JPH08306678A - 半導体装置の製造方法及び半導体装置 - Google Patents

半導体装置の製造方法及び半導体装置

Info

Publication number
JPH08306678A
JPH08306678A JP7109585A JP10958595A JPH08306678A JP H08306678 A JPH08306678 A JP H08306678A JP 7109585 A JP7109585 A JP 7109585A JP 10958595 A JP10958595 A JP 10958595A JP H08306678 A JPH08306678 A JP H08306678A
Authority
JP
Japan
Prior art keywords
film
oxide film
silicon
silicon substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7109585A
Other languages
English (en)
Japanese (ja)
Inventor
Hideo Miura
英生 三浦
Shuji Ikeda
修二 池田
Norio Suzuki
範夫 鈴木
Naoto Saito
直人 斉藤
Asao Nishimura
朝雄 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7109585A priority Critical patent/JPH08306678A/ja
Priority to TW085105149A priority patent/TW326099B/zh
Priority to KR1019970707841A priority patent/KR19990008315A/ko
Priority to PCT/JP1996/001193 priority patent/WO1996036073A1/ja
Priority to IN824CA1996 priority patent/IN187708B/en
Priority to MYPI96001700A priority patent/MY132186A/en
Publication of JPH08306678A publication Critical patent/JPH08306678A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)
JP7109585A 1995-05-08 1995-05-08 半導体装置の製造方法及び半導体装置 Pending JPH08306678A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP7109585A JPH08306678A (ja) 1995-05-08 1995-05-08 半導体装置の製造方法及び半導体装置
TW085105149A TW326099B (en) 1995-05-08 1996-04-30 Semiconductor device and the process of manufacturing the same
KR1019970707841A KR19990008315A (ko) 1995-05-08 1996-05-01 반도체장치 및 그 제조방법
PCT/JP1996/001193 WO1996036073A1 (fr) 1995-05-08 1996-05-01 Dispositif a semi-conducteur et sa fabrication
IN824CA1996 IN187708B (enrdf_load_stackoverflow) 1995-05-08 1996-05-06
MYPI96001700A MY132186A (en) 1995-05-08 1996-05-06 Semiconductor device and process for producing the same.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7109585A JPH08306678A (ja) 1995-05-08 1995-05-08 半導体装置の製造方法及び半導体装置

Publications (1)

Publication Number Publication Date
JPH08306678A true JPH08306678A (ja) 1996-11-22

Family

ID=14514002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7109585A Pending JPH08306678A (ja) 1995-05-08 1995-05-08 半導体装置の製造方法及び半導体装置

Country Status (6)

Country Link
JP (1) JPH08306678A (enrdf_load_stackoverflow)
KR (1) KR19990008315A (enrdf_load_stackoverflow)
IN (1) IN187708B (enrdf_load_stackoverflow)
MY (1) MY132186A (enrdf_load_stackoverflow)
TW (1) TW326099B (enrdf_load_stackoverflow)
WO (1) WO1996036073A1 (enrdf_load_stackoverflow)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51139263A (en) * 1975-05-28 1976-12-01 Hitachi Ltd Method of selective oxidation of silicon substrate
JPS5249771A (en) * 1975-10-17 1977-04-21 Matsushita Electric Ind Co Ltd Process for production of semiconductor device
JPS5739551A (en) * 1980-08-21 1982-03-04 Seiko Epson Corp Manufacture of selectively oxidized mask
JPH0628282B2 (ja) * 1984-09-19 1994-04-13 ソニー株式会社 半導体装置の製造方法
JP3403210B2 (ja) * 1992-02-14 2003-05-06 富士通株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
KR19990008315A (ko) 1999-01-25
TW326099B (en) 1998-02-01
WO1996036073A1 (fr) 1996-11-14
IN187708B (enrdf_load_stackoverflow) 2002-06-08
MY132186A (en) 2007-09-28

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