JPH0566747B2 - - Google Patents

Info

Publication number
JPH0566747B2
JPH0566747B2 JP60189838A JP18983885A JPH0566747B2 JP H0566747 B2 JPH0566747 B2 JP H0566747B2 JP 60189838 A JP60189838 A JP 60189838A JP 18983885 A JP18983885 A JP 18983885A JP H0566747 B2 JPH0566747 B2 JP H0566747B2
Authority
JP
Japan
Prior art keywords
gas
film
silicon
silicon nitride
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60189838A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6251264A (ja
Inventor
Eiji Matsuzaki
Yoshifumi Yoritomi
Akihiro Kenmochi
Takao Takano
Kazuo Sunahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60189838A priority Critical patent/JPS6251264A/ja
Publication of JPS6251264A publication Critical patent/JPS6251264A/ja
Publication of JPH0566747B2 publication Critical patent/JPH0566747B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
JP60189838A 1985-08-30 1985-08-30 薄膜トランジスタの製造方法 Granted JPS6251264A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60189838A JPS6251264A (ja) 1985-08-30 1985-08-30 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60189838A JPS6251264A (ja) 1985-08-30 1985-08-30 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6251264A JPS6251264A (ja) 1987-03-05
JPH0566747B2 true JPH0566747B2 (enrdf_load_stackoverflow) 1993-09-22

Family

ID=16248051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60189838A Granted JPS6251264A (ja) 1985-08-30 1985-08-30 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6251264A (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0640550B2 (ja) * 1987-06-09 1994-05-25 沖電気工業株式会社 薄膜トランジスタの製造方法
CA2100065A1 (en) * 1991-01-30 1992-07-31 Nang Tri Tran Polysilicon thin film transistor
US5254480A (en) 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
JP2752582B2 (ja) * 1994-05-20 1998-05-18 株式会社フロンテック 電子素子及びその製造方法
JP4856297B2 (ja) * 1997-12-02 2012-01-18 公益財団法人国際科学振興財団 半導体装置の製造方法
KR100344777B1 (ko) * 2000-02-28 2002-07-20 엘지.필립스 엘시디 주식회사 박막트랜지스터를 포함하는 소자 제조방법
KR100760078B1 (ko) * 2000-03-13 2007-09-18 다다히로 오미 산화막의 형성 방법, 질화막의 형성 방법, 산질화막의 형성 방법, 산화막의 스퍼터링 방법, 질화막의 스퍼터링 방법, 산질화막의 스퍼터링 방법, 게이트 절연막의 형성 방법
JP3501793B2 (ja) * 2001-05-16 2004-03-02 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタ及びその製造方法
US7972663B2 (en) 2002-12-20 2011-07-05 Applied Materials, Inc. Method and apparatus for forming a high quality low temperature silicon nitride layer
US7172792B2 (en) 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
US7365029B2 (en) 2002-12-20 2008-04-29 Applied Materials, Inc. Method for silicon nitride chemical vapor deposition
KR101022949B1 (ko) * 2002-12-20 2011-03-16 어플라이드 머티어리얼스, 인코포레이티드 고품질 저온 실리콘질화물층 형성 방법 및 장치
JP5477303B2 (ja) * 2011-01-12 2014-04-23 信越化学工業株式会社 太陽電池の製造方法
JP6733516B2 (ja) * 2016-11-21 2020-08-05 東京エレクトロン株式会社 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60241269A (ja) * 1984-05-16 1985-11-30 Seiko Epson Corp 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JPS6251264A (ja) 1987-03-05

Similar Documents

Publication Publication Date Title
JP3277548B2 (ja) ディスプレイ基板
JPH0566747B2 (enrdf_load_stackoverflow)
EP0051940B1 (en) Annealing process for a thin-film semiconductor device and obtained devices
KR100272260B1 (ko) 유사다이아몬드를 이용한 박막트랜지스터 및 그의 제조방법
JPS59141271A (ja) 薄膜トランジスタ
JP3348531B2 (ja) 薄膜トランジスタの水素化方法および薄膜トランジスタの形成方法
JPH08242005A (ja) 非晶質シリコン薄膜トランジスタ及びその製造方法
JPS6165477A (ja) 半導体装置
JPH01309378A (ja) 薄膜半導体素子
US6518108B2 (en) Electronic device and a method for making the same
JPH0564862B2 (enrdf_load_stackoverflow)
JPH01268060A (ja) 薄膜トランジスタ
JPS62219574A (ja) 半導体装置
JP2740275B2 (ja) 薄膜トランジスタ
JPS59189676A (ja) 半導体装置
JPH0554271B2 (enrdf_load_stackoverflow)
JPH10177968A (ja) 薄膜素子、薄膜素子の形成方法、薄膜トランジスタの製造方法及び液晶表示装置の製造方法
Murthy et al. Effect of NH3/SiH4 gas ratios of top nitride layer on stability and leakage in a-Si: H thin film transistors
JPS5919378A (ja) 絶縁ゲート型トランジスタの製造方法
JPS58148458A (ja) 薄膜トランジスタ
JPH0996836A (ja) 液晶表示装置
JPH07321106A (ja) 酸化シリコン薄膜の改質方法および薄膜トランジスタの製造方法
JPS62105474A (ja) 薄膜トランジスタ
JPH0348670B2 (enrdf_load_stackoverflow)
JPH02150067A (ja) 薄膜半導体装置