JPH0590327A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPH0590327A
JPH0590327A JP3248684A JP24868491A JPH0590327A JP H0590327 A JPH0590327 A JP H0590327A JP 3248684 A JP3248684 A JP 3248684A JP 24868491 A JP24868491 A JP 24868491A JP H0590327 A JPH0590327 A JP H0590327A
Authority
JP
Japan
Prior art keywords
bonding
bonding wire
bonding pad
semiconductor integrated
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3248684A
Other languages
English (en)
Inventor
Akitoshi Kato
秋敏 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC IC Microcomputer Systems Co Ltd
Original Assignee
NEC IC Microcomputer Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC IC Microcomputer Systems Co Ltd filed Critical NEC IC Microcomputer Systems Co Ltd
Priority to JP3248684A priority Critical patent/JPH0590327A/ja
Publication of JPH0590327A publication Critical patent/JPH0590327A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05073—Single internal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H01L2224/05557—Shape in side view comprising protrusions or indentations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
    • H01L2224/48453—Shape of the interface with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】 【目的】ボンディング・パッドとボンディング・ワイヤ
ーが密着する面積を大きくする。 【構成】シリコン基板１上のシリコン酸化膜２を介し
て、断面形状が凹状のボンディング・パッド４を形成す
る。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は半導体集積回路に関し、
特にボンディング・パッドの形状に関する。
【０００２】
【従来の技術】従来、半導体集積回路のボンディング・
パッドは、図２に示す様に、半導体基板１上に絶縁膜２
を形成し、その上に均一な厚みの金属でボンディング・
パッド４Ａを形成し、次にボンディング・ワイヤー５と
密着する部分を除いてパッシベーション膜３で覆った構
造となっていた。
【０００３】
【発明が解決しようとする課題】近年のダイナミック・
ランダム・アクセス・メモリーの大容量化に伴ない半導
体集積回路の素子加工寸法が微細化している。そのた
め、ボンディング・パッドの寸法が小さくなり、ボンデ
ィング・ワイヤーは細くなるので、ボンディング・パッ
ドとボンディング・ワイヤーが密着する面積が小さくな
ってきている。このため水分がボンディング・パッドの
表面に入り、ボンディングパッドを腐食させるため、ボ
ンディング・ワイヤーがはがれ接続不良を起こすという
欠点があった。
【０００４】本発明の目的は、上記のような問題点を解
消した半導体集積回路を提供することにある。
【０００５】
【課題を解決するための手段】本発明の半導体集積回路
は、半導体基板上に形成された複数のボンディング・パ
ッドを有する半導体集積回路において、前記ボンディン
グ・パッドは断面が凹状に形成されているものである。
【０００６】
【実施例】次に、本発明の実施例について図面を参照し
て説明する。図１は本発明の一実施例の断面図である。
【０００７】図１において、シリコン基板１上にはシリ
コン酸化膜２を介してアルミ等からなる凹状のボンディ
ング・パッド４が形成されている。そして、ボンディン
グ・パッド４とボンディング・ワイヤー５とが密着する
部分を除いて窒化膜等からなるパッシベーション膜３が
形成されている。
【０００８】このように構成された本実施例によれば、
ボンディング・パッド４の断面形状が凹状となっている
ため、ボンディング・ワイヤー５との接触面積が大きく
なる。従って水分によりボンディング・パッド４に腐食
が生じても、ボンディング・ワイヤー５のはがれは抑制
される。
【０００９】
【発明の効果】以上説明したように本発明は、ボンディ
ング・パッドの断面形状を凹状に形成することにより、
ボンディング・ワイヤーと密着する面積が大となるた
め、水分がボンディング・ワイヤーの底面まで入りにく
くなる。このためボンディング・ワイヤーのはがれが抑
制されるという効果がある。
【図面の簡単な説明】
【図１】本発明の一実施例の断面図。
【図２】従来の半導体集積回路の一例の断面図。
【符号の説明】
１ シリコン基板 ２ シリコン酸化膜 ３ パッシベーション膜 ４，４Ａ ボンディング・パッド ５ ボンディング・ワイヤー

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】 半導体基板上に形成された複数のボンデ
    ィング・パッドを有する半導体集積回路において、前記
    ボンディング・パッドは断面が凹状に形成されているこ
    とを特徴とする半導体集積回路。
JP3248684A 1991-09-27 1991-09-27 半導体集積回路 Pending JPH0590327A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3248684A JPH0590327A (ja) 1991-09-27 1991-09-27 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3248684A JPH0590327A (ja) 1991-09-27 1991-09-27 半導体集積回路

Publications (1)

Publication Number Publication Date
JPH0590327A true JPH0590327A (ja) 1993-04-09

Family

ID=17181798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3248684A Pending JPH0590327A (ja) 1991-09-27 1991-09-27 半導体集積回路

Country Status (1)

Country Link
JP (1) JPH0590327A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100604556B1 (ko) * 2004-10-13 2006-07-28 동부일렉트로닉스 주식회사 반도체 소자의 본딩패드 형성 방법
US7754597B2 (en) 2005-07-27 2010-07-13 Seiko Epson Corporation Bonding pad fabrication method, method for fabricating a bonding pad and an electronic device, and electronic device
JP2016025107A (ja) * 2014-07-16 2016-02-08 ルネサスエレクトロニクス株式会社 半導体装置、および半導体装置の製造方法
CN108346618A (zh) * 2017-01-25 2018-07-31 中芯国际集成电路制造(上海)有限公司 半导体器件及其制作方法、电子装置
CN108447794A (zh) * 2017-01-24 2018-08-24 丰田自动车株式会社 半导体装置及其制造方法
CN113161319A (zh) * 2021-04-23 2021-07-23 长鑫存储技术有限公司 半导体结构及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728344A (en) * 1980-07-29 1982-02-16 Nec Corp Semiconductor device
JPS6484724A (en) * 1987-09-28 1989-03-30 Nec Corp Semiconductor device
JPH03278551A (ja) * 1990-03-28 1991-12-10 Nec Corp 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728344A (en) * 1980-07-29 1982-02-16 Nec Corp Semiconductor device
JPS6484724A (en) * 1987-09-28 1989-03-30 Nec Corp Semiconductor device
JPH03278551A (ja) * 1990-03-28 1991-12-10 Nec Corp 半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100604556B1 (ko) * 2004-10-13 2006-07-28 동부일렉트로닉스 주식회사 반도체 소자의 본딩패드 형성 방법
US7754597B2 (en) 2005-07-27 2010-07-13 Seiko Epson Corporation Bonding pad fabrication method, method for fabricating a bonding pad and an electronic device, and electronic device
JP2016025107A (ja) * 2014-07-16 2016-02-08 ルネサスエレクトロニクス株式会社 半導体装置、および半導体装置の製造方法
CN108447794A (zh) * 2017-01-24 2018-08-24 丰田自动车株式会社 半导体装置及其制造方法
CN108346618A (zh) * 2017-01-25 2018-07-31 中芯国际集成电路制造(上海)有限公司 半导体器件及其制作方法、电子装置
CN108346618B (zh) * 2017-01-25 2021-09-21 中芯国际集成电路制造(上海)有限公司 半导体器件及其制作方法、电子装置
CN113161319A (zh) * 2021-04-23 2021-07-23 长鑫存储技术有限公司 半导体结构及其制作方法
CN113161319B (zh) * 2021-04-23 2022-03-22 长鑫存储技术有限公司 半导体结构及其制作方法

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