WO2011065688A3 - 다결정 실리콘 형성 장치 및 그 방법 - Google Patents

다결정 실리콘 형성 장치 및 그 방법 Download PDF

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Publication number
WO2011065688A3
WO2011065688A3 PCT/KR2010/007872 KR2010007872W WO2011065688A3 WO 2011065688 A3 WO2011065688 A3 WO 2011065688A3 KR 2010007872 W KR2010007872 W KR 2010007872W WO 2011065688 A3 WO2011065688 A3 WO 2011065688A3
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WO
WIPO (PCT)
Prior art keywords
polycrystalline silicon
forming polycrystalline
amorphous silicon
disclosed
heat treating
Prior art date
Application number
PCT/KR2010/007872
Other languages
English (en)
French (fr)
Other versions
WO2011065688A2 (ko
Inventor
이병일
박경완
허관선
강호영
송종호
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Priority to JP2012541008A priority Critical patent/JP2013512561A/ja
Priority to CN2010800514306A priority patent/CN102639765A/zh
Publication of WO2011065688A2 publication Critical patent/WO2011065688A2/ko
Publication of WO2011065688A3 publication Critical patent/WO2011065688A3/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

다결정 실리콘 형성 장치가 개시된다. 본 발명에 따른 장치는, 기판 상에 형성된 비정질 실리콘을 열처리하여 다결정 실리콘을 형성하는 장치로서, 비정질 실리콘을 예열(pre-heating)하는 예열부(200); 및 예열부(200)에서 예열된 비정질 실리콘을 결정화 열처리하는 열처리부(300)를 포함하는 것을 특징으로 한다.
PCT/KR2010/007872 2009-11-27 2010-11-09 다결정 실리콘 형성 장치 및 그 방법 WO2011065688A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012541008A JP2013512561A (ja) 2009-11-27 2010-11-09 多結晶シリコン形成装置及びその方法
CN2010800514306A CN102639765A (zh) 2009-11-27 2010-11-09 多晶硅形成装置及其方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0115762 2009-11-27
KR1020090115762A KR101167998B1 (ko) 2009-11-27 2009-11-27 다결정 실리콘 형성 장치 및 그 방법

Publications (2)

Publication Number Publication Date
WO2011065688A2 WO2011065688A2 (ko) 2011-06-03
WO2011065688A3 true WO2011065688A3 (ko) 2011-10-20

Family

ID=44067050

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/007872 WO2011065688A2 (ko) 2009-11-27 2010-11-09 다결정 실리콘 형성 장치 및 그 방법

Country Status (5)

Country Link
JP (1) JP2013512561A (ko)
KR (1) KR101167998B1 (ko)
CN (1) CN102639765A (ko)
TW (1) TW201126033A (ko)
WO (1) WO2011065688A2 (ko)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250423A (ja) * 1994-12-28 1996-09-27 Lg Electron Inc 多結晶シリコンの製造方法
JP2000031056A (ja) * 1998-07-13 2000-01-28 Fujitsu Ltd 多結晶薄膜の形成方法及び形成装置
US20070122936A1 (en) * 2004-04-01 2007-05-31 Viatron Technologies Inc. System for heat treatment of semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101015597B1 (ko) * 2004-05-12 2011-02-17 주식회사 비아트론 반도체 소자의 열처리 장치
WO2007013605A1 (ja) * 2005-07-28 2007-02-01 Tokyo Electron Limited 基板処理方法および基板処理装置
KR100840015B1 (ko) * 2007-01-31 2008-06-20 주식회사 테라세미콘 비정질 실리콘 결정화를 위한 열처리 시스템

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08250423A (ja) * 1994-12-28 1996-09-27 Lg Electron Inc 多結晶シリコンの製造方法
JP2000031056A (ja) * 1998-07-13 2000-01-28 Fujitsu Ltd 多結晶薄膜の形成方法及び形成装置
US20070122936A1 (en) * 2004-04-01 2007-05-31 Viatron Technologies Inc. System for heat treatment of semiconductor device

Also Published As

Publication number Publication date
KR101167998B1 (ko) 2012-07-26
CN102639765A (zh) 2012-08-15
KR20110059126A (ko) 2011-06-02
WO2011065688A2 (ko) 2011-06-03
TW201126033A (en) 2011-08-01
JP2013512561A (ja) 2013-04-11

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