DE4304429A1 - - Google Patents

Info

Publication number
DE4304429A1
DE4304429A1 DE4304429A DE4304429A DE4304429A1 DE 4304429 A1 DE4304429 A1 DE 4304429A1 DE 4304429 A DE4304429 A DE 4304429A DE 4304429 A DE4304429 A DE 4304429A DE 4304429 A1 DE4304429 A1 DE 4304429A1
Authority
DE
Germany
Prior art keywords
polishing
plate
carrier
semiconductor wafer
polishing plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE4304429A
Other languages
German (de)
English (en)
Inventor
Chris Jerbic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LSI Corp
Original Assignee
LSI Logic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LSI Logic Corp filed Critical LSI Logic Corp
Publication of DE4304429A1 publication Critical patent/DE4304429A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B24B1/04—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes subjecting the grinding or polishing tools, the abrading or polishing medium or work to vibration, e.g. grinding with ultrasonic frequency
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
DE4304429A 1992-02-14 1993-02-14 Withdrawn DE4304429A1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/837,444 US5245790A (en) 1992-02-14 1992-02-14 Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers

Publications (1)

Publication Number Publication Date
DE4304429A1 true DE4304429A1 (enExample) 1993-09-16

Family

ID=25274456

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4304429A Withdrawn DE4304429A1 (enExample) 1992-02-14 1993-02-14

Country Status (3)

Country Link
US (1) US5245790A (enExample)
JP (1) JPH0621029A (enExample)
DE (1) DE4304429A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5783497A (en) * 1994-08-02 1998-07-21 Sematech, Inc. Forced-flow wafer polisher
DE19928950A1 (de) * 1999-06-24 2000-12-07 Wacker Siltronic Halbleitermat Verfahren zum Schleifen der Oberfläche eines Werkstücks
DE10060696A1 (de) * 2000-12-07 2002-06-27 Wacker Chemie Gmbh Vorrichtung und Verfahren zum ultraschallunterstützten Schleifen einer Werkstückkante
CN102962756A (zh) * 2012-12-12 2013-03-13 天津中环领先材料技术有限公司 一种可获得高抛光速率的单晶硅晶圆片抛光工艺
CN113118966A (zh) * 2019-12-31 2021-07-16 清华大学 一种用于化学机械抛光的承载头及其使用方法

Families Citing this family (117)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245796A (en) * 1992-04-02 1993-09-21 At&T Bell Laboratories Slurry polisher using ultrasonic agitation
US5310455A (en) * 1992-07-10 1994-05-10 Lsi Logic Corporation Techniques for assembling polishing pads for chemi-mechanical polishing of silicon wafers
US5551907A (en) * 1994-03-14 1996-09-03 Hughes Aircraft Company System for ultrasonic lap grinding and polishing
US5733175A (en) 1994-04-25 1998-03-31 Leach; Michael A. Polishing a workpiece using equal velocity at all points overlapping a polisher
US5562530A (en) * 1994-08-02 1996-10-08 Sematech, Inc. Pulsed-force chemical mechanical polishing
US5607341A (en) 1994-08-08 1997-03-04 Leach; Michael A. Method and structure for polishing a wafer during manufacture of integrated circuits
TW274625B (enExample) * 1994-09-30 1996-04-21 Hitachi Seisakusyo Kk
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5522965A (en) * 1994-12-12 1996-06-04 Texas Instruments Incorporated Compact system and method for chemical-mechanical polishing utilizing energy coupled to the polishing pad/water interface
US5688364A (en) * 1994-12-22 1997-11-18 Sony Corporation Chemical-mechanical polishing method and apparatus using ultrasound applied to the carrier and platen
US5945347A (en) 1995-06-02 1999-08-31 Micron Technology, Inc. Apparatus and method for polishing a semiconductor wafer in an overhanging position
JPH0955362A (ja) * 1995-08-09 1997-02-25 Cypress Semiconductor Corp スクラッチを減少する集積回路の製造方法
EP0779655A3 (en) * 1995-12-14 1997-07-16 International Business Machines Corporation A method of chemically-mechanically polishing an electronic component
JPH09185095A (ja) * 1995-12-28 1997-07-15 Olympus Optical Co Ltd 撮像装置
US5890951A (en) * 1996-04-15 1999-04-06 Lsi Logic Corporation Utility wafer for chemical-mechanical planarization
US6115233A (en) * 1996-06-28 2000-09-05 Lsi Logic Corporation Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region
US5868608A (en) 1996-08-13 1999-02-09 Lsi Logic Corporation Subsonic to supersonic and ultrasonic conditioning of a polishing pad in a chemical mechanical polishing apparatus
US5899801A (en) * 1996-10-31 1999-05-04 Applied Materials, Inc. Method and apparatus for removing a substrate from a polishing pad in a chemical mechanical polishing system
US5895550A (en) 1996-12-16 1999-04-20 Micron Technology, Inc. Ultrasonic processing of chemical mechanical polishing slurries
KR19980064179A (ko) * 1996-12-19 1998-10-07 윌리엄비.켐플러 웨이퍼 연마 공정시 실리콘 제거율을 안정화하는 방법
US5968851A (en) * 1997-03-19 1999-10-19 Cypress Semiconductor Corp. Controlled isotropic etch process and method of forming an opening in a dielectric layer
US5968841A (en) * 1997-05-06 1999-10-19 International Business Machines Corporation Device and method for preventing settlement of particles on a chemical-mechanical polishing pad
US5967881A (en) * 1997-05-29 1999-10-19 Tucker; Thomas N. Chemical mechanical planarization tool having a linear polishing roller
US6108093A (en) * 1997-06-04 2000-08-22 Lsi Logic Corporation Automated inspection system for residual metal after chemical-mechanical polishing
US5975994A (en) * 1997-06-11 1999-11-02 Micron Technology, Inc. Method and apparatus for selectively conditioning a polished pad used in planarizng substrates
US6069085A (en) 1997-07-23 2000-05-30 Lsi Logic Corporation Slurry filling a recess formed during semiconductor fabrication
US6093280A (en) * 1997-08-18 2000-07-25 Lsi Logic Corporation Chemical-mechanical polishing pad conditioning systems
US6168508B1 (en) 1997-08-25 2001-01-02 Lsi Logic Corporation Polishing pad surface for improved process control
US5957754A (en) * 1997-08-29 1999-09-28 Applied Materials, Inc. Cavitational polishing pad conditioner
JPH1187286A (ja) 1997-09-05 1999-03-30 Lsi Logic Corp 半導体ウエハの二段階式化学的機械的研磨方法及び装置
US6234883B1 (en) 1997-10-01 2001-05-22 Lsi Logic Corporation Method and apparatus for concurrent pad conditioning and wafer buff in chemical mechanical polishing
US6106371A (en) * 1997-10-30 2000-08-22 Lsi Logic Corporation Effective pad conditioning
US6080042A (en) * 1997-10-31 2000-06-27 Virginia Semiconductor, Inc. Flatness and throughput of single side polishing of wafers
KR100567982B1 (ko) 1997-12-08 2006-04-05 가부시키가이샤 에바라 세이사꾸쇼 연마액 공급장치
EP0967499A4 (en) * 1997-12-16 2005-01-05 Furukawa Electric Co Ltd OPTICAL PARTS AND METHOD AND DEVICE FOR POLISHING THEIR END SURFACE
US6083085A (en) 1997-12-22 2000-07-04 Micron Technology, Inc. Method and apparatus for planarizing microelectronic substrates and conditioning planarizing media
US6531397B1 (en) 1998-01-09 2003-03-11 Lsi Logic Corporation Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing
US6024829A (en) * 1998-05-21 2000-02-15 Lucent Technologies Inc. Method of reducing agglomerate particles in a polishing slurry
US6060370A (en) 1998-06-16 2000-05-09 Lsi Logic Corporation Method for shallow trench isolations with chemical-mechanical polishing
US6268224B1 (en) 1998-06-30 2001-07-31 Lsi Logic Corporation Method and apparatus for detecting an ion-implanted polishing endpoint layer within a semiconductor wafer
US6241847B1 (en) 1998-06-30 2001-06-05 Lsi Logic Corporation Method and apparatus for detecting a polishing endpoint based upon infrared signals
US6077783A (en) * 1998-06-30 2000-06-20 Lsi Logic Corporation Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer
US6071818A (en) * 1998-06-30 2000-06-06 Lsi Logic Corporation Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material
US6285035B1 (en) 1998-07-08 2001-09-04 Lsi Logic Corporation Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method
US6074517A (en) * 1998-07-08 2000-06-13 Lsi Logic Corporation Method and apparatus for detecting an endpoint polishing layer by transmitting infrared light signals through a semiconductor wafer
US6066266A (en) * 1998-07-08 2000-05-23 Lsi Logic Corporation In-situ chemical-mechanical polishing slurry formulation for compensation of polish pad degradation
US6080670A (en) * 1998-08-10 2000-06-27 Lsi Logic Corporation Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie
US6124207A (en) * 1998-08-31 2000-09-26 Micron Technology, Inc. Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries
US6201253B1 (en) 1998-10-22 2001-03-13 Lsi Logic Corporation Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system
US6121147A (en) * 1998-12-11 2000-09-19 Lsi Logic Corporation Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance
US6117779A (en) * 1998-12-15 2000-09-12 Lsi Logic Corporation Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint
US6528389B1 (en) 1998-12-17 2003-03-04 Lsi Logic Corporation Substrate planarization with a chemical mechanical polishing stop layer
US6135863A (en) * 1999-04-20 2000-10-24 Memc Electronic Materials, Inc. Method of conditioning wafer polishing pads
US6451699B1 (en) 1999-07-30 2002-09-17 Lsi Logic Corporation Method and apparatus for planarizing a wafer surface of a semiconductor wafer having an elevated portion extending therefrom
US6383934B1 (en) 1999-09-02 2002-05-07 Micron Technology, Inc. Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids
US6306768B1 (en) 1999-11-17 2001-10-23 Micron Technology, Inc. Method for planarizing microelectronic substrates having apertures
US6705930B2 (en) 2000-01-28 2004-03-16 Lam Research Corporation System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques
US6340326B1 (en) 2000-01-28 2002-01-22 Lam Research Corporation System and method for controlled polishing and planarization of semiconductor wafers
US6264532B1 (en) * 2000-03-28 2001-07-24 Speedfam-Ipec Corporation Ultrasonic methods and apparatus for the in-situ detection of workpiece loss
US7751609B1 (en) 2000-04-20 2010-07-06 Lsi Logic Corporation Determination of film thickness during chemical mechanical polishing
US6313038B1 (en) 2000-04-26 2001-11-06 Micron Technology, Inc. Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates
US6387289B1 (en) 2000-05-04 2002-05-14 Micron Technology, Inc. Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6375550B1 (en) 2000-06-05 2002-04-23 Lsi Logic Corporation Method and apparatus for enhancing uniformity during polishing of a semiconductor wafer
US6612901B1 (en) * 2000-06-07 2003-09-02 Micron Technology, Inc. Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6464566B1 (en) 2000-06-29 2002-10-15 Lsi Logic Corporation Apparatus and method for linearly planarizing a surface of a semiconductor wafer
US6541383B1 (en) 2000-06-29 2003-04-01 Lsi Logic Corporation Apparatus and method for planarizing the surface of a semiconductor wafer
US6439981B1 (en) * 2000-12-28 2002-08-27 Lsi Logic Corporation Arrangement and method for polishing a surface of a semiconductor wafer
US6875091B2 (en) * 2001-01-04 2005-04-05 Lam Research Corporation Method and apparatus for conditioning a polishing pad with sonic energy
US6554688B2 (en) 2001-01-04 2003-04-29 Lam Research Corporation Method and apparatus for conditioning a polishing pad with sonic energy
US6372524B1 (en) 2001-03-06 2002-04-16 Lsi Logic Corporation Method for CMP endpoint detection
US6503828B1 (en) 2001-06-14 2003-01-07 Lsi Logic Corporation Process for selective polishing of metal-filled trenches of integrated circuit structures
US6866566B2 (en) * 2001-08-24 2005-03-15 Micron Technology, Inc. Apparatus and method for conditioning a contact surface of a processing pad used in processing microelectronic workpieces
US6722943B2 (en) 2001-08-24 2004-04-20 Micron Technology, Inc. Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US6666749B2 (en) 2001-08-30 2003-12-23 Micron Technology, Inc. Apparatus and method for enhanced processing of microelectronic workpieces
US6964924B1 (en) 2001-09-11 2005-11-15 Lsi Logic Corporation Integrated circuit process monitoring and metrology system
US7131889B1 (en) 2002-03-04 2006-11-07 Micron Technology, Inc. Method for planarizing microelectronic workpieces
US6869335B2 (en) 2002-07-08 2005-03-22 Micron Technology, Inc. Retaining rings, planarizing apparatuses including retaining rings, and methods for planarizing micro-device workpieces
US7341502B2 (en) 2002-07-18 2008-03-11 Micron Technology, Inc. Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
US6860798B2 (en) 2002-08-08 2005-03-01 Micron Technology, Inc. Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces
US7094695B2 (en) 2002-08-21 2006-08-22 Micron Technology, Inc. Apparatus and method for conditioning a polishing pad used for mechanical and/or chemical-mechanical planarization
US7004817B2 (en) 2002-08-23 2006-02-28 Micron Technology, Inc. Carrier assemblies, planarizing apparatuses including carrier assemblies, and methods for planarizing micro-device workpieces
US7011566B2 (en) 2002-08-26 2006-03-14 Micron Technology, Inc. Methods and systems for conditioning planarizing pads used in planarizing substrates
US7008299B2 (en) 2002-08-29 2006-03-07 Micron Technology, Inc. Apparatus and method for mechanical and/or chemical-mechanical planarization of micro-device workpieces
US6841991B2 (en) * 2002-08-29 2005-01-11 Micron Technology, Inc. Planarity diagnostic system, E.G., for microelectronic component test systems
US6803353B2 (en) * 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
US6911393B2 (en) * 2002-12-02 2005-06-28 Arkema Inc. Composition and method for copper chemical mechanical planarization
US7074114B2 (en) 2003-01-16 2006-07-11 Micron Technology, Inc. Carrier assemblies, polishing machines including carrier assemblies, and methods for polishing micro-device workpieces
US6884152B2 (en) 2003-02-11 2005-04-26 Micron Technology, Inc. Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces
US6872132B2 (en) 2003-03-03 2005-03-29 Micron Technology, Inc. Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
WO2004090937A2 (en) * 2003-04-10 2004-10-21 Technion Research & Development Foundation Ltd Copper cmp slurry composition
US7131891B2 (en) 2003-04-28 2006-11-07 Micron Technology, Inc. Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces
US6935929B2 (en) 2003-04-28 2005-08-30 Micron Technology, Inc. Polishing machines including under-pads and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces
US7030603B2 (en) 2003-08-21 2006-04-18 Micron Technology, Inc. Apparatuses and methods for monitoring rotation of a conductive microfeature workpiece
US7086927B2 (en) 2004-03-09 2006-08-08 Micron Technology, Inc. Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
US7066792B2 (en) 2004-08-06 2006-06-27 Micron Technology, Inc. Shaped polishing pads for beveling microfeature workpiece edges, and associate system and methods
US7033253B2 (en) 2004-08-12 2006-04-25 Micron Technology, Inc. Polishing pad conditioners having abrasives and brush elements, and associated systems and methods
US7264539B2 (en) 2005-07-13 2007-09-04 Micron Technology, Inc. Systems and methods for removing microfeature workpiece surface defects
KR100727484B1 (ko) * 2005-07-28 2007-06-13 삼성전자주식회사 화학기계적 연마 장치 및 패드 컨디셔닝 방법
US7326105B2 (en) 2005-08-31 2008-02-05 Micron Technology, Inc. Retaining rings, and associated planarizing apparatuses, and related methods for planarizing micro-device workpieces
US7438626B2 (en) * 2005-08-31 2008-10-21 Micron Technology, Inc. Apparatus and method for removing material from microfeature workpieces
US7294049B2 (en) 2005-09-01 2007-11-13 Micron Technology, Inc. Method and apparatus for removing material from microfeature workpieces
US7749050B2 (en) * 2006-02-06 2010-07-06 Chien-Min Sung Pad conditioner dresser
US8142261B1 (en) * 2006-11-27 2012-03-27 Chien-Min Sung Methods for enhancing chemical mechanical polishing pad processes
US7658187B2 (en) * 2007-01-16 2010-02-09 John Budiac Adjustable stone cutting guide system
US7754612B2 (en) 2007-03-14 2010-07-13 Micron Technology, Inc. Methods and apparatuses for removing polysilicon from semiconductor workpieces
US20090127231A1 (en) * 2007-11-08 2009-05-21 Chien-Min Sung Methods of Forming Superhard Cutters and Superhard Cutters Formed Thereby
TW201130029A (en) * 2009-12-31 2011-09-01 jian-min Song Methods and devices for enhancing chemical mechanical polishing processes
US9144880B2 (en) * 2012-11-01 2015-09-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad
JP6027454B2 (ja) * 2013-02-05 2016-11-16 株式会社荏原製作所 研磨装置
US9233451B2 (en) * 2013-05-31 2016-01-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad stack
US9238296B2 (en) * 2013-05-31 2016-01-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer
US9102034B2 (en) * 2013-08-30 2015-08-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
DE112015002319B4 (de) 2014-12-31 2024-07-25 Osaka University Planarisierungsbearbeitungsverfahren und Planarisierungsbearbeitungsvorrichtung
JP6187948B1 (ja) 2016-03-11 2017-08-30 東邦エンジニアリング株式会社 平坦加工装置、その動作方法および加工物の製造方法
CN107363649A (zh) * 2017-08-08 2017-11-21 北京交通大学 一种电致伸缩超声振动抛光装置
CN114310627A (zh) * 2021-12-30 2022-04-12 西安奕斯伟材料科技有限公司 一种用于对硅片进行抛光的抛光垫和抛光设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2967381A (en) * 1958-04-07 1961-01-10 Bendix Corp Means for cutting
US3093937A (en) * 1962-11-30 1963-06-18 Cavitron Ultrasonics Inc Ultrasonic lapping machines
US3841031A (en) * 1970-10-21 1974-10-15 Monsanto Co Process for polishing thin elements
US4258508A (en) * 1979-09-04 1981-03-31 Rca Corporation Free hold down of wafers for material removal
US4519168A (en) * 1979-09-18 1985-05-28 Speedfam Corporation Liquid waxless fixturing of microsize wafers
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4671851A (en) * 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
JPH0722876B2 (ja) * 1987-06-24 1995-03-15 新技術事業団 研削用ワークテーブル装置
US4910155A (en) * 1988-10-28 1990-03-20 International Business Machines Corporation Wafer flood polishing
US5036015A (en) * 1990-09-24 1991-07-30 Micron Technology, Inc. Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5783497A (en) * 1994-08-02 1998-07-21 Sematech, Inc. Forced-flow wafer polisher
DE19928950A1 (de) * 1999-06-24 2000-12-07 Wacker Siltronic Halbleitermat Verfahren zum Schleifen der Oberfläche eines Werkstücks
DE10060696A1 (de) * 2000-12-07 2002-06-27 Wacker Chemie Gmbh Vorrichtung und Verfahren zum ultraschallunterstützten Schleifen einer Werkstückkante
CN102962756A (zh) * 2012-12-12 2013-03-13 天津中环领先材料技术有限公司 一种可获得高抛光速率的单晶硅晶圆片抛光工艺
CN113118966A (zh) * 2019-12-31 2021-07-16 清华大学 一种用于化学机械抛光的承载头及其使用方法
CN113118966B (zh) * 2019-12-31 2022-08-16 清华大学 一种用于化学机械抛光的承载头及其使用方法

Also Published As

Publication number Publication date
US5245790A (en) 1993-09-21
JPH0621029A (ja) 1994-01-28

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