JPS63136548A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS63136548A JPS63136548A JP28059186A JP28059186A JPS63136548A JP S63136548 A JPS63136548 A JP S63136548A JP 28059186 A JP28059186 A JP 28059186A JP 28059186 A JP28059186 A JP 28059186A JP S63136548 A JPS63136548 A JP S63136548A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxidation
- nitride film
- resistant film
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 150000004767 nitrides Chemical class 0.000 claims abstract description 32
- 230000003647 oxidation Effects 0.000 claims abstract description 31
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 238000001312 dry etching Methods 0.000 abstract description 2
- 230000008719 thickening Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 210000003323 beak Anatomy 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 241000293849 Cordylanthus Species 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002757 inflammatory effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28059186A JPS63136548A (ja) | 1986-11-27 | 1986-11-27 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28059186A JPS63136548A (ja) | 1986-11-27 | 1986-11-27 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63136548A true JPS63136548A (ja) | 1988-06-08 |
| JPH0338733B2 JPH0338733B2 (enrdf_load_stackoverflow) | 1991-06-11 |
Family
ID=17627162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28059186A Granted JPS63136548A (ja) | 1986-11-27 | 1986-11-27 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63136548A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5397733A (en) * | 1993-05-21 | 1995-03-14 | Hyundai Electronics Industries Co., Ltd. | Method for the construction of field oxide film in semiconductor device |
| US5403770A (en) * | 1993-04-22 | 1995-04-04 | Hyundai Electronics Industries Co., Ltd. | Method for forming a field oxide film in a semiconductor device |
| US5445990A (en) * | 1993-05-21 | 1995-08-29 | Hyundai Electronics Industries Co., Ltd. | Method for forming a field oxide film in a semiconductor device |
| US5679600A (en) * | 1995-10-11 | 1997-10-21 | Micron Technology, Inc. | Double locos for submicron isolation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6068631A (ja) * | 1983-09-26 | 1985-04-19 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6144442A (ja) * | 1984-08-08 | 1986-03-04 | Nec Corp | 半導体装置の製造方法 |
-
1986
- 1986-11-27 JP JP28059186A patent/JPS63136548A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6068631A (ja) * | 1983-09-26 | 1985-04-19 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6144442A (ja) * | 1984-08-08 | 1986-03-04 | Nec Corp | 半導体装置の製造方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5403770A (en) * | 1993-04-22 | 1995-04-04 | Hyundai Electronics Industries Co., Ltd. | Method for forming a field oxide film in a semiconductor device |
| US5397733A (en) * | 1993-05-21 | 1995-03-14 | Hyundai Electronics Industries Co., Ltd. | Method for the construction of field oxide film in semiconductor device |
| JPH0799190A (ja) * | 1993-05-21 | 1995-04-11 | Hyundai Electron Ind Co Ltd | 半導体素子フィールド酸化膜の製造方法 |
| US5445990A (en) * | 1993-05-21 | 1995-08-29 | Hyundai Electronics Industries Co., Ltd. | Method for forming a field oxide film in a semiconductor device |
| US5679600A (en) * | 1995-10-11 | 1997-10-21 | Micron Technology, Inc. | Double locos for submicron isolation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0338733B2 (enrdf_load_stackoverflow) | 1991-06-11 |
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