JPH09107038A - Ｃｍｏｓトランジスターの製造方法 - Google Patents

Ｃｍｏｓトランジスターの製造方法

Info

Publication number
JPH09107038A
JPH09107038A JP8221622A JP22162296A JPH09107038A JP H09107038 A JPH09107038 A JP H09107038A JP 8221622 A JP8221622 A JP 8221622A JP 22162296 A JP22162296 A JP 22162296A JP H09107038 A JPH09107038 A JP H09107038A
Authority
JP
Japan
Prior art keywords
transistor
region
gate electrode
junction
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8221622A
Other languages
English (en)
Japanese (ja)
Inventor
Saiken Tei
採 賢 鄭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of JPH09107038A publication Critical patent/JPH09107038A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP8221622A 1995-08-25 1996-08-23 Ｃｍｏｓトランジスターの製造方法 Pending JPH09107038A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR95-26537 1995-08-25
KR1019950026537A KR0149256B1 (ko) 1995-08-25 1995-08-25 씨모스 트랜지스터 제조방법

Publications (1)

Publication Number Publication Date
JPH09107038A true JPH09107038A (ja) 1997-04-22

Family

ID=19424476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8221622A Pending JPH09107038A (ja) 1995-08-25 1996-08-23 Ｃｍｏｓトランジスターの製造方法

Country Status (5)

Country Link
US (1) US5856215A (enExample)
JP (1) JPH09107038A (enExample)
KR (1) KR0149256B1 (enExample)
CN (1) CN1058809C (enExample)
TW (1) TW302526B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11176949A (ja) * 1997-12-15 1999-07-02 Sony Corp 半導体装置
KR100424170B1 (ko) * 2001-06-28 2004-03-24 주식회사 하이닉스반도체 반도체 소자의 풀 씨모스 에스램 셀 제조방법
KR100464664B1 (ko) * 2003-03-12 2005-01-03 주식회사 하이닉스반도체 고전압 소자의 웰 구조
JP2008205053A (ja) * 2007-02-17 2008-09-04 Seiko Instruments Inc 半導体装置
JP2008210902A (ja) * 2007-02-24 2008-09-11 Seiko Instruments Inc カレントミラー回路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61207052A (ja) * 1985-03-12 1986-09-13 Sanyo Electric Co Ltd 高耐圧ｃｍｏｓ半導体装置
JPH01308067A (ja) * 1988-06-06 1989-12-12 Nec Corp 半導体装置
JPH0252463A (ja) * 1988-08-17 1990-02-22 Texas Instr Japan Ltd 半導体集積回路装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57107066A (en) * 1980-12-25 1982-07-03 Toshiba Corp Complementary semiconductor device and manufacture thereof
JPS5817655A (ja) * 1981-07-24 1983-02-01 Hitachi Ltd 半導体装置の製造方法
FR2555364B1 (fr) * 1983-11-18 1990-02-02 Hitachi Ltd Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset
EP0195460B1 (en) * 1985-03-22 1997-07-09 Nec Corporation Integrated circuit semiconductor device having improved isolation region
JPH01289157A (ja) * 1988-05-17 1989-11-21 Fujitsu Ltd 相補型ｍｏｓトランジスタとその製造方法
US5135888A (en) * 1989-01-18 1992-08-04 Sgs-Thomson Microelectronics, Inc. Field effect device with polycrystalline silicon channel
JPH0340463A (ja) * 1989-03-15 1991-02-21 Hitachi Ltd 半導体装置及びその製造方法
JPH0758701B2 (ja) * 1989-06-08 1995-06-21 株式会社東芝 半導体装置の製造方法
JP3184298B2 (ja) * 1992-05-28 2001-07-09 沖電気工業株式会社 Ｃｍｏｓ出力回路
US5506161A (en) * 1994-10-24 1996-04-09 Motorola, Inc. Method of manufacturing graded channels underneath the gate electrode extensions

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61207052A (ja) * 1985-03-12 1986-09-13 Sanyo Electric Co Ltd 高耐圧ｃｍｏｓ半導体装置
JPH01308067A (ja) * 1988-06-06 1989-12-12 Nec Corp 半導体装置
JPH0252463A (ja) * 1988-08-17 1990-02-22 Texas Instr Japan Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
CN1149763A (zh) 1997-05-14
TW302526B (enExample) 1997-04-11
KR970013406A (ko) 1997-03-29
CN1058809C (zh) 2000-11-22
US5856215A (en) 1999-01-05
KR0149256B1 (ko) 1998-10-01

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