JPH0621029A - 半導体ウェハの化学的−機械的研磨装置およびそれを用いた方法 - Google Patents

半導体ウェハの化学的−機械的研磨装置およびそれを用いた方法

Info

Publication number
JPH0621029A
JPH0621029A JP4450093A JP4450093A JPH0621029A JP H0621029 A JPH0621029 A JP H0621029A JP 4450093 A JP4450093 A JP 4450093A JP 4450093 A JP4450093 A JP 4450093A JP H0621029 A JPH0621029 A JP H0621029A
Authority
JP
Japan
Prior art keywords
polishing
chemical
polishing pad
pad
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP4450093A
Other languages
English (en)
Japanese (ja)
Inventor
Chris Jerbic
ジャービック クリス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LSI Corp
Original Assignee
LSI Logic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LSI Logic Corp filed Critical LSI Logic Corp
Publication of JPH0621029A publication Critical patent/JPH0621029A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B24B1/04—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes subjecting the grinding or polishing tools, the abrading or polishing medium or work to vibration, e.g. grinding with ultrasonic frequency
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
JP4450093A 1992-02-14 1993-02-09 半導体ウェハの化学的−機械的研磨装置およびそれを用いた方法 Withdrawn JPH0621029A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/837444 1992-02-14
US07/837,444 US5245790A (en) 1992-02-14 1992-02-14 Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers

Publications (1)

Publication Number Publication Date
JPH0621029A true JPH0621029A (ja) 1994-01-28

Family

ID=25274456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4450093A Withdrawn JPH0621029A (ja) 1992-02-14 1993-02-09 半導体ウェハの化学的−機械的研磨装置およびそれを用いた方法

Country Status (3)

Country Link
US (1) US5245790A (enExample)
JP (1) JPH0621029A (enExample)
DE (1) DE4304429A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH068134A (ja) * 1992-04-02 1994-01-18 American Teleph & Telegr Co <Att> 平面状物品の研磨装置
US5752875A (en) * 1995-12-14 1998-05-19 International Business Machines Corporation Method of chemically-mechanically polishing an electronic component
US5758208A (en) * 1995-12-28 1998-05-26 Olympus Optical Co., Ltd. Imaging apparatus
JP2006508545A (ja) * 2002-12-02 2006-03-09 アーケマ・インコーポレイテッド 銅の化学的機械的平坦化のための組成物および方法
JPWO2016108284A1 (ja) * 2014-12-31 2017-04-27 東邦エンジニアリング株式会社 触媒支援型化学加工方法および触媒支援型化学加工装置
US10770301B2 (en) 2016-03-11 2020-09-08 Toho Engineering Co., Ltd. Planarization processing device

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US5607341A (en) 1994-08-08 1997-03-04 Leach; Michael A. Method and structure for polishing a wafer during manufacture of integrated circuits
TW274625B (enExample) * 1994-09-30 1996-04-21 Hitachi Seisakusyo Kk
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5522965A (en) * 1994-12-12 1996-06-04 Texas Instruments Incorporated Compact system and method for chemical-mechanical polishing utilizing energy coupled to the polishing pad/water interface
US5688364A (en) * 1994-12-22 1997-11-18 Sony Corporation Chemical-mechanical polishing method and apparatus using ultrasound applied to the carrier and platen
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JPH0955362A (ja) * 1995-08-09 1997-02-25 Cypress Semiconductor Corp スクラッチを減少する集積回路の製造方法
US5890951A (en) * 1996-04-15 1999-04-06 Lsi Logic Corporation Utility wafer for chemical-mechanical planarization
US6115233A (en) * 1996-06-28 2000-09-05 Lsi Logic Corporation Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region
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US5957754A (en) * 1997-08-29 1999-09-28 Applied Materials, Inc. Cavitational polishing pad conditioner
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US6071818A (en) * 1998-06-30 2000-06-06 Lsi Logic Corporation Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material
US6285035B1 (en) 1998-07-08 2001-09-04 Lsi Logic Corporation Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method
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US6117779A (en) * 1998-12-15 2000-09-12 Lsi Logic Corporation Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint
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US6135863A (en) * 1999-04-20 2000-10-24 Memc Electronic Materials, Inc. Method of conditioning wafer polishing pads
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US6264532B1 (en) * 2000-03-28 2001-07-24 Speedfam-Ipec Corporation Ultrasonic methods and apparatus for the in-situ detection of workpiece loss
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Publication number Priority date Publication date Assignee Title
JPH068134A (ja) * 1992-04-02 1994-01-18 American Teleph & Telegr Co <Att> 平面状物品の研磨装置
US5752875A (en) * 1995-12-14 1998-05-19 International Business Machines Corporation Method of chemically-mechanically polishing an electronic component
US5758208A (en) * 1995-12-28 1998-05-26 Olympus Optical Co., Ltd. Imaging apparatus
JP2006508545A (ja) * 2002-12-02 2006-03-09 アーケマ・インコーポレイテッド 銅の化学的機械的平坦化のための組成物および方法
JPWO2016108284A1 (ja) * 2014-12-31 2017-04-27 東邦エンジニアリング株式会社 触媒支援型化学加工方法および触媒支援型化学加工装置
JP2017100280A (ja) * 2014-12-31 2017-06-08 東邦エンジニアリング株式会社 平坦加工方法および平坦加工装置
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US10665480B2 (en) 2014-12-31 2020-05-26 Osaka University Planarizing processing method and planarizing processing device
US10770301B2 (en) 2016-03-11 2020-09-08 Toho Engineering Co., Ltd. Planarization processing device

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