JPH08250423A - 多結晶シリコンの製造方法 - Google Patents
多結晶シリコンの製造方法Info
- Publication number
- JPH08250423A JPH08250423A JP7339545A JP33954595A JPH08250423A JP H08250423 A JPH08250423 A JP H08250423A JP 7339545 A JP7339545 A JP 7339545A JP 33954595 A JP33954595 A JP 33954595A JP H08250423 A JPH08250423 A JP H08250423A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- substrate
- producing polycrystalline
- metal
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 238000000151 deposition Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000011521 glass Substances 0.000 claims abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 34
- 239000000243 solution Substances 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 25
- 239000010949 copper Substances 0.000 claims description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 18
- 229910052737 gold Inorganic materials 0.000 claims description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract description 26
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- -1 that is Inorganic materials 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1994-38136 | 1994-12-28 | ||
| KR1019940038136A KR0144643B1 (ko) | 1994-12-28 | 1994-12-28 | 금속흡착법에 의한 다결정 규소박막의 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08250423A true JPH08250423A (ja) | 1996-09-27 |
Family
ID=19404427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7339545A Pending JPH08250423A (ja) | 1994-12-28 | 1995-12-26 | 多結晶シリコンの製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH08250423A (ko) |
| KR (1) | KR0144643B1 (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003017407A (ja) * | 2001-06-28 | 2003-01-17 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| WO2011065688A3 (ko) * | 2009-11-27 | 2011-10-20 | 주식회사 테라세미콘 | 다결정 실리콘 형성 장치 및 그 방법 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100598291B1 (ko) * | 2000-06-20 | 2006-07-07 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 배선 형성 방법 |
| KR20030007024A (ko) * | 2001-07-11 | 2003-01-23 | 조진한 | 회전 코팅을 이용한 단층/다층 초박막의 제조방법 |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02148774A (ja) * | 1988-11-29 | 1990-06-07 | Kyocera Corp | 光センサーの製造方法 |
| JPH04291714A (ja) * | 1990-12-06 | 1992-10-15 | American Teleph & Telegr Co <Att> | アモルファス層を用いた集積回路製作 |
| JPH04293228A (ja) * | 1990-12-21 | 1992-10-16 | Siemens Ag | 多結晶シリコン層の製造方法 |
| JPH0555140A (ja) * | 1991-08-22 | 1993-03-05 | Sharp Corp | 多結晶シリコン膜の作製方法 |
| JPH05182919A (ja) * | 1992-01-07 | 1993-07-23 | Fujitsu Ltd | 多結晶シリコン薄膜の製造方法 |
| JPH05291149A (ja) * | 1992-04-13 | 1993-11-05 | Canon Inc | プラズマｃｖｄ装置 |
| JPH06244103A (ja) * | 1993-02-15 | 1994-09-02 | Semiconductor Energy Lab Co Ltd | 半導体の製造方法 |
| JPH06333825A (ja) * | 1993-05-21 | 1994-12-02 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPH06349734A (ja) * | 1993-06-12 | 1994-12-22 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JPH07211636A (ja) * | 1993-12-03 | 1995-08-11 | Semiconductor Energy Lab Co Ltd | 半導体作製方法およびその作製装置 |
| JPH08167572A (ja) * | 1994-12-09 | 1996-06-25 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法および結晶成長促進剤 |
-
1994
- 1994-12-28 KR KR1019940038136A patent/KR0144643B1/ko not_active IP Right Cessation
-
1995
- 1995-12-26 JP JP7339545A patent/JPH08250423A/ja active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02148774A (ja) * | 1988-11-29 | 1990-06-07 | Kyocera Corp | 光センサーの製造方法 |
| JPH04291714A (ja) * | 1990-12-06 | 1992-10-15 | American Teleph & Telegr Co <Att> | アモルファス層を用いた集積回路製作 |
| JPH04293228A (ja) * | 1990-12-21 | 1992-10-16 | Siemens Ag | 多結晶シリコン層の製造方法 |
| JPH0555140A (ja) * | 1991-08-22 | 1993-03-05 | Sharp Corp | 多結晶シリコン膜の作製方法 |
| JPH05182919A (ja) * | 1992-01-07 | 1993-07-23 | Fujitsu Ltd | 多結晶シリコン薄膜の製造方法 |
| JPH05291149A (ja) * | 1992-04-13 | 1993-11-05 | Canon Inc | プラズマｃｖｄ装置 |
| JPH06244103A (ja) * | 1993-02-15 | 1994-09-02 | Semiconductor Energy Lab Co Ltd | 半導体の製造方法 |
| JPH06333825A (ja) * | 1993-05-21 | 1994-12-02 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPH06349734A (ja) * | 1993-06-12 | 1994-12-22 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JPH07211636A (ja) * | 1993-12-03 | 1995-08-11 | Semiconductor Energy Lab Co Ltd | 半導体作製方法およびその作製装置 |
| JPH08167572A (ja) * | 1994-12-09 | 1996-06-25 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法および結晶成長促進剤 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003017407A (ja) * | 2001-06-28 | 2003-01-17 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| WO2011065688A3 (ko) * | 2009-11-27 | 2011-10-20 | 주식회사 테라세미콘 | 다결정 실리콘 형성 장치 및 그 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR0144643B1 (ko) | 1998-08-17 |
| KR960026120A (ko) | 1996-07-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19980223 |