JPH0587142B2 - - Google Patents
Info
- Publication number
- JPH0587142B2 JPH0587142B2 JP25898086A JP25898086A JPH0587142B2 JP H0587142 B2 JPH0587142 B2 JP H0587142B2 JP 25898086 A JP25898086 A JP 25898086A JP 25898086 A JP25898086 A JP 25898086A JP H0587142 B2 JPH0587142 B2 JP H0587142B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- trench
- semiconductor substrate
- oxide film
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 41
- 238000002955 isolation Methods 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 27
- 230000003647 oxidation Effects 0.000 claims description 24
- 238000007254 oxidation reaction Methods 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 238000000059 patterning Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25898086A JPS63132446A (ja) | 1986-10-30 | 1986-10-30 | 半導体製造方法 |
| DE19873736531 DE3736531A1 (de) | 1986-10-30 | 1987-10-28 | Verfahren zur herstellung einer halbleitereinrichtung |
| US07/113,744 US4772569A (en) | 1986-10-30 | 1987-10-28 | Method for forming oxide isolation films on french sidewalls |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25898086A JPS63132446A (ja) | 1986-10-30 | 1986-10-30 | 半導体製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63132446A JPS63132446A (ja) | 1988-06-04 |
| JPH0587142B2 true JPH0587142B2 (de) | 1993-12-15 |
Family
ID=17327685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25898086A Granted JPS63132446A (ja) | 1986-10-30 | 1986-10-30 | 半導体製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63132446A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070018286A1 (en) * | 2005-07-14 | 2007-01-25 | Asml Netherlands B.V. | Substrate, lithographic multiple exposure method, machine readable medium |
-
1986
- 1986-10-30 JP JP25898086A patent/JPS63132446A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63132446A (ja) | 1988-06-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |