JPH0338733B2 - - Google Patents

Info

Publication number
JPH0338733B2
JPH0338733B2 JP61280591A JP28059186A JPH0338733B2 JP H0338733 B2 JPH0338733 B2 JP H0338733B2 JP 61280591 A JP61280591 A JP 61280591A JP 28059186 A JP28059186 A JP 28059186A JP H0338733 B2 JPH0338733 B2 JP H0338733B2
Authority
JP
Japan
Prior art keywords
oxidation
film
resistant film
opening
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61280591A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63136548A (ja
Inventor
Tomohisa Mizuno
Shizuo Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP28059186A priority Critical patent/JPS63136548A/ja
Publication of JPS63136548A publication Critical patent/JPS63136548A/ja
Publication of JPH0338733B2 publication Critical patent/JPH0338733B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP28059186A 1986-11-27 1986-11-27 半導体装置の製造方法 Granted JPS63136548A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28059186A JPS63136548A (ja) 1986-11-27 1986-11-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28059186A JPS63136548A (ja) 1986-11-27 1986-11-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS63136548A JPS63136548A (ja) 1988-06-08
JPH0338733B2 true JPH0338733B2 (enrdf_load_stackoverflow) 1991-06-11

Family

ID=17627162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28059186A Granted JPS63136548A (ja) 1986-11-27 1986-11-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS63136548A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960011859B1 (ko) * 1993-04-22 1996-09-03 현대전자산업 주식회사 반도체 소자의 필드 산화막 형성방법
KR960006976B1 (ko) * 1993-05-21 1996-05-25 현대전자산업주식회사 반도체 소자의 필드 산화막 제조 방법
KR960006975B1 (ko) * 1993-05-21 1996-05-25 현대전자산업주식회사 반도체 소자의 필드 산화막 형성 방법
US5679600A (en) * 1995-10-11 1997-10-21 Micron Technology, Inc. Double locos for submicron isolation

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068631A (ja) * 1983-09-26 1985-04-19 Toshiba Corp 半導体装置の製造方法
JPS6144442A (ja) * 1984-08-08 1986-03-04 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS63136548A (ja) 1988-06-08

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