NL8800157A - Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. - Google Patents
Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. Download PDFInfo
- Publication number
- NL8800157A NL8800157A NL8800157A NL8800157A NL8800157A NL 8800157 A NL8800157 A NL 8800157A NL 8800157 A NL8800157 A NL 8800157A NL 8800157 A NL8800157 A NL 8800157A NL 8800157 A NL8800157 A NL 8800157A
- Authority
- NL
- Netherlands
- Prior art keywords
- silicon
- layer
- zone
- oxide
- nitride layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims description 158
- 229910052710 silicon Inorganic materials 0.000 claims description 70
- 239000010703 silicon Substances 0.000 claims description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 68
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 33
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229910052796 boron Inorganic materials 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- -1 boron ions Chemical class 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/125—Polycrystalline passivation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8800157A NL8800157A (nl) | 1988-01-25 | 1988-01-25 | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
| EP89200110A EP0326211B1 (de) | 1988-01-25 | 1989-01-19 | Halbleiteranordnung und Verfahren zum Herstellen derselben |
| DE68916045T DE68916045T2 (de) | 1988-01-25 | 1989-01-19 | Halbleiteranordnung und Verfahren zum Herstellen derselben. |
| KR1019890000679A KR970011641B1 (ko) | 1988-01-25 | 1989-01-23 | 반도체 장치 및 제조방법 |
| CN89100478A CN1018112B (zh) | 1988-01-25 | 1989-01-23 | 半导体器件及其制造方法 |
| JP1014238A JPH0713973B2 (ja) | 1988-01-25 | 1989-01-25 | 半導体装置の製造方法 |
| US07/506,484 US4969026A (en) | 1988-01-25 | 1990-04-06 | Mesa bipolar transistor with edge contacts |
| US07/534,774 US5024956A (en) | 1988-01-25 | 1990-06-07 | Method of manufacturing a semiconductor device including mesa bipolar transistor with edge contacts |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8800157A NL8800157A (nl) | 1988-01-25 | 1988-01-25 | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
| NL8800157 | 1988-01-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8800157A true NL8800157A (nl) | 1989-08-16 |
Family
ID=19851645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8800157A NL8800157A (nl) | 1988-01-25 | 1988-01-25 | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US4969026A (de) |
| EP (1) | EP0326211B1 (de) |
| JP (1) | JPH0713973B2 (de) |
| KR (1) | KR970011641B1 (de) |
| CN (1) | CN1018112B (de) |
| DE (1) | DE68916045T2 (de) |
| NL (1) | NL8800157A (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6147425A (ja) * | 1984-08-10 | 1986-03-07 | Sumitomo Chem Co Ltd | パラ選択的脱アルキル化方法 |
| US5150184A (en) * | 1989-02-03 | 1992-09-22 | Texas Instruments Incorporated | Method for forming emitters in a BiCMOS process |
| US5221856A (en) * | 1989-04-05 | 1993-06-22 | U.S. Philips Corp. | Bipolar transistor with floating guard region under extrinsic base |
| JPH03206621A (ja) * | 1990-01-09 | 1991-09-10 | Oki Electric Ind Co Ltd | 半導体集積回路装置の製造方法 |
| JP2971246B2 (ja) * | 1992-04-15 | 1999-11-02 | 株式会社東芝 | ヘテロバイポーラトランジスタの製造方法 |
| DE4445565C2 (de) * | 1994-12-20 | 2002-10-24 | Korea Electronics Telecomm | Säulen-Bipolartransistor und Verfahren zu seiner Herstellung |
| US5869881A (en) * | 1994-12-20 | 1999-02-09 | Electronics And Telecommunications Research Institute | Pillar bipolar transistor |
| KR0171000B1 (ko) * | 1995-12-15 | 1999-02-01 | 양승택 | 자동 정의된 베이스 전극을 갖는 바이폴라 트랜지스터 구조 및 그 제조방법 |
| KR0182000B1 (ko) * | 1995-12-28 | 1999-04-15 | 김광호 | 바이폴라 트랜지스터의 제조방법 |
| FR2756974B1 (fr) | 1996-12-10 | 1999-06-04 | Sgs Thomson Microelectronics | Transistor bipolaire a isolement par caisson |
| US6309975B1 (en) | 1997-03-14 | 2001-10-30 | Micron Technology, Inc. | Methods of making implanted structures |
| EP1128422A1 (de) * | 2000-02-22 | 2001-08-29 | Infineon Technologies AG | Verfahren zur Herstellung eines bipolaren Transistors im BiCMOS-Prozess |
| CN108063162B (zh) * | 2017-12-18 | 2020-08-28 | 南京溧水高新创业投资管理有限公司 | 双极晶体管的制作方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE31580E (en) * | 1967-06-08 | 1984-05-01 | U.S. Philips Corporation | Insulated gate field-effect transistor comprising a mesa channel and a thicker surrounding oxide |
| JPS561556A (en) * | 1979-06-18 | 1981-01-09 | Hitachi Ltd | Semiconductor device |
| US4338138A (en) * | 1980-03-03 | 1982-07-06 | International Business Machines Corporation | Process for fabricating a bipolar transistor |
| JPS61164262A (ja) * | 1985-01-17 | 1986-07-24 | Toshiba Corp | 半導体装置 |
| JPS61166071A (ja) * | 1985-01-17 | 1986-07-26 | Toshiba Corp | 半導体装置及びその製造方法 |
| EP0199497B1 (de) * | 1985-04-10 | 1992-01-02 | Fujitsu Limited | Verfahren zum Herstellen eines selbtsausrichtenden Bipolartransistors |
| JPH0834215B2 (ja) * | 1986-05-30 | 1996-03-29 | 株式会社日立製作所 | 半導体装置 |
| US4746623A (en) * | 1986-01-29 | 1988-05-24 | Signetics Corporation | Method of making bipolar semiconductor device with wall spacer |
| US4680085A (en) * | 1986-04-14 | 1987-07-14 | Ovonic Imaging Systems, Inc. | Method of forming thin film semiconductor devices |
| JPS6362272A (ja) * | 1986-09-02 | 1988-03-18 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
| JPS63215068A (ja) * | 1987-03-04 | 1988-09-07 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
| JPS6489365A (en) * | 1987-09-29 | 1989-04-03 | Nec Corp | Semiconductor device |
-
1988
- 1988-01-25 NL NL8800157A patent/NL8800157A/nl not_active Application Discontinuation
-
1989
- 1989-01-19 EP EP89200110A patent/EP0326211B1/de not_active Expired - Lifetime
- 1989-01-19 DE DE68916045T patent/DE68916045T2/de not_active Expired - Fee Related
- 1989-01-23 KR KR1019890000679A patent/KR970011641B1/ko not_active IP Right Cessation
- 1989-01-23 CN CN89100478A patent/CN1018112B/zh not_active Expired
- 1989-01-25 JP JP1014238A patent/JPH0713973B2/ja not_active Expired - Lifetime
-
1990
- 1990-04-06 US US07/506,484 patent/US4969026A/en not_active Expired - Fee Related
- 1990-06-07 US US07/534,774 patent/US5024956A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5024956A (en) | 1991-06-18 |
| CN1034827A (zh) | 1989-08-16 |
| DE68916045D1 (de) | 1994-07-21 |
| DE68916045T2 (de) | 1995-03-23 |
| EP0326211B1 (de) | 1994-06-15 |
| US4969026A (en) | 1990-11-06 |
| KR890012359A (ko) | 1989-08-26 |
| JPH0713973B2 (ja) | 1995-02-15 |
| JPH025432A (ja) | 1990-01-10 |
| EP0326211A1 (de) | 1989-08-02 |
| KR970011641B1 (ko) | 1997-07-12 |
| CN1018112B (zh) | 1992-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4033026A (en) | High density/high speed MOS process and device | |
| EP0083816B1 (de) | Halbleiteranordnung mit einem Verbindungsmuster | |
| NL8800157A (nl) | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. | |
| JPH0640582B2 (ja) | 絶縁ゲ−ト電界効果トランジスタの製造方法 | |
| US5047357A (en) | Method for forming emitters in a BiCMOS process | |
| US4466171A (en) | Method of manufacturing a semiconductor device utilizing outdiffusion to convert an epitaxial layer | |
| US4641419A (en) | Fabricating an integrated circuit device having a vertical pnp transistor | |
| NL8701251A (nl) | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. | |
| US5106765A (en) | Process for making a bimos | |
| NL8402859A (nl) | Werkwijze voor het vervaardigen van submicrongroeven in bijvoorbeeld halfgeleidermateriaal en met deze werkwijze verkregen inrichtingen. | |
| US4485552A (en) | Complementary transistor structure and method for manufacture | |
| JPH0719882B2 (ja) | 光電変換装置 | |
| US4757027A (en) | Method for fabricating improved oxide defined transistors | |
| US4362574A (en) | Integrated circuit and manufacturing method | |
| US4894702A (en) | High efficiency, small geometry semiconductor devices | |
| US5150184A (en) | Method for forming emitters in a BiCMOS process | |
| US4132573A (en) | Method of manufacturing a monolithic integrated circuit utilizing epitaxial deposition and simultaneous outdiffusion | |
| JPS60261171A (ja) | Ｍｏｓトランジスタ | |
| JP2729870B2 (ja) | 可変容量ダイオードとその製造方法 | |
| KR940004257B1 (ko) | 바이폴라 트랜지스터의 제조방법 | |
| JPS61292327A (ja) | 半導体装置の製造方法 | |
| GB2034114A (en) | Method of manufacturing a V- groove IGFET | |
| JPS6129151B2 (de) | ||
| JPS6259465B2 (de) | ||
| JPH04352478A (ja) | 可変容量ダイオード |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |