JPH10125099A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81—Threshold
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006—Current

Landscapes

  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
JP27614197A 1996-10-08 1997-10-08 フラッシュｅｅｐｒｏｍの閾値電圧を検査および調整する方法とシステム Pending JPH10125099A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2797196P 1996-10-08 1996-10-08
US027971 1996-10-08

Publications (2)

Publication Number Publication Date
JPH10125099A true JPH10125099A (ja) 1998-05-15
JPH10125099A5 JPH10125099A5 (enExample) 2006-03-02

Family

ID=21840832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27614197A Pending JPH10125099A (ja) 1996-10-08 1997-10-08 フラッシュｅｅｐｒｏｍの閾値電圧を検査および調整する方法とシステム

Country Status (4)

Country Link
US (1) US5909397A (enExample)
EP (1) EP0836196B1 (enExample)
JP (1) JPH10125099A (enExample)
DE (1) DE69735918T2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100305032B1 (ko) * 1999-06-22 2001-11-01 윤종용 반도체 메모리 장치

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4229482B2 (ja) * 1997-10-24 2009-02-25 株式会社ルネサステクノロジ フラッシュメモリ内蔵マイクロコンピュータ
JP4138173B2 (ja) * 1999-08-26 2008-08-20 株式会社ルネサステクノロジ 不揮発性半導体記憶装置およびその消去方法
US6128219A (en) * 1999-10-27 2000-10-03 Stmicroelectronics, S.R.L. Nonvolatile memory test structure and nonvolatile memory reliability test method
US6684173B2 (en) * 2001-10-09 2004-01-27 Micron Technology, Inc. System and method of testing non-volatile memory cells
US7345918B2 (en) * 2005-08-31 2008-03-18 Micron Technology, Inc. Selective threshold voltage verification and compaction
US7986553B2 (en) * 2007-06-15 2011-07-26 Micron Technology, Inc. Programming of a solid state memory utilizing analog communication of bit patterns
US9711211B2 (en) 2015-10-29 2017-07-18 Sandisk Technologies Llc Dynamic threshold voltage compaction for non-volatile memory

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04222994A (ja) * 1990-12-26 1992-08-12 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5371706A (en) * 1992-08-20 1994-12-06 Texas Instruments Incorporated Circuit and method for sensing depletion of memory cells
US5428621A (en) * 1992-09-21 1995-06-27 Sundisk Corporation Latent defect handling in EEPROM devices
JPH06251593A (ja) * 1993-02-24 1994-09-09 Matsushita Electron Corp フラッシュメモリの消去あるいは書き込み制御方法
US5424991A (en) * 1993-04-01 1995-06-13 Cypress Semiconductor Corporation Floating gate nonvolatile memory with uniformly erased threshold voltage
US5335198A (en) * 1993-05-06 1994-08-02 Advanced Micro Devices, Inc. Flash EEPROM array with high endurance
US5521867A (en) * 1993-12-01 1996-05-28 Advanced Micro Devices, Inc. Adjustable threshold voltage conversion circuit
US5412603A (en) * 1994-05-06 1995-05-02 Texas Instruments Incorporated Method and circuitry for programming floating-gate memory cell using a single low-voltage supply
EP0757355B1 (en) * 1995-07-31 2000-04-19 STMicroelectronics S.r.l. Mixed parallel-dichotomic serial sensing method for sensing multiple-levels non-volatile memory cells, and sensing circuit actuating such method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100305032B1 (ko) * 1999-06-22 2001-11-01 윤종용 반도체 메모리 장치

Also Published As

Publication number Publication date
DE69735918D1 (de) 2006-06-29
EP0836196A3 (en) 1999-06-09
EP0836196B1 (en) 2006-05-24
EP0836196A2 (en) 1998-04-15
US5909397A (en) 1999-06-01
DE69735918T2 (de) 2007-01-11

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