TW302526B - - Google Patents
Download PDFInfo
- Publication number
- TW302526B TW302526B TW085110288A TW85110288A TW302526B TW 302526 B TW302526 B TW 302526B TW 085110288 A TW085110288 A TW 085110288A TW 85110288 A TW85110288 A TW 85110288A TW 302526 B TW302526 B TW 302526B
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- area
- junction
- type well
- patent application
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 26
- 230000001133 acceleration Effects 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000004804 winding Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 238000005192 partition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950026537A KR0149256B1 (ko) | 1995-08-25 | 1995-08-25 | 씨모스 트랜지스터 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW302526B true TW302526B (enExample) | 1997-04-11 |
Family
ID=19424476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085110288A TW302526B (enExample) | 1995-08-25 | 1996-08-23 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5856215A (enExample) |
| JP (1) | JPH09107038A (enExample) |
| KR (1) | KR0149256B1 (enExample) |
| CN (1) | CN1058809C (enExample) |
| TW (1) | TW302526B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11176949A (ja) * | 1997-12-15 | 1999-07-02 | Sony Corp | 半導体装置 |
| KR100424170B1 (ko) * | 2001-06-28 | 2004-03-24 | 주식회사 하이닉스반도체 | 반도체 소자의 풀 씨모스 에스램 셀 제조방법 |
| KR100464664B1 (ko) * | 2003-03-12 | 2005-01-03 | 주식회사 하이닉스반도체 | 고전압 소자의 웰 구조 |
| JP2008205053A (ja) * | 2007-02-17 | 2008-09-04 | Seiko Instruments Inc | 半導体装置 |
| JP2008210902A (ja) * | 2007-02-24 | 2008-09-11 | Seiko Instruments Inc | カレントミラー回路 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57107066A (en) * | 1980-12-25 | 1982-07-03 | Toshiba Corp | Complementary semiconductor device and manufacture thereof |
| JPS5817655A (ja) * | 1981-07-24 | 1983-02-01 | Hitachi Ltd | 半導体装置の製造方法 |
| FR2555364B1 (fr) * | 1983-11-18 | 1990-02-02 | Hitachi Ltd | Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset |
| JPS61207052A (ja) * | 1985-03-12 | 1986-09-13 | Sanyo Electric Co Ltd | 高耐圧ｃｍｏｓ半導体装置 |
| EP0195460B1 (en) * | 1985-03-22 | 1997-07-09 | Nec Corporation | Integrated circuit semiconductor device having improved isolation region |
| JPH01289157A (ja) * | 1988-05-17 | 1989-11-21 | Fujitsu Ltd | 相補型ｍｏｓトランジスタとその製造方法 |
| JPH01308067A (ja) * | 1988-06-06 | 1989-12-12 | Nec Corp | 半導体装置 |
| JPH0252463A (ja) * | 1988-08-17 | 1990-02-22 | Texas Instr Japan Ltd | 半導体集積回路装置 |
| US5135888A (en) * | 1989-01-18 | 1992-08-04 | Sgs-Thomson Microelectronics, Inc. | Field effect device with polycrystalline silicon channel |
| JPH0340463A (ja) * | 1989-03-15 | 1991-02-21 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JPH0758701B2 (ja) * | 1989-06-08 | 1995-06-21 | 株式会社東芝 | 半導体装置の製造方法 |
| JP3184298B2 (ja) * | 1992-05-28 | 2001-07-09 | 沖電気工業株式会社 | Ｃｍｏｓ出力回路 |
| US5506161A (en) * | 1994-10-24 | 1996-04-09 | Motorola, Inc. | Method of manufacturing graded channels underneath the gate electrode extensions |
-
1995
- 1995-08-25 KR KR1019950026537A patent/KR0149256B1/ko not_active Expired - Fee Related
-
1996
- 1996-08-22 US US08/701,585 patent/US5856215A/en not_active Expired - Fee Related
- 1996-08-23 JP JP8221622A patent/JPH09107038A/ja active Pending
- 1996-08-23 TW TW085110288A patent/TW302526B/zh not_active IP Right Cessation
- 1996-08-25 CN CN96113302A patent/CN1058809C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09107038A (ja) | 1997-04-22 |
| CN1149763A (zh) | 1997-05-14 |
| KR970013406A (ko) | 1997-03-29 |
| CN1058809C (zh) | 2000-11-22 |
| US5856215A (en) | 1999-01-05 |
| KR0149256B1 (ko) | 1998-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4907058A (en) | Complementary semiconductor device having a double well | |
| US4183134A (en) | High yield processing for silicon-on-sapphire CMOS integrated circuits | |
| TW456028B (en) | Semiconductor device and process for manufacturing semiconductor device | |
| TW302526B (enExample) | ||
| TW382789B (en) | Method for manufacturing CMOS | |
| JP3195618B2 (ja) | 超高集積半導体メモリ装置の製造方法 | |
| JPH06326273A (ja) | 半導体記憶装置 | |
| TW516224B (en) | Semiconductor device and method of manufacturing the same | |
| JPH11238810A (ja) | 相異なる厚さのゲート酸化膜形成方法 | |
| JPS6037623B2 (ja) | 半導体記憶装置 | |
| JPH02130872A (ja) | ポリシリコントランジスタの製造方法 | |
| TW402790B (en) | Manufacture method of the metal oxide semiconductor inverter | |
| US11476258B2 (en) | Semiconductor device including short-circuit prevention structure and manufacturing method thereof | |
| TW416139B (en) | Semiconductor device and fabrication process therefor | |
| JPS58116760A (ja) | 相補型ｍｏｓ半導体装置 | |
| JPS5828734B2 (ja) | ハンドウタイソウチノセイゾウホウホウ | |
| JPS5943828B2 (ja) | Ｍｏｓ形集積回路の製造方法 | |
| TW574756B (en) | Method for enhancing retention time of memory module and memory cell structure thereof | |
| JPS62224076A (ja) | 半導体集積回路装置 | |
| TW301800B (en) | Manufacturing method of thin-film transistor | |
| JP3007765B2 (ja) | 半導体装置及びその製造方法 | |
| JPH04294582A (ja) | 半導体装置の製造方法 | |
| JPS6023504B2 (ja) | 半導体メモリ装置 | |
| TW445518B (en) | Reversed metal oxide semiconductor | |
| KR0165305B1 (ko) | 반도체 메모리장치 및 그 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |