JPS63136548A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS63136548A
JPS63136548A JP28059186A JP28059186A JPS63136548A JP S63136548 A JPS63136548 A JP S63136548A JP 28059186 A JP28059186 A JP 28059186A JP 28059186 A JP28059186 A JP 28059186A JP S63136548 A JPS63136548 A JP S63136548A
Authority
JP
Japan
Prior art keywords
film
oxidation
resistant film
nitride film
resistant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28059186A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0338733B2 (enrdf_load_stackoverflow
Inventor
Tomohisa Mizuno
智久 水野
Shizuo Sawada
沢田　静雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP28059186A priority Critical patent/JPS63136548A/ja
Publication of JPS63136548A publication Critical patent/JPS63136548A/ja
Publication of JPH0338733B2 publication Critical patent/JPH0338733B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP28059186A 1986-11-27 1986-11-27 半導体装置の製造方法 Granted JPS63136548A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28059186A JPS63136548A (ja) 1986-11-27 1986-11-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28059186A JPS63136548A (ja) 1986-11-27 1986-11-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS63136548A true JPS63136548A (ja) 1988-06-08
JPH0338733B2 JPH0338733B2 (enrdf_load_stackoverflow) 1991-06-11

Family

ID=17627162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28059186A Granted JPS63136548A (ja) 1986-11-27 1986-11-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS63136548A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397733A (en) * 1993-05-21 1995-03-14 Hyundai Electronics Industries Co., Ltd. Method for the construction of field oxide film in semiconductor device
US5403770A (en) * 1993-04-22 1995-04-04 Hyundai Electronics Industries Co., Ltd. Method for forming a field oxide film in a semiconductor device
US5445990A (en) * 1993-05-21 1995-08-29 Hyundai Electronics Industries Co., Ltd. Method for forming a field oxide film in a semiconductor device
US5679600A (en) * 1995-10-11 1997-10-21 Micron Technology, Inc. Double locos for submicron isolation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068631A (ja) * 1983-09-26 1985-04-19 Toshiba Corp 半導体装置の製造方法
JPS6144442A (ja) * 1984-08-08 1986-03-04 Nec Corp 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068631A (ja) * 1983-09-26 1985-04-19 Toshiba Corp 半導体装置の製造方法
JPS6144442A (ja) * 1984-08-08 1986-03-04 Nec Corp 半導体装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5403770A (en) * 1993-04-22 1995-04-04 Hyundai Electronics Industries Co., Ltd. Method for forming a field oxide film in a semiconductor device
US5397733A (en) * 1993-05-21 1995-03-14 Hyundai Electronics Industries Co., Ltd. Method for the construction of field oxide film in semiconductor device
JPH0799190A (ja) * 1993-05-21 1995-04-11 Hyundai Electron Ind Co Ltd 半導体素子フィールド酸化膜の製造方法
US5445990A (en) * 1993-05-21 1995-08-29 Hyundai Electronics Industries Co., Ltd. Method for forming a field oxide film in a semiconductor device
US5679600A (en) * 1995-10-11 1997-10-21 Micron Technology, Inc. Double locos for submicron isolation

Also Published As

Publication number Publication date
JPH0338733B2 (enrdf_load_stackoverflow) 1991-06-11

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