JPH0713973B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPH0713973B2
JPH0713973B2 JP1014238A JP1423889A JPH0713973B2 JP H0713973 B2 JPH0713973 B2 JP H0713973B2 JP 1014238 A JP1014238 A JP 1014238A JP 1423889 A JP1423889 A JP 1423889A JP H0713973 B2 JPH0713973 B2 JP H0713973B2
Authority
JP
Japan
Prior art keywords
layer
silicon
region
silicon nitride
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1014238A
Other languages
English (en)
Japanese (ja)
Other versions
JPH025432A (ja
Inventor
ヨハネス・ウィルヘルムス・アドリアヌス・ファン・デル・フェルデン
ヘンリカス・フォデフリダス・ラフェール・マース
マルクゥエリテ・マリア・カタリーナ・ファン・イエルセル―スヒッフマヒエル
Original Assignee
エヌ・ベー・フィリップス・フルーイランペンファブリケン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エヌ・ベー・フィリップス・フルーイランペンファブリケン filed Critical エヌ・ベー・フィリップス・フルーイランペンファブリケン
Publication of JPH025432A publication Critical patent/JPH025432A/ja
Publication of JPH0713973B2 publication Critical patent/JPH0713973B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/125—Polycrystalline passivation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
JP1014238A 1988-01-25 1989-01-25 半導体装置の製造方法 Expired - Lifetime JPH0713973B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8800157A NL8800157A (nl) 1988-01-25 1988-01-25 Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
NL8800157 1988-01-25

Publications (2)

Publication Number Publication Date
JPH025432A JPH025432A (ja) 1990-01-10
JPH0713973B2 true JPH0713973B2 (ja) 1995-02-15

Family

ID=19851645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1014238A Expired - Lifetime JPH0713973B2 (ja) 1988-01-25 1989-01-25 半導体装置の製造方法

Country Status (7)

Country Link
US (2) US4969026A (de)
EP (1) EP0326211B1 (de)
JP (1) JPH0713973B2 (de)
KR (1) KR970011641B1 (de)
CN (1) CN1018112B (de)
DE (1) DE68916045T2 (de)
NL (1) NL8800157A (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6147425A (ja) * 1984-08-10 1986-03-07 Sumitomo Chem Co Ltd パラ選択的脱アルキル化方法
US5150184A (en) * 1989-02-03 1992-09-22 Texas Instruments Incorporated Method for forming emitters in a BiCMOS process
US5221856A (en) * 1989-04-05 1993-06-22 U.S. Philips Corp. Bipolar transistor with floating guard region under extrinsic base
JPH03206621A (ja) * 1990-01-09 1991-09-10 Oki Electric Ind Co Ltd 半導体集積回路装置の製造方法
JP2971246B2 (ja) * 1992-04-15 1999-11-02 株式会社東芝 ヘテロバイポーラトランジスタの製造方法
GB2296377A (en) * 1994-12-20 1996-06-26 Korea Electronics Telecomm Pillar bipolar transistors
US5869881A (en) * 1994-12-20 1999-02-09 Electronics And Telecommunications Research Institute Pillar bipolar transistor
KR0171000B1 (ko) * 1995-12-15 1999-02-01 양승택 자동 정의된 베이스 전극을 갖는 바이폴라 트랜지스터 구조 및 그 제조방법
KR0182000B1 (ko) * 1995-12-28 1999-04-15 김광호 바이폴라 트랜지스터의 제조방법
FR2756974B1 (fr) 1996-12-10 1999-06-04 Sgs Thomson Microelectronics Transistor bipolaire a isolement par caisson
US6309975B1 (en) 1997-03-14 2001-10-30 Micron Technology, Inc. Methods of making implanted structures
EP1128422A1 (de) * 2000-02-22 2001-08-29 Infineon Technologies AG Verfahren zur Herstellung eines bipolaren Transistors im BiCMOS-Prozess
CN108063162B (zh) * 2017-12-18 2020-08-28 南京溧水高新创业投资管理有限公司 双极晶体管的制作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62281469A (ja) * 1986-05-30 1987-12-07 Hitachi Ltd 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE31580E (en) * 1967-06-08 1984-05-01 U.S. Philips Corporation Insulated gate field-effect transistor comprising a mesa channel and a thicker surrounding oxide
JPS561556A (en) * 1979-06-18 1981-01-09 Hitachi Ltd Semiconductor device
US4338138A (en) * 1980-03-03 1982-07-06 International Business Machines Corporation Process for fabricating a bipolar transistor
JPS61164262A (ja) * 1985-01-17 1986-07-24 Toshiba Corp 半導体装置
JPS61166071A (ja) * 1985-01-17 1986-07-26 Toshiba Corp 半導体装置及びその製造方法
DE3683183D1 (de) * 1985-04-10 1992-02-13 Fujitsu Ltd Verfahren zum herstellen eines selbtsausrichtenden bipolartransistors.
US4746623A (en) * 1986-01-29 1988-05-24 Signetics Corporation Method of making bipolar semiconductor device with wall spacer
US4680085A (en) * 1986-04-14 1987-07-14 Ovonic Imaging Systems, Inc. Method of forming thin film semiconductor devices
JPS6362272A (ja) * 1986-09-02 1988-03-18 Seiko Instr & Electronics Ltd 半導体装置の製造方法
JPS63215068A (ja) * 1987-03-04 1988-09-07 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JPS6489365A (en) * 1987-09-29 1989-04-03 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62281469A (ja) * 1986-05-30 1987-12-07 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
KR970011641B1 (ko) 1997-07-12
JPH025432A (ja) 1990-01-10
US4969026A (en) 1990-11-06
DE68916045T2 (de) 1995-03-23
EP0326211A1 (de) 1989-08-02
NL8800157A (nl) 1989-08-16
US5024956A (en) 1991-06-18
KR890012359A (ko) 1989-08-26
DE68916045D1 (de) 1994-07-21
EP0326211B1 (de) 1994-06-15
CN1018112B (zh) 1992-09-02
CN1034827A (zh) 1989-08-16

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