JPH0564862B2 - - Google Patents

Info

Publication number
JPH0564862B2
JPH0564862B2 JP60061245A JP6124585A JPH0564862B2 JP H0564862 B2 JPH0564862 B2 JP H0564862B2 JP 60061245 A JP60061245 A JP 60061245A JP 6124585 A JP6124585 A JP 6124585A JP H0564862 B2 JPH0564862 B2 JP H0564862B2
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
amorphous
microcrystalline semiconductor
band width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60061245A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61220369A (ja
Inventor
Isao Sakata
Yutaka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60061245A priority Critical patent/JPS61220369A/ja
Publication of JPS61220369A publication Critical patent/JPS61220369A/ja
Publication of JPH0564862B2 publication Critical patent/JPH0564862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)
JP60061245A 1985-03-26 1985-03-26 薄膜電界効果素子 Granted JPS61220369A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60061245A JPS61220369A (ja) 1985-03-26 1985-03-26 薄膜電界効果素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60061245A JPS61220369A (ja) 1985-03-26 1985-03-26 薄膜電界効果素子

Publications (2)

Publication Number Publication Date
JPS61220369A JPS61220369A (ja) 1986-09-30
JPH0564862B2 true JPH0564862B2 (enrdf_load_stackoverflow) 1993-09-16

Family

ID=13165652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60061245A Granted JPS61220369A (ja) 1985-03-26 1985-03-26 薄膜電界効果素子

Country Status (1)

Country Link
JP (1) JPS61220369A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032883A (en) * 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
US5327001A (en) * 1987-09-09 1994-07-05 Casio Computer Co., Ltd. Thin film transistor array having single light shield layer over transistors and gate and drain lines
US5229644A (en) * 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
US5166085A (en) * 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor
JPH01217421A (ja) * 1988-02-26 1989-08-31 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタアレイ基板およびその製造方法
JP2839529B2 (ja) * 1989-02-17 1998-12-16 株式会社東芝 薄膜トランジスタ
US5221631A (en) * 1989-02-17 1993-06-22 International Business Machines Corporation Method of fabricating a thin film transistor having a silicon carbide buffer layer

Also Published As

Publication number Publication date
JPS61220369A (ja) 1986-09-30

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term